IXFP38N30X3

IXFA38N30X3 IXFP38N30X3 X3-Class HiPERFETTM Power MOSFET VDSS ID25 RDS(on) = 300V = 38A  50m  D N-Channel Enhancement Mode Avalanche Rated G TO-263 (IXFA) S G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M 300 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 38 A IDM TC = 25C, Pulse Width Limited by TJM 60 A IA TC = 25C 19 A EAS TC = 25C 400 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 240 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-263 TO-220 TO-220 (IXFP) G D S G = Gate S = Source     BVDSS VGS = 0V, ID = 1mA 300 VGS(th) VDS = VGS, ID = 1mA 2.5  IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1  V  100 nA 25 A 500 A TJ = 125C © 2019 IXYS CORPORATION, All Rights Reserved 34 High Power Density Easy to Mount Space Savings Applications V 4.5 International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages  Characteristic Values Min. Typ. Max. D = Drain Tab = Drain Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D (Tab)    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 50 m DS100873C(11/19) IXFA38N30X3 IXFP38N30X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 20 Ciss Coss 34 S 1.9  2240 pF 330 pF 1.3 pF 130 520 pF pF 19 ns 23 ns 60 ns 14 ns 35 nC 10 nC 11 nC VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.52 C/W RthJC RthCS TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 38 A Repetitive, Pulse Width Limited by TJM 152 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 19A, -di/dt = 100A/μs 90 330 7.4 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA38N30X3 IXFP38N30X3 o o Fig. 1. Output Characteristics @ TJ = 25 C Fig. 2. Extended Output Characteristics @ TJ = 25 C 120 40 VGS = 10V 9V VGS = 10V 8V 35 100 7V 8V 80 25 20 I D - Amperes I D - Amperes 30 6V 15 7V 60 40 6V 10 5 20 5V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 5 10 15 VDS - Volts 30 35 Fig. 4. RDS(on) Normalized to ID = 19A Value vs. Junction Temperature o 3.0 40 VGS = 10V 8V RDS(on) - Normalized 25 6V 20 15 5V 10 VGS = 10V 2.6 7V 30 I D - Amperes 25 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125 C 35 20 2.2 I D = 38A 1.8 I D = 19A 1.4 1.0 0.6 5 4V 0.2 0 0 4.5 0.5 1 1.5 2 3 3.5 -50 4 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 19A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 3.5 BVDSS / VGS(th) - Normalized 4.0 RDS(on) - Normalized 2.5 o TJ = 125 C 3.0 2.5 o 2.0 TJ = 25 C 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 10 20 30 40 50 60 70 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 80 90 100 110 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFA38N30X3 IXFP38N30X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 45 60 40 VDS = 10V 50 35 40 I D - Amperes I D - Amperes 30 25 20 15 30 o TJ = 125 C o 20 25 C o - 40 C 10 10 5 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 TC - Degrees Centigrade Fig. 9. Transconductance 6.5 7.0 TJ = - 40 C VDS = 10V 120 50 100 o 25 C I S - Amperes g f s - Siemens 6.0 140 o 40 o 125 C 30 80 60 o TJ = 125 C 20 40 10 20 o 0 TJ = 25 C 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 VSD - Volts I D - Amperes Fig. 12. Capacitance Fig. 11. Gate Charge 10 10000 VDS = 150V 8 I D = 19A Ciss Capacitance - PicoFarads 9 I G = 10mA 7 VGS - Volts 5.5 Fig. 10. Forward Voltage Drop of Intrinsic Diode 70 60 5.0 VGS - Volts 6 5 4 3 2 1000 100 Coss 10 Crss 1 f = 1 MHz 0 1 0 5 10 15 20 25 30 35 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFA38N30X3 IXFP38N30X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 100 6 RDS(on) Limit 25μs 5 4 I D - Amperes EOSS - MicroJoules 10 3 100μs 1 2 1ms o 0.1 TJ = 150 C 10ms o TC = 25 C Single Pulse 1 0 DC 0.01 0 50 100 150 200 250 300 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance Z(th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: F_38N30X3(23G-S301) 12-15-17 IXFA38N30X3 IXFP38N30X3 TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFA38N30X3 IXFP38N30X3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2019 IXYS CORPORATION, All Rights Reserved