IXFP7N60P3

IXFA7N60P3 IXFP7N60P3 Polar3 TM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 600V = 7A  1.15  TO-263 (IXFA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 7 A IDM TC = 25C, Pulse Width Limited by TJM 16 A IA TC = 25C 3.5 A EAS TC = 25C 400 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150C 35 V/ns PD TC = 25C 180 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in. 2.5 3.0 g g TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-220) Weight TO-263 TO-220 D (Tab) TO-220 (IXFP) G D S G = Gate S = Source       600 VGS(th) VDS = VGS, ID = 1mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1  V  TJ = 125C © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Applications Characteristic Values Min. Typ. Max. VGS = 0V, ID = 1mA International Standard Packages Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages  BVDSS D = Drain Tab = Drain Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D (Tab) 5.0 V 100 nA 10 125 A μA 1.15     Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100428B(6/18) IXFA7N60P3 IXFP7N60P3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 20V, ID = 0.5 • ID25, Note 1 4 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 7 S 6.0  705 pF 84 pF 4.5 pF 13 ns 12 ns 27 ns 10 ns 13.3 nC 3.7 nC 5.1 nC Pins: 1 - Gate 2,4 - Drain 3 - Source 0.69 C/W RthJC RthCS TO-263 Outline TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V, Note1 ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 7 A 28 A 1.4 TO-220 Outline E A oP A1 V H1 Q trr QRM IRM IF = 7A, -di/dt = 25A/μs 0.36 2.60 VR = 100V 250 ns C A D2 D D1 E1 A2 EJECTOR L1 L e Note 1. Pulse test, t  300s, duty cycle, d 2%. 3X b c e1 3X b2 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA7N60P3 IXFP7N60P3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 7 VGS = 10V 8V 6 VGS = 10V 8V 14 7V 12 7V 5 I D - Amperes I D - Amperes 10 4 6V 3 2 8 6 6V 4 1 2 5V 5V 0 0 0 1 2 3 4 5 6 7 8 0 9 5 10 15 7 3.4 VGS = 10V 7V 30 VGS = 10V 3.0 6V RDS(on) - Normalized 5 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 3.5A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 6 20 VDS - Volts VDS - Volts 4 3 2 5V 2.6 I D = 7A 2.2 I D = 3.5A 1.8 1.4 1.0 1 0.6 4V 0 0.2 0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 3.5A Value vs. Drain Current 3.4 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature 8 VGS = 10V 7 3.0 o 6 2.6 2.2 I D - Amperes R DS(on) - Normalized TJ = 125 C o TJ = 25 C 1.8 1.4 5 4 3 2 1.0 1 0.6 0 0 2 4 6 8 10 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 12 14 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFA7N60P3 IXFP7N60P3 Fig. 7. Input Admittance Fig. 8. Transconductance 14 9 o TJ = - 40 C 8 12 7 10 o g f s - Siemens I D - Amperes 6 5 4 o TJ = 125 C o 25 C 3 o - 40 C 25 C 8 o 125 C 6 4 2 2 1 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 1 2 3 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 6 7 8 9 10 Fig. 10. Gate Charge 10 18 9 16 8 14 7 12 6 VGS - Volts I S - Amperes 5 I D - Amperes 20 10 8 4 o TJ = 125 C 6 VDS = 300V I D = 3.5A I G = 10mA 5 4 3 o TJ = 25 C 4 2 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1.0 2 VSD - Volts 4 6 8 10 12 14 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 100 Ciss 1,000 RDS(on) Limit 10 25μs I D - Amperes Capacitance - PicoFarads f = 1 MHz 100 Coss 100μs 1 10 o TJ = 150 C o TC = 25 C Single Pulse C rss 1 1ms 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFA7N60P3 IXFP7N60P3 Fig. 13. Maximum Transient Thermal Impedance Z(th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_7N60P3(K3)12-08-11 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.