IXFP36N30P3

IXFA36N30P3 IXFP36N30P3 Polar3 TM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 300V = 36A  110m  TO-263AA (IXFA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M 300 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 36 A IDM TC = 25C, Pulse Width Limited by TJM 70 A IA TC = 25C 18 A EAS TC = 25C 1 J dv/dt IS  IDM, VDD  VDSS, TJ  150C 10 V/ns PD TC = 25C 347 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 2.5 3.0 g g TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-220) Weight TO-263 TO-220 D (Tab) TO-220 (IXFP) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features      International Standard Packages Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 300 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2018 IXYS CORPORATION, All Rights Reserved  High Power Density Easy to Mount Space Savings V Applications V  100 nA  4.5 10 A 400 μA    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls 110 m DS100579B(6/18) IXFA36N30P3 IXFP36N30P3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 17 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 28 S 2.1  2040 pF 355 pF 6 pF 16 ns 39 ns 36 ns 14 ns 30 nC 10 nC 8 nC 1. Gate 2. Drain 3. Source 4. Drain 0.36 C/W RthJC RthCS TO-263 Outline TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Characteristic Values Min. Typ. Max 36 A Repetitive, Pulse Width Limited by TJM 144 A IF = IS, VGS = 0V, Note 1 1.4 V 125 1.0 17 IF = 18A, -di/dt = 200A/μs VR = 100V ns μC A TO-220 Outline E A A1 oP H1 Q D2 D D1 E1 A2 EJECTOR L1 L e 3X b c e1 3X b2 1 - Gate 2,4 - Drain 3 - Source Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA36N30P3 IXFP36N30P3 Fig. 1. Output Characteristics @ TJ = 25oC o Fig. 2. Extended Output Characteristics @ TJ = 25 C 80 36 VGS = 10V 8V 32 VGS = 10V 70 28 I D - Amperes I D - Amperes 8V 60 7V 24 20 16 50 40 7V 30 12 20 6V 8 6V 10 4 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 4.5 5 10 15 36 3.2 VGS = 10V 8V 30 VGS = 10V 2.8 RDS(on) - Normalized 7V 28 24 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 18A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 32 20 VDS - Volts VDS - Volts 20 6V 16 12 2.4 I D = 36A 2.0 I D = 18A 1.6 1.2 8 4 0.8 5V 0 0.4 0 1 2 3 4 5 6 7 8 9 -50 10 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 18A Value vs. Drain Current 4.6 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 40 VGS = 10V 4.2 25 TJ - Degrees Centigrade 35 3.8 o TJ = 125 C 3.0 I D - Amperes R DS(on) - Normalized 30 3.4 2.6 2.2 1.8 o 20 15 10 TJ = 25 C 1.4 25 5 1.0 0 0.6 0 10 20 30 40 50 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 60 70 80 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFA36N30P3 IXFP36N30P3 Fig. 8. Transconductance Fig. 7. Input Admittance 50 70 o TJ = - 40 C 45 60 40 35 g f s - Siemens I D - Amperes 50 40 30 o TJ = 125 C 20 o 25 C 30 o 125 C 25 20 15 o 25 C o - 40 C 10 10 5 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 10 20 30 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 50 60 70 Fig. 10. Gate Charge 120 10 VDS = 300V 9 100 I D = 18A 8 I G = 10mA 7 VGS - Volts 80 I S - Amperes 40 I D - Amperes 60 40 o TJ = 125 C 6 5 4 3 o TJ = 25 C 20 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 4 8 VSD - Volts Fig. 11. Capacitance 16 20 24 28 32 Fig. 12. Forward-Bias Safe Operating Area 10,000 100 RDS(on) Limit f = 1 MHz C iss 100μs 1,000 10 I D - Amperes Capacitance - PicoFarads 12 QG - NanoCoulombs C oss 100 10 1ms 1 Crss o TJ = 150 C o TC = 25 C Single Pulse 1 DC 10ms 100ms 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFA36N30P3 IXFP36N30P3 Fig. 13. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_36N30P3 (W5) 9-09-14 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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