IXFP72N30X3M

IXFP72N30X3M X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) D = 300V = 72A  19m  (Electrically Isolated Tab) G N-Channel Enhancement Mode OVERMOLDED TO-220 S Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 300 V VDGR TJ = 25C to 150C, RGS = 1M 300 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C, Limited by TJM 72 A IDM TC = 25C, Pulse Width Limited by TJM 150 A IA TC = 25C 36 A EAS TC = 25C 1 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 36 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 2500 V~ 1.13 / 10 Nm/lb.in 2.5 g TJ G G = Gate S = Source Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute Md Mounting Torque Weight      VGS = 0V, ID = 250μA 300 VGS(th) VDS = VGS, ID = 1.5mA 2.5   IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 36A, Note 1  V  4.5 V 100 nA High Power Density Easy to Mount Space Savings    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 5 A 750 A TJ = 125C © 2019 IXYS CORPORATION, All Rights Reserved International Standard Package Plastic Overmolded Tab Low RDS(ON) and QG Avalanche Rated 2500V~ Electrical Isolation Low Package Inductance Applications Characteristic Values Min. Typ. Max. BVDSS D = Drain Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Isolated Tab Features  TL TSOLD DS 15 19 m DS100854C(11/19) IXFP72N30X3M Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 36A, Note 1 36 RGi Gate Input Resistance Ciss Coss 60 S 1.7  5400 pF 800 pF 2 pF 310 1200 pF pF 22 ns 25 ns 86 ns 11 ns 82 nC 25 nC 25 nC VGS = 0V, VDS = 25V, f = 1MHz Crss OVERMOLDED TO-220 (IXFP...M) oP 1 2 3 Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 36A RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 36A Qgd Terminals: 1 - Gate 2 - Drain 3 - Source 3.5 C/W RthJC RthCS 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 72 A Repetitive, Pulse Width Limited by TJM 288 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 36A, -di/dt = 100A/μs 100 750 15 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFP72N30X3M o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 80 300 VGS = 10V 9V 8V 70 VGS = 10V 250 7V 9V 8V 200 50 I D - Amperes I D - Amperes 60 6V 40 30 150 7V 100 20 6V 50 5V 10 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 1.6 5 10 15 VDS - Volts 80 3.0 VGS = 10V 8V 30 VGS = 10V 2.6 RDS(on) - Normalized 7V 60 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 36A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 70 20 VDS - Volts 50 6V 40 30 5V 20 2.2 I D = 72A 1.8 I D = 36A 1.4 1.0 0.6 10 4V 0.2 0 0 4.5 0.5 1 1.5 2 2.5 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 36A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 BVDSS / VGS(th) - Normalized 4.0 3.5 RDS(on) - Normalized -50 3 o TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 1.0 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.6 0.5 0.5 0 50 100 150 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 200 250 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFP72N30X3M Fig. 7. Input Admittance Fig. 8. Transconductance 120 140 o VDS = 10V 100 100 g f s - Siemens 80 I D - Amperes TJ = - 40 C VDS = 10V 120 60 o TJ = 125 C 40 o 25 C o 25 C 80 o 125 C 60 40 o - 40 C 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 20 40 60 VGS - Volts 80 100 120 140 I D - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 250 200 8 150 6 V GS - Volts I S - Amperes VDS = 150V 100 I D = 36A I G = 10mA 4 o TJ = 125 C 2 50 o TJ = 25 C 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 1.4 10 20 30 40 50 60 70 80 90 QG - NanoCoulombs VSD - Volts Fig. 11. Capacitance Fig. 12. Output Capacitance Stored Energy 14 100,000 12 Ciss E OSS - MicroJoules Capacitance - PicoFarads 10,000 1,000 Coss 100 Crss 10 8 6 4 10 2 f = 1 MHz 1 0 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 50 100 150 VDS - Volts 200 250 300 IXFP72N30X3M Fig. 14. Maximum Transient Thermal Impedance Fig. 13. Forward-Bias Safe Operating Area 10 1000 RDS(on) Limit 1 25μs Z (th)JC - K / W I D - Amperes 100 10 100μs 1 0.1 0.01 o TJ = 150 C o TC = 25 C Single Pulse 1ms DC 0.1 1 10 100 VDS - Volts © 2019 IXYS CORPORATION, All Rights Reserved 10ms 100ms 1,000 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS REF: F_72N30X3(25-S301) 7-18-17 IXFP72N30X3M Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.