IXFP7N100P

IXFA7N100P IXFP7N100P IXFH7N100P Polar TM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 1000V = 7A  1.9  TO-263 (IXFA) G S D (Tab) TO-220 (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 7 A IDM TC = 25C, Pulse Width Limited by TJM 18 A IA TC = 25C 7 A EAS TC = 25C 300 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150C 10 V/ns PD TC = 25C 300 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 6.0 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) Weight TO-263 TO-220 TO-247 G D S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features      International Standard Packages Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 1000 VGS(th) VDS = VGS, ID = 1mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V   V 6.0 V 100 nA  Applications  TJ = 125C 15 A 1 mA   RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 1.9    © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99924D(11/18) IXFA7N100P IXFP7N100P IXFH7N100P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 20V, ID = 0.5 • ID25, Note 1 3.6 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 6.0 S 1.8  2590 pF 158 pF 26 pF 25 ns 49 ns 42 ns 44 ns 47 nC 21 nC 21 nC 0.42 C/W RthJC RthCS TO-220 TO-247 C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V, Note1 ISM Characteristic Values Min. Typ. Max 7 A Repetitive, Pulse Width Limited by TJM 28 A VSD IF = IS, VGS = 0V, Note 1 1.3 V trr QRM IRM IF = 3.5A, -di/dt = 100A/μs Note 0.4 4.0 VR = 100V 300 ns C A 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA7N100P IXFP7N100P IXFH7N100P o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 14 7 VGS = 10V 8V 6 VGS = 10V 12 7V 10 I D - Amperes I D - Amperes 5 4 3 2 8V 8 7V 6 4 6V 1 6V 2 5V 0 0 0 2 4 6 8 10 12 14 0 5 10 15 VDS - Volts 20 25 30 35 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 3.5A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 3.0 7 VGS = 10V 8V 6 VGS = 10V 2.6 RDS(on) - Normalized 7V I D - Amperes 5 4 6V 3 2 1 2.2 I D = 7A 1.8 I D = 3.5A 1.4 1.0 0.6 5V 0.2 0 0 3 6 9 12 15 18 21 24 -50 27 -25 0 Fig. 5. RDS(on) Normalized to ID = 3.5A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 8 VGS = 10V 2.4 7 o TJ = 125 C 2.2 6 2.0 I D - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 1.8 1.6 1.4 5 4 3 2 1.2 o TJ = 25 C 1 1.0 0.8 0 0 2 4 6 8 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 10 12 14 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFA7N100P IXFP7N100P IXFH7N100P Fig. 7. Input Admittance Fig. 8. Transconductance 14 14 12 12 o o 10 TJ = 125 C 8 25 C o - 40 C o 25 C 10 g f s - Siemens I D - Amperes TJ = - 40 C o 6 8 o 125 C 6 4 4 2 2 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 2 4 6 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 12 14 16 Fig. 10. Gate Charge VDS = 500V 14 25 I D = 3.5A I G = 10mA 12 20 VGS - Volts I S - Amperes 10 16 30 15 10 8 6 10 o TJ = 125 C 4 o TJ = 25 C 5 2 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 10 20 VSD - Volts 30 40 50 60 70 QG - NanoCoulombs Fig. 14. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10,000 Ciss RDS(on) Limit 10 25μs 1,000 I D - Amperes Capacitance - PicoFarads 8 I D - Amperes Coss 100μs 1ms 1 100 0.1 Crss o TJ = 150 C 10ms 100ms o TC = 25 C Single Pulse f = 1 MHz 10 DC 0.01 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFA7N100P IXFP7N100P IXFH7N100P Fig. 13. Maximum Transient Thermal Impedance Z (th )J C - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_7N100P(56) 5-28-14-A IXFA7N100P IXFP7N100P IXFH7N100P TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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