IXFP60N25X3M

IXFP60N25X3M X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated = 250V = 60A  23m  OVERMOLDED TO-220 Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 250 V VDGR TJ = 25C to 150C, RGS = 1M 250 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C, Limited by TJM 60 A IDM TC = 25C, Pulse Width Limited by TJM 210 A G DS G = Gate S = Source IA TC = 25C 30 A EAS TC = 25C 700 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns PD TC = 25C 36 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C  2500 V~ Advantages 1.13 / 10 Nm/lb.in 2.5 g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute Md Mounting Torque Weight Isolated Tab D = Drain Features         International Standard Package Plastic Overmolded Tab Low RDS(ON) and QG Avalanche Rated 2500V~ Electrical Isolation Low Package Inductance High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 250 VGS(th) VDS = VGS, ID = 1.5mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1  V 4.5 V 100 nA 5 500 TJ = 125C © 2019 IXYS CORPORATION, All Rights Reserved 19     Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls A A 23 m DS100824D(8/19) IXFP60N25X3M Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 30 RGi Gate Input Resistance Ciss Coss OVERMOLDED TO-220 (IXFP...M) oP 50 S 1.9  3610 pF 645 pF 2 pF 260 955 pF pF 18 ns 10 ns 62 ns 7 ns 50 nC 15 nC 17 nC VGS = 0V, VDS = 25V, f = 1MHz Crss 1 2 3 Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd Terminals: 1 - Gate 2 - Drain 3 - Source 3.5 C/W RthJC RthCS 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 60 A Repetitive, Pulse Width Limited by TJM 240 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 30A, -di/dt = 100A/μs 95 380 8 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFP60N25X3M o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 250 60 VGS = 10V VGS = 10V 8V 50 9V 200 7V 8V I D - Amperes I D - Amperes 40 6V 30 150 100 7V 50 6V 20 10 5V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 5 10 15 VDS - Volts 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 60 2.8 VGS = 10V 8V VGS = 10V 50 2.4 RDS(on) - Normalized 7V I D - Amperes 40 6V 30 20 2.0 I D = 60A I D = 30A 1.6 1.2 5V 0.8 10 4V 0.4 0 0 0.5 4.5 1 1.5 2.5 -50 3 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 30A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 3.5 BVDSS / VGS(th) - Normalized 4.0 RDS(on) - Normalized 2 o TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 1.1 BVDSS 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 20 40 60 80 100 120 140 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 160 180 200 220 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFP60N25X3M Fig. 8. Transconductance Fig. 7. Input Admittance 100 110 90 100 80 90 80 g f s - Siemens 70 I D - Amperes o TJ = - 40 C 60 50 40 o TJ = 125 C 30 o 70 25 C 60 o 50 125 C 40 30 o 25 C 20 o 20 - 40 C 10 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 10 20 30 40 VGS - Volts 60 70 80 90 100 110 40 45 50 55 220 240 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 350 9 300 VDS = 125V I D = 30A 8 250 I G = 10mA 7 VGS - Volts I S - Amperes 50 I D - Amperes 200 150 o TJ = 25 C 6 5 4 3 100 o TJ = 125 C 2 50 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 5 10 15 20 VSD - Volts 25 30 35 QG - NanoCoulombs Fig. 12. Output Capacitance Stored Energy Fig. 11. Capacitance 8 100000 7 6 Ciss EOSS - MicroJoules Capacitance - PicoFarads 10000 1000 Coss 100 4 3 2 Crss 10 5 1 f = 1 MHz 0 1 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 20 40 60 80 100 120 140 VDS - Volts 160 180 200 IXFP60N25X3M Fig. 14. Maximum Transient Thermal Impedance Fig. 13. Forward-Bias Safe Operating Area 10 1000 RDS(on) Limit 1 10 Z (th )JC - K / W I D - A m p e re s 100 100μs 1 0.1 1ms o 0.01 10ms TJ = 150 C 0.1 o DC TC = 25 C Single Pulse 0.01 1 10 100 VDS - Volts © 2019 IXYS CORPORATION, All Rights Reserved 1,000 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS REF: F_60N25X3 (24-S301) 4-19-17 IXFP60N25X3M Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.