IXFP4N85XM

Preliminary Technical Information IXFP4N85XM X-Class HiPERFET Power MOSFET VDSS ID25 RDS(on) = 850V = 3.5A  2.5  (Electrically Isolated Tab) N-Channel Enhancement Mode OVERMOLDED TO-220 Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 850 V VDGR TJ = 25C to 150C, RGS = 1M 850 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C, Limited by TJM 3.5 A IDM TC = 25C, Pulse Width Limited by TJM 10.0 A G G = Gate S = Source IA TC = 25C 2 A EAS TC = 25C 125 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 35 W -55 ... +150 C TJM 150 C  Tstg -55 ... +150 C  300 260 °C °C 2500 V~ 1.13 / 10 Nm/lb.in 2.5 g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute Md Mounting Torque Weight VGS = 0V, ID = 250μA 850 VGS(th) VDS = VGS, ID = 250μA 3.0     IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V   RDS(on) VGS = 10V, ID = 2A, Note 1   V 100 nA TJ = 125C © 2018 IXYS CORPORATION, All Rights Reserved International Standard Package Plastic Overmolded Tab Low RDS(ON) and QG 2500V~ Electrical Isolation Avalanche Rated Low Package Inductance Advantages V 5.5 D = Drain High Power Density Easy to Mount Space Savings Applications Characteristic Values Min. Typ. Max. BVDSS Isolated Tab Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) DS    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 5 A 500 A 2.5  DS100782A(10/18) IXFP4N85XM Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 2A, Note 1 1.2 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 2.0 S 3  247 pF 305 pF 5 pF 27 60 pF pF 13 ns 27 ns 28 ns 20 ns 7.0 nC 2.3 nC 3.3 nC Crss OVERMOLDED TO-220 (IXFP...M) 1 2 3 Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 2A RG = 30 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 2A Qgd Terminals: 1 - Gate 2 - Drain 3 - Source 3.57 C/W RthJC RthCS C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 4 A Repetitive, pulse Width Limited by TJM 16 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 2A, -di/dt = 100A/μs 170 770 9 VR = 100V ns nC A Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFP4N85XM o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 4.0 6 VGS = 10V VGS = 10V 9V 3.5 8V 4 2.5 I D - Amperes I D - Amperes 5 9V 3.0 2.0 1.5 3 7V 8V 2 1.0 7V 1 0.5 6V 6V 0.0 0 0 1 2 3 4 5 6 7 8 9 10 11 0 4 8 12 VDS - Volts 4.0 5.0 VGS = 10V 9V 4.5 24 28 32 RDS(on) - Normalized 2.5 2.0 7V 1.5 1.0 6V 0.5 VGS = 10V 4.0 8V 3.0 I D - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 2A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 3.5 16 VDS - Volts 3.5 3.0 I D = 4A 2.5 2.0 I D = 2A 1.5 1.0 0.5 5V 0.0 0.0 0 5 10 15 20 25 -50 30 -25 0 25 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 2A Value vs. Drain Current 4.0 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Input Admittance 5 VGS = 10V 3.5 o TJ = 125 C I D - Amperes RDS(on) - Normalized 4 3.0 2.5 2.0 3 o TJ = 125 C o 25 C o - 40 C 2 o TJ = 25 C 1.5 1 1.0 0 0.5 0 1 2 3 4 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 5 6 4.0 4.5 5.0 5.5 6.0 6.5 VGS - Volts 7.0 7.5 8.0 8.5 9.0 IXFP4N85XM Fig. 7. Transconductance Fig. 8. Forward Voltage Drop of Intrinsic Diode 3.5 18 o TJ = - 40 C 16 3.0 14 o 25 C 12 I S - Amperes g f s - Siemens 2.5 2.0 o 125 C 1.5 10 8 o TJ = 125 C 6 1.0 o 4 0.5 TJ = 25 C 2 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.3 0.4 0.5 0.6 0.7 I D - Amperes 0.8 0.9 1.0 1.1 1.2 1.3 VSD - Volts Fig. 9. Capacitance Fig. 8. Gate Charge 10000 10 VDS = 425V VGS - Volts Capacitance - PicoFarads I D = 2A 8 I G = 10mA 6 4 1000 C iss 100 C oss 10 C rss 1 2 f = 1 MHz 0.1 0 0 1 2 3 4 5 6 1 7 10 100 1000 VDS - Volts QG - NanoCoulombs Fig. 11. Output Capacitance Stored Energy Fig. 12. Forward-Bias Safe Operating Area 100 9 8 100μs 10 100ms 6 I D - Amperes E OSS - MicroJoules 7 5 4 10ms 25μs 1ms DC 1 RDS(on) Limit 3 0.1 2 o TJ = 150 C o TC = 25 C Single Pulse 1 0.01 0 0 100 200 300 400 500 600 700 800 900 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFP4N85XM Fig. 13. Maximum Transient Thermal Impedance 10 Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_4N85X(S2-D901) 1-23-17 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.