IXFP72N20X3

IXFA72N20X3 IXFP72N20X3 IXFQ72N20X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 200V = 72A  20m  TO-263 (IXFA) G S D (Tab) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 200 V VDGR TJ = 25C to 150C, RGS = 1M 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 72 A IDM TC = 25C, Pulse Width Limited by TJM 130 A TO-220 (IXFP) IA TC = 25C 36 A EAS TC = 25C 1.2 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns PD TC = 25C 320 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 5.5 g g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-3P) Weight TO-263 TO-220 TO-3P G D S D (Tab) TO-3P (IXFQ) G D S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 200 VGS(th) VDS = VGS, ID = 1.5mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V 4.5 V 100 nA 5 250 TJ = 125C  A A Applications   15.7 20.0 m    © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100839D(6/18) IXFA72N20X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 30 RGi Gate Input Resistance S  2 Ciss Coss 48 3780 pF 660 pF 1.7 pF 340 1030 pF pF 23 ns 28 ns 78 ns 11 ns 55 nC 19 nC 15 nC VGS = 0V, VDS = 25V, f = 1MHz Crss IXFP72N20X3 IXFQ72N20X3 Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.39 C/W RthJC RthCS TO-220 TO-3P 0.50 0.21 C/W C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 72 A Repetitive, pulse Width Limited by TJM 288 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 36A, -di/dt = 100A/μs 95 380 8 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA72N20X3 IXFP72N20X3 IXFQ72N20X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 200 80 VGS = 10V 9V 70 VGS = 10V 180 160 9V 8V 140 50 40 I D - Amperes I D - Amperes 60 7V 30 120 8V 100 80 7V 60 20 40 6V 10 20 6V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 5 10 15 VDS - Volts 3.0 80 VGS = 10V 9V 8V RDS(on) - Normalized I D - Amperes 30 VGS = 10V 2.6 60 50 7V 40 30 6V 20 2.2 I D = 72A 1.8 I D = 36A 1.4 1.0 0.6 10 5V 0.2 0 0 4.5 0.5 1 1.5 2 2.5 3 -50 3.5 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 36A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 BVDSS / VGS(th) - Normalized 4.0 3.5 RDS(on) - Normalized 25 Fig. 4. RDS(on) Normalized to ID = 36A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 70 20 VDS - Volts o TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 20 40 60 80 100 120 140 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 160 180 200 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFA72N20X3 Fig. 7. Maximum Drain Current vs. Case Temperature IXFP72N20X3 IXFQ72N20X3 Fig. 8. Input Admittance 80 100 90 70 VDS = 10V 80 60 I D - Amperes I D - Amperes 70 50 40 30 60 50 40 o TJ = 125 C 30 o o 25 C 20 - 40 C 20 10 10 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 5.0 5.5 TC - Degrees Centigrade Fig. 9. Transconductance 7.0 7.5 8.0 350 90 VDS = 10V o TJ = - 40 C 300 80 70 250 o 60 I S - Amperes 25 C o 125 C 50 40 30 200 150 o TJ = 125 C 100 o TJ = 25 C 20 50 10 0 0 0 10 20 30 40 50 60 70 80 90 100 0.2 0.4 0.6 0.8 I D - Amperes 1.0 1.2 1.4 1.6 1.8 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 10 100000 9 f = 1 MHz VDS = 100V I D = 36A 8 Capacitance - PicoFarads I G = 10mA 7 VGS - Volts 6.5 Fig. 10. Forward Voltage Drop of Intrinsic Diode 100 g f s - Siemens 6.0 VGS - Volts 6 5 4 3 2 10000 Ciss 1000 Coss 100 C rss 10 1 0 1 0 5 10 15 20 25 30 35 40 45 50 55 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFA72N20X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 7 6 RDS(on) Limit 100 5 I D - Amperes EOSS - MicroJoules IXFP72N20X3 IXFQ72N20X3 4 3 2 10 100μs 1 o TJ = 150 C o 1 1ms TC = 25 C Single Pulse 0 DC 10ms 0.1 0 20 40 60 80 100 120 140 160 180 200 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_72N20X3 (24-S202) 5-31-17 IXFA72N20X3 TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-3P Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFP72N20X3 IXFQ72N20X3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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