IXFP8N65X2

IXFY8N65X2 IXFA8N65X2 IXFP8N65X2 X2-Class HiPERFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS(on) = 650V = 8A  450m D TO-252 (IXFY) G G S S D (Tab) TO-263 (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA 8 A 16 A TC = 25C 4 A EAS TC = 25C 250 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 150 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10.65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 0.35 2.50 3.00 g g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-252 TO-263 TO-220 G S D (Tab) TO-220 (IXFP) G D S G = Gate S = Source    BVDSS VGS = 0V, ID = 250µA 650 VGS(th) VDS = VGS, ID = 250µA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2020 IXYS CORPORATION, All Rights Reserved International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages  Characteristic Values Min. Typ. Max. D = Drain Tab = Drain Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D (Tab)   High Power Density Easy to Mount Space Savings V 5.0 V Applications 100 nA  10 A 500 A  450 m    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100732B(1/20) IXFY8N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 3.6 Ciss Coss td(on) tr td(off) tf S 5  790 pF pF 2.2 pF 42 130 pF pF 17 ns 11 ns 29 ns 15 ns 11.0 nC 2.3 nC 6.2 nC Effective Output Capacitance Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 30 (External) Qg(on) Qgs 6.0 590 VGS = 0V, VDS = 25V, f = 1MHz Crss Co(er) Co(tr) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.83 C/W RthJC RthCS IXFA8N65X2 IXFP8N65X2 TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 8 A Repetitive, Pulse Width Limited by TJM 32 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 4A, -di/dt = 100A/µs 105 460 8.7 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFY8N65X2 IXFA8N65X2 IXFP8N65X2 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 20 8 VGS = 10V V GS = 10V 9V 18 7 8V 16 6 I D - Amperes I D - Amperes 14 7V 5 4 3 8V 12 10 8 7V 6 2 6V 4 1 6V 2 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 8 VDS - Volts 20 24 28 32 Fig. 4. RDS(on) Normalized to ID = 4A Value vs. Junction Temperature o 8 3.5 VGS = 10V 8V VGS = 10V 3.0 7V RDS(on) - Normalized 6 I D - Amperes 16 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125 C 7 12 5 4 6V 3 2 I D = 8A 2.0 I D = 4A 1.5 1.0 0.5 5V 1 2.5 4V 0.0 0 0 5.0 1 2 3 4 5 6 8 -50 9 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 4A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 9 VGS = 10V 4.5 125 150 8 4.0 7 o TJ = 125 C 3.5 6 I D - Amperes R DS(on) - Normalized 7 3.0 2.5 2.0 5 4 3 o TJ = 25 C 1.5 2 1.0 1 0.5 0 0 2 4 6 8 10 12 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 14 16 18 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFY8N65X2 Fig. 7. Input Admittance IXFA8N65X2 IXFP8N65X2 Fig. 8. Transconductance 16 12 o TJ = - 40 C 14 10 o g f s - Siemens I D - Amperes 12 10 8 o TJ = 125 C o 25 C 6 o - 40 C 25 C 8 o 125 C 6 4 4 2 2 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 2 4 6 VGS - Volts 8 10 12 14 16 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 25 20 8 15 6 10 VGS - Volts I S - Amperes VDS = 325V o I D = 4A I G = 10mA 4 TJ = 125 C o TJ = 25 C 5 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 2 4 6 8 10 12 QG - NanoCoulombs VSD - Volts Fig. 12. Output Capacitance Stored Energy Fig. 11. Capacitance 10000 9 1000 7 E OSS - MicroJoules Capacitance - PicoFarads 8 C iss 100 C oss 10 C rss 1 6 5 4 3 2 1 f = 1 MHz 0.1 0 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 100 200 300 VDS - Volts 400 500 600 IXFY8N65X2 IXFA8N65X2 IXFP8N65X2 Fig. 14. Maximum Transient Thermal Impedance Fig. 13. Forward-Bias Safe Operating Area 1 100 RDS(on) Limit 10 100µs 1 Z (th)JC - K / W I D - Am p eres 25µs 0.1 1ms 0.1 o TJ = 150 C o TC = 25 C Single Pulse DC 10ms 0.01 10 100 VDS - Volts © 2020 IXYS CORPORATION, All Rights Reserved 1,000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS REF: F_8N65X2(X2-S602) 6-10-16 IXFY8N65X2 TO-252 Outline IXFA8N65X2 IXFP8N65X2 TO-220 Outline TO-263 Outline E A E L1 2 L2 3 b2 b A1 A1 H1 Q D1 D 1 A oP E1 C2 D2 D 4 H D1 E1 L3 e c 0.43 [11.0] e A2 EJECTOR 0 PIN L1 L 0.34 [8.7] 0.66 [16.6] A2 1 - Gate 2,4 - Drain 3 - Source 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. e 0.20 [5.0] 0.10 [2.5] 0.12 [3.0] 0.06 [1.6] c e1 3X b 3X b2 1 - Gate 2,4 - Drain 3 - Source IXFY8N65X2 IXFA8N65X2 IXFP8N65X2 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved