IXFP4N85X

IXFY4N85X IXFA4N85X IXFP4N85X X-Class HiPERFET Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode = 850V = 3.5A  2.5  D TO-252 (IXFY) G G S S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 850 V VDGR TJ = 25C to 150C, RGS = 1M 850 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 3.5 A IDM TC = 25C, Pulse Width Limited by TJM 10.0 A IA TC = 25C 2 A EAS TC = 25C 125 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 150 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 0.35 2.50 3.00 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 TO-263 (IXFA) G S D (Tab) TO-220 (IXFP) G D S G = Gate S = Source Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 850 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V      VGS = 10V, ID = 2A, Notes 1& 2 © 2019 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings V 5.5 V 5 A 500 A Applications     RDS(on) International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages  100 nA TJ = 125C D = Drain Tab = Drain Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D (Tab) 2.5   Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100768B(11/19) IXFY4N85X Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 2A, Note 1 1.2 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss 2.0 S 3  247 pF 305 pF 5 pF 27 60 pF pF 13 ns 27 ns 28 ns 20 ns 7.0 nC 2.3 nC 3.3 nC IXFA4N85X IXFP4N85X Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 2A RG = 30 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 2A Qgd 0.83 C/W RthJC RthCS TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 4 A Repetitive, pulse Width Limited by TJM 16 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 2A, -di/dt = 100A/μs 170 770 9 VR = 100V ns nC A Notes: 1. Pulse test, t  300s, duty cycle, d  2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFY4N85X o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 4.0 6 VGS = 10V VGS = 10V 9V 3.5 5 9V 8V 4 2.5 I D - Amperes I D - Amperes 3.0 2.0 1.5 7V 3 8V 2 1.0 7V 1 0.5 6V 6V 0.0 0 0 1 2 3 4 5 6 7 8 9 10 11 0 4 8 VDS - Volts 4.0 5.0 VGS = 10V 9V 4.5 20 24 28 32 RDS(on) - Normalized 2.5 2.0 7V 1.5 1.0 6V 0.5 VGS = 10V 4.0 8V 3.0 I D - Amperes 16 Fig. 4. RDS(on) Normalized to ID = 2A Value vs. Junction Temperature o 3.5 12 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125 C 3.5 3.0 I D = 4A 2.5 2.0 I D = 2A 1.5 1.0 0.5 5V 0.0 0.0 0 5 10 15 20 25 -50 30 -25 0 VDS - Volts 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 4.0 VGS = 10V 3.5 25 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 2A Value vs. Drain Current 4.0 3.5 3.0 3.0 o TJ = 125 C I D - Amperes RDS(on) - Normalized IXFA4N85X IXFP4N85X 2.5 2.0 2.5 2.0 1.5 o TJ = 25 C 1.5 1.0 1.0 0.5 0.5 0.0 0 1 2 3 4 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 5 6 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFY4N85X Fig. 7. Input Admittance IXFA4N85X IXFP4N85X Fig. 8. Transconductance 3.5 5 o TJ = - 40 C 3.0 4 g f s - Siemens I D - Amperes 2.5 3 o TJ = 125 C o 25 C o - 40 C 2 o 25 C 2.0 o 125 C 1.5 1.0 1 0.5 0 0.0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 0.5 1 1.5 2 VGS - Volts 2.5 3 3.5 4 4.5 5 I D - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 18 VDS = 425V 16 I D = 2A 8 14 I G = 10mA VGS - Volts I S - Amperes 12 10 8 6 4 o TJ = 125 C 6 o TJ = 25 C 4 2 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 1 2 3 4 5 6 7 QG - NanoCoulombs VSD - Volts Fig. 12. Output Capacitance Stored Energy Fig. 11. Capacitance 10 10000 8 1000 Ciss E OSS - MicroJoules Capacitance - PicoFarads 9 100 Coss 10 Crss 1 7 6 5 4 3 2 f = 1 MHz 1 0.1 0 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 100 200 300 400 500 VDS - Volts 600 700 800 900 IXFY4N85X IXFA4N85X IXFP4N85X Fig. 14. Maximum Transient Thermal Impedance Fig. 13. Forward-Bias Safe Operating Area 1 100 RDS(on) Limit 10 100μs 1 0.1 0.1 1ms o TJ = 150 C o TC = 25 C Single Pulse 10ms DC 0.01 10 Z (th)JC - K / W I D - Amperes 25μs 100 VDS - Volts © 2019 IXYS CORPORATION, All Rights Reserved 1,000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS REF: F_4N85X(S2-D901) 12-05-16 IXFY4N85X TO-252 Outline E b3 A c2 L3 1 - Gate 2,4 - Drain 3 - Source 4 D L4 1 A1 A2 3 2 L1 b e1 e H L b2 c L2 0 5.55MIN OPTIONAL E1 6.50MIN D1 4 6.40 2.85MIN BOTTOM VIEW 1.25MIN 2.28 LAND PATTERN RECOMMENDATION TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFA4N85X IXFP4N85X IXFY4N85X IXFA4N85X IXFP4N85X Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2019 IXYS CORPORATION, All Rights Reserved