IXFP8N85X

PreliminaryTechnical Information IXFA8N85XHV IXFP8N85X IXFQ8N85X X-Class HiPERFET Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode = 850V = 8A  850m  TO-263HV (IXFA) G S Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 850 V VDGR TJ = 25C to 150C, RGS = 1M 850 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 8 A IDM TC = 25C, Pulse Width Limited by TJM 16 A IA TC = 25C 4 A EAS TC = 25C 300 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 200 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 5.5 g g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263HV) Mounting Torque (TO-220 & TO-3P) Weight TO-263HV TO-220 TO-3P D (Tab) TO-220 (IXFP) Symbol G D S D (Tab) TO-3P (IXFQ) G D S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features      International Standard Packages High Voltage Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 850 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on)   V 5.5 V 100 nA TJ = 125C VGS = 10V, ID = 4A, Note 1  Applications 10 A 750 A  850 m     © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100804B(06/18) IXFA8N85XHV IXFP8N85X IXFQ8N85X Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 4A, Note 1 2.7 RGi Gate Input Resistance Ciss Coss 4.5 S 3  654 pF 714 pF 11 pF 40 120 pF pF 17.0 nC VGS = 0V, VDS = 25V, f = 1MHz Crss Effective Output Capacitance Co(er) Co(tr) Energy related Time related VGS = 0V VDS = 0.8 • VDSS Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 4A Qgd td(on) tr td(off) tf 3.6 nC 10.0 nC 15 ns 25 ns 32 ns 23 ns Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 4A RG = 10 (External) 0.63 C/W RthJC RthCS TO-220 TO-3P C/W C/W 0.50 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 8 A Repetitive, pulse Width Limited by TJM 32 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 4A, -di/dt = 100A/μs 125 1.1 18.0 VR = 100V ns μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA8N85XHV IXFP8N85X IXFQ8N85X o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 18 8 VGS = 10V VGS = 10V 16 7 9V 14 12 5 I D - Amperes I D - Amperes 6 8V 4 3 7V 9V 10 8 8V 6 2 4 7V 1 2 6V 0 6V 0 0 1 2 3 4 5 6 7 0 5 10 15 VDS - Volts 8 4.0 VGS = 10V 9V 30 VGS = 10V 3.5 6 3.0 8V RDS(on) - Normalized I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 4A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 7 20 VDS - Volts 5 4 7V 3 2 I D = 8A 2.0 I D = 4A 1.5 1.0 6V 1 2.5 0.5 5V 0 0.0 0 4.0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 4A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 150 VGS = 10V 1.2 BV DSS / V GS(th) - Normalized R DS(on) - Normalized 3.5 o TJ = 125 C 3.0 2.5 2.0 1.5 o TJ = 25 C BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 2 4 6 8 10 12 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 14 16 18 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFA8N85XHV IXFP8N85X IXFQ8N85X Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 9 5.0 8 4.5 4.0 7 3.5 I D - Amperes I D - Amperes 6 5 4 3 o TJ = 125 C 3.0 o 25 C 2.5 o - 40 C 2.0 1.5 2 1.0 1 0.5 0.0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 8.0 VGS - Volts Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 50 7 o TJ = - 40 C 6 40 o 25 C 5 I S - Amperes g f s - Siemens o 125 C 4 3 30 20 o TJ = 25 C 2 o TJ = 125 C 10 1 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0.4 6 0.5 0.6 0.7 0.8 1.0 1.1 1.2 1.3 1.4 1.5 Fig. 12. Capacitance Fig. 11. Gate Charge 10000 10 VDS = 425V 9 I D = 4A 8 1000 Capacitance - PicoFarads I G = 10mA 7 V GS - Volts 0.9 VSD - Volts I D - Amperes 6 5 4 3 2 Ciss 100 Coss 10 1 f = 1 MHz 1 0 Crss 0.1 0 2 4 6 8 10 12 14 16 18 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFA8N85XHV IXFP8N85X IXFQ8N85X Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 100 14 RDS(on) Limit 10 10 100μs I D - Amperes EOSS - MicroJoules 12 8 6 4 1 0.1 o TJ = 150 C 1ms o 2 TC = 25 C Single Pulse 0 DC 10ms 0.01 0 100 200 300 400 500 600 700 800 900 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_8N85X(U3-D901) 2-17-17 IXFA8N85XHV IXFP8N85X IXFQ8N85X TO-263HV Outline 1 = Gate 2 = Source 3 = Drain TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-3P Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.