IXFP56N30X3M

IXFP56N30X3M X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) D = 300V = 56A  27m  (Electrically Isolated Tab) G N-Channel Enhancement Mode S OVERMOLDED TO-220 Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 300 V VDGR TJ = 25C to 150C, RGS = 1M 300 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C, Limited by TJM 56 A IDM TC = 25C, Pulse Width Limited by TJM 112 A IA TC = 25C 28 A EAS TC = 25C 700 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 36 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 2500 V~ 1.13 / 10 Nm/lb.in 2.5 g TJ G G = Gate S = Source Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute Md Mounting Torque Weight      VGS = 0V, ID = 1mA 300 VGS(th) VDS = VGS, ID = 1.5mA 2.5   IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 28A, Note 1  V  4.5 V 100 nA High Power Density Easy to Mount Space Savings    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 5 A 500 A TJ = 125C © 2019 IXYS CORPORATION, All Rights Reserved International Standard Package Plastic Overmolded Tab Low RDS(ON) and QG Avalanche Rated 2500V~ Electrical Isolation Low Package Inductance Applications Characteristic Values Min. Typ. Max. BVDSS D = Drain Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Isolated Tab Features  TL TSOLD DS 21 27 m DS100885C(11/19) IXFP56N30X3M Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 28A, Note 1 26 RGi Gate Input Resistance Ciss Coss 43 S 2.3  3750 pF 560 pF 3 pF 210 860 pF pF 21 ns 26 ns 64 ns 10 ns 56 nC 18 nC 17 nC VGS = 0V, VDS = 25V, f = 1MHz Crss OVERMOLDED TO-220 (IXFP...M) oP 1 2 3 Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 28A RG =5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 28A Qgd Terminals: 1 - Gate 2 - Drain 3 - Source 3.5 C/W RthJC RthCS 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 56 A Repetitive, Pulse Width Limited by TJM 224 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 28A, -di/dt = 100A/μs 115 580 10 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFP56N30X3M o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 200 60 VGS = 10V 9V 8V 160 9V 140 40 I D - Amperes I D - Amperes 50 VGS = 10V 180 7V 30 20 120 8V 100 80 7V 60 6V 40 10 6V 20 5V 0 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 5 10 15 VDS - Volts 60 3.0 50 I D - Amperes 40 8V 2.6 7V 2.2 RDS(on) - Normalized VGS = 10V 9V 30 6V 20 10 4V 0 1.5 2 2.5 VGS = 10V 1.8 I D = 56A 1.4 I D = 28A 1.0 0.6 5V 1 0.2 3 -50 3.5 -25 0 25 VDS - Volts 100 125 150 BVDSS / VGS(th) - Normalized 1.2 3.5 RDS(on) - Normalized 75 Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 4.0 50 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 28A Value vs. Drain Current 4.5 30 Fig. 4. RDS(on) Normalized to ID = 28A Value vs. Junction Temperature o 0.5 25 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125 C 0 20 o TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 1.1 BVDSS 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 20 40 60 80 100 120 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 140 160 180 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFP56N30X3M Fig. 8. Transconductance Fig. 7. Input Admittance 90 80 o VDS = 10V 70 80 70 g f s - Siemens 60 I D - Amperes TJ = - 40 C VDS = 10V 50 40 o 30 TJ = 125 C o o 60 25 C 50 o 125 C 40 30 25 C 20 20 o - 40 C 10 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 10 20 30 50 60 70 80 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 140 VDS = 150V 9 120 I D = 28A 8 100 I G = 10mA 7 VGS - Volts I S - Amperes 40 I D - Amperes VGS - Volts 80 60 o TJ = 125 C 6 5 4 3 40 o TJ = 25 C 2 20 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 5 10 15 20 25 30 35 40 45 50 55 QG - NanoCoulombs VSD - Volts Fig. 12. Output Capacitance Stored Energy Fig. 11. Capacitance 10 100,000 8 10,000 C iss EOSS - MicroJoules Capacitance - PicoFarads f = 1 MHz 1,000 C oss 100 6 4 Crss 2 10 0 1 1 10 100 1,000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 50 100 150 VDS - Volts 200 250 300 IXFP56N30X3M Fig. 14. Maximum Transient Thermal Impedance Fig. 13. Forward-Bias Safe Operating Area 1000 10 RDS(on) Limit 100 Z (th)JC - K / W I D - Amperes 1 10 100μs 1 1ms o TJ = 150 C 0.1 0.01 10ms o TC = 25 C Single Pulse DC 0.01 1 0.1 10 100 VDS - Volts © 2019 IXYS CORPORATION, All Rights Reserved 1,000 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS REF: F_56N30X3(24-S301) 1-09-18-A IXFP56N30X3M Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.