IXFP72N20X3M

IXFP72N20X3M X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) D = 200V = 72A  20m  (Electrically Isolated Tab) G N-Channel Enhancement Mode OVERMOLDED TO-220 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 200 V VDGR TJ = 25C to 150C, RGS = 1M 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C, Limited by TJM IDM TC = 25C, Pulse Width Limited by TJM 72 A 130 A IA TC = 25C 36 A EAS TC = 25C 1.2 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 36 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 2500 V~ 1.13 / 10 Nm/lb.in 2.5 g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute Md Mounting Torque Weight G DS G = Gate S = Source Isolated Tab D = Drain Features       International Standard Package Plastic Overmolded Tab Low RDS(ON) and QG Avalanche Rated 2500V~ Electrical Isolation Low Package Inductance Advantages    High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 200 VGS(th) VDS = VGS, ID = 1.5mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 36A, Note 1 4.5  V  V  100 nA  5 A 250 A TJ = 125C © 2019 IXYS CORPORATION, All Rights Reserved  Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 15.7 20.0 m DS100840E(11/19) IXFP72N20X3M Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 30 RGi Gate Input Resistance S  2 Ciss Coss 48 3780 pF 660 pF 1.7 pF 340 1030 pF pF 23 ns 28 ns 78 ns 11 ns 55 nC 19 nC 15 nC VGS = 0V, VDS = 25V, f = 1MHz Crss OVERMOLDED TO-220 (IXFP...M) oP 1 2 3 Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd Terminals: 1 - Gate 2 - Drain 3 - Source 3.5 C/W RthJC RthCS 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 72 A Repetitive, Pulse Width Limited by TJM 288 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 36A, -di/dt = 100A/μs 95 380 8 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFP72N20X3M o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 200 80 VGS = 10V 9V 70 VGS = 10V 180 160 9V 8V 140 50 40 I D - Amperes I D - Amperes 60 7V 30 120 8V 100 80 7V 60 20 40 6V 10 20 6V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 5 10 15 VDS - Volts 3.0 80 VGS = 10V 9V 8V RDS(on) - Normalized I D - Amperes 30 VGS = 10V 2.6 60 50 7V 40 30 6V 20 2.2 I D = 72A 1.8 I D = 36A 1.4 1.0 0.6 10 5V 0.2 0 0 4.5 0.5 1 1.5 2 2.5 3 -50 3.5 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 36A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 BVDSS / VGS(th) - Normalized 4.0 3.5 RDS(on) - Normalized 25 Fig. 4. RDS(on) Normalized to ID = 36A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 70 20 VDS - Volts o TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 20 40 60 80 100 120 140 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 160 180 200 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFP72N20X3M Fig. 8. Transconductance Fig. 7. Input Admittance 100 100 90 VDS = 10V 80 80 70 70 g f s - Siemens I D - Amperes 90 60 50 40 o TJ = 125 C 30 o o 25 C o 125 C 50 40 30 - 40 C 20 o TJ = - 40 C 60 o 25 C VDS = 10V 20 10 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 10 20 30 40 70 80 90 100 50 55 10 9 VDS = 100V 300 I D = 36A 8 250 I G = 10mA 7 VGS - Volts I S - Amperes 60 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 350 200 150 o TJ = 125 C 6 5 4 3 100 o TJ = 25 C 2 50 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 5 10 15 20 VSD - Volts 25 30 35 40 45 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100000 f = 1 MHz RDS(on) Limit 10000 100 Ciss I D - Amperes Capacitance - PicoFarads 50 I D - Amperes VGS - Volts 1000 Coss 100 100μs 1 Crss 10 10 o TJ = 150 C o 1ms TC = 25 C Single Pulse DC 10ms 0.1 1 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFP72N20X3M Fig. 14. Maximum Transient Thermal Impedance Fig. 13. Output Capacitance Stored Energy 10 7 6 Z (th)JC - K / W E OSS - MicroJoules 1 5 4 3 2 0.1 0.01 1 0 0 20 40 60 80 100 120 VDS - Volts © 2019 IXYS CORPORATION, All Rights Reserved 140 160 180 200 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS REF: F_72N20X3(24-S202) 5-31-17 IXFP72N20X3M Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.