IXFP8N50P3

IXFA8N50P3 IXFP8N50P3 Polar3 TM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 500V = 8A  800m  TO-263 (IXFA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 8 A IDM TC = 25C, Pulse Width Limited by TJM 20 A IA TC = 25C 4 A EAS TC = 25C 200 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150C 35 V/ns PD TC = 25C 180 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 2.5 3.0 g g TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-220) Weight TO-263 TO-220 D (Tab) TO-220 (IXFP) G D S G = Gate S = Source       BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 1.5mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1  V  100 nA TJ = 125C © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Applications V 5.0 International Standard Packages Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages  Characteristic Values Min. Typ. Max. D = Drain Tab = Drain Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D (Tab) 10 A 100 μA    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls 800 m DS100455B(6/18) IXFA8N50P3 IXFP8N50P3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 4.6 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 7.6 S 6.0  705 pF 90 pF 4 pF 13 ns 10 ns 29 ns 8 ns Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10 (External) Qg(on) Qgs 13 nC 4 nC 5 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.69 C/W RthJC RthCS TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V, Note1 ISM Characteristic Values Min. Typ. Max 8 A Repetitive, Pulse Width Limited by TJM 32 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 4A, -di/dt = 100A/μs 0.7 6.6 250 ns C A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA8N50P3 IXFP8N50P3 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 8 18 VGS = 10V 8V 7V 7 14 6 7V 6V 12 5 I D - Amperes I D - Amperes VGS = 10V 8V 16 4 3 10 8 6V 6 2 4 5V 1 2 0 5V 0 0 1 2 3 4 5 6 7 0 8 5 10 15 8 3.4 VGS = 10V 7V 6V RDS(on) - Normalized I D - Amperes 30 5 4 5V 3 VGS = 10V 3.0 6 2 2.6 I D = 8A 2.2 I D = 4A 1.8 1.4 1.0 1 0.6 4V 0 0.2 0 2 4 6 8 10 12 14 16 18 -50 -25 0 VDS - Volts 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 9 VGS = 10V 3.4 25 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 4A Value vs. Drain Current 3.8 8 7 3.0 o TJ = 125 C 6 2.6 I D - Amperes RDS(on) - Normalized 25 Fig. 4. RDS(on) Normalized to ID = 4A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 7 20 VDS - Volts VDS - Volts 2.2 1.8 4 3 o TJ = 25 C 1.4 5 2 1.0 1 0.6 0 0 2 4 6 8 10 12 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 14 16 18 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFA8N50P3 IXFP8N50P3 Fig. 7. Input Admittance 14 Fig. 8. Transconductance 16 o 12 10 o g f s - Siemens I D - Amperes TJ = - 40 C 14 12 8 6 o TJ = 125 C o 25 C 25 C 10 o 8 125 C 6 o - 40 C 4 4 2 2 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 1 2 3 4 VGS - Volts 5 6 7 8 9 10 11 12 13 14 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 25 10 VDS = 250V 9 I D = 4A 8 20 I G = 10mA 15 VGS - Volts I S - Amperes 7 10 6 5 4 3 o TJ = 125 C o TJ = 25 C 5 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1.0 2 4 VSD - Volts Fig. 11. Capacitance 10,000 6 8 10 12 14 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area 100 f = 1 MHz 1,000 25μs 10 I D - Amperes Capacitance - PicoFarads RDS(on) Limit Ciss 100 Coss 100μs 1 10 o TJ = 150 C o TC = 25 C Single Pulse Crss 1 1ms 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFA8N50P3 IXFP8N50P3 Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - K / W 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_8N50P3(K3)3-22-12 IXFA8N50P3 IXFP8N50P3 TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.