IXFP5N100PM

Advance Technical Information VDSS ID25 IXFP5N100PM PolarTM HiPerFETTM Power MOSFET RDS(on) (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.3A Ω ≤ 2.8Ω OVERMOLDED (IXFP...M) OUTLINE Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 2.3 A IDM TC = 25°C, Pulse Width Limited by TJM 10 A G G = Gate S = Source IA TC = 25°C 5 A EAS TC = 25°C 300 mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 42 W -55 ... +150 °C TJM 150 °C z Tstg -55 ... +150 °C z 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 g TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque Weight DS Isolated Tab D = Drain Features z z z Plastic overmolded Tab for Electrical Isolation Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages z z z High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA 1000 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V z V 6.0 V ±100 nA z z z Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls 10 μA TJ = 125°C RDS(on) z Characteristic Values Min. Typ. Max. VGS = 10V, ID = 2.5A, Note 1 © 2013 IXYS CORPORATION, All Rights Reserved. 750 μA 2.8 Ω DS100537(5/13) IXFP5N100PM Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 2.4 VDS = 20V, ID = 2.5A, Note 1 Ciss Coss 4.0 S 1830 pF 113 pF 20 pF 1.6 Ω 12 ns 13 ns 30 ns 37 ns 33.4 nC 10.6 nC 14.4 nC VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 2.5A RG = 5Ω (External) Qg(on) Qgs OVERMOLDED TO-220 FULL PAK VGS = 10V, VDS = 0.5 • VDSS, ID = 2.5A Qgd 3.0 °C/W RthJC 1 2 Terminals: 3 1 - Gate 2 - Drain 3 - Source Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Note: Characteristic Values Min. Typ. Max. 5 A Repetitive, Pulse Width Limited by TJM 20 A IF = IS, VGS = 0V, Note 1 1.3 V 200 ns IF = 5A, -di/dt = 100A/μs VR = 100V, VGS = 0V 7.4 A 0.43 μC 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFP5N100PM Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 5.0 8 VGS = 10V 8V 4.5 VGS = 10V 9V 8V 7 4.0 6 7V ID - Amperes ID - Amperes 3.5 3.0 2.5 2.0 5 7V 4 3 1.5 2 6V 1.0 5V 0.0 0 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = 2.5A Value vs. Junction Temperature 5.0 2.8 VGS = 10V 8V 4.5 VGS = 10V 2.4 3.5 R DS(on) - Normalized 4.0 ID - Amperes 6V 1 0.5 7V 3.0 2.5 2.0 6V 1.5 1.0 I D = 5A 2.0 I D = 2.5A 1.6 1.2 0.8 5V 0.5 0.0 0.4 0 3 6 9 12 15 18 21 24 27 30 -50 -25 0 25 VDS - Volts 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 2.5A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 2.5 VGS = 10V 2.4 TJ = 125ºC 2.0 2.0 ID - Amperes R DS(on) - Normalized 2.2 1.8 1.6 1.5 1.0 1.4 1.2 0.5 TJ = 25ºC 1.0 0.8 0.0 0 1 2 3 4 5 ID - Amperes © 2013 IXYS CORPORATION, All Rights Reserved. 6 7 8 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFP5N100PM Fig. 7. Input Admittance Fig. 8. Transconductance 6 4.5 TJ = - 40ºC 4 25ºC 4 g f s - Siemens ID - Amperes 5 TJ = 125ºC 25ºC - 40ºC 3.5 3 2.5 2 125ºC 3 1.5 2 1 1 0.5 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 0.5 1 1.5 VGS - Volts 2 2.5 3 3.5 4 4.5 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 16 VDS = 500V 9 14 I D = 2.5A 8 I G = 10mA 12 10 VGS - Volts IS - Amperes 7 8 6 6 5 4 TJ = 125ºC 3 TJ = 25ºC 4 2 2 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 4 8 VSD - Volts 12 16 20 24 28 32 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 10 f = 1 MHz 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads Ciss Coss 100 1 0.1 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions. IXYS REF: F_5N100P(55-744)5-07-13-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.