IXFP8N85XM

IXFP8N85XM X-Class HiPERFET Power MOSFET VDSS ID25 RDS(on) D = 850V = 8A  850m  (Electrically Isolated Tab) G N-Channel Enhancement Mode OVERMOLDED TO-220 S Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 850 V VDGR TJ = 25C to 150C, RGS = 1M 850 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C, Limited by TJM 8 A IDM TC = 25C, Pulse Width Limited by TJM 16 A IA TC = 25C 4 A EAS TC = 25C 300 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 33 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 2500 V~ 1.13 / 10 Nm/lb.in 2.5 g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute Md Mounting Torque Weight G G = Gate S = Source        BVDSS VGS = 0V, ID = 250μA 850 VGS(th) VDS = VGS, ID = 250μA 3.0  IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 4A, Note 1   V 100 nA TJ = 125C © 2019 IXYS CORPORATION, All Rights Reserved International Standard Package Plastic Overmolded Tab High Voltage Package Low RDS(ON) and QG Avalanche Rated 2500V~ Electrical Isolation Low Package Inductance High Power Density Easy to Mount Space Savings Applications V 5.5 D = Drain Advantages  Characteristic Values Min. Typ. Max. Isolated Tab Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) DS 10 A 750 A    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 850 m DS100818C(11/19) IXFP8N85XM Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 4A, Note 1 2.7 RGi Gate Input Resistance Ciss Coss 4.5 S 3  654 pF 714 pF 11 pF 40 120 pF pF 17.0 nC VGS = 0V, VDS = 25V, f = 1MHz Crss OVERMOLDED TO-220 (IXFP...M) oP 1 2 3 Effective Output Capacitance Co(er) Co(tr) Energy related Time related VGS = 0V VDS = 0.8 • VDSS Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 4A Qgd td(on) tr td(off) tf 3.6 nC 10.0 nC 15 ns 25 ns 32 ns 23 ns Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 4A RG = 10 (External) Terminals: 1 - Gate 2 - Drain 3 - Source 3.78 C/W RthJC RthCS C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 8 A Repetitive, pulse Width Limited by TJM 32 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 4A, -di/dt = 100A/μs 125 1.1 18.0 VR = 100V ns μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFP8N85XM o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 18 8 VGS = 10V VGS = 10V 16 7 9V 14 9V 12 5 I D - Amperes I D - Amperes 6 8V 4 3 7V 10 8 8V 6 2 4 7V 1 2 6V 0 6V 0 0 1 2 3 4 5 6 7 0 5 10 15 VDS - Volts 8 4.0 VGS = 10V 9V 30 VGS = 10V 3.5 6 3.0 8V RDS(on) - Normalized I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 4A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 7 20 VDS - Volts 5 4 7V 3 2 I D = 8A 2.0 I D = 4A 1.5 1.0 6V 1 2.5 0.5 5V 0 0.0 0 4.0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 4A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 150 VGS = 10V 1.2 BVDSS / VGS(th) - Normalized RDS(on) - Normalized 3.5 o TJ = 125 C 3.0 2.5 2.0 1.5 o TJ = 25 C BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 2 4 6 8 10 12 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 14 16 18 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFP8N85XM Fig. 7. Input Admittance Fig. 8. Transconductance 7 5.0 o TJ = - 40 C 4.5 6 4.0 o o o TJ = 125 C 3.0 g f s - Siemens I D - Amperes 25 C 5 3.5 o 25 C o - 40 C 2.5 2.0 1.5 125 C 4 3 2 1.0 1 0.5 0.0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 0.5 1 1.5 2 VGS - Volts 2.5 3 3.5 4 4.5 5 5.5 6 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 50 VDS = 425V 9 I D = 4A 8 40 I G = 10mA 30 VGS - Volts I S - Amperes 7 20 6 5 4 o TJ = 25 C 3 o TJ = 125 C 10 2 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 2 4 6 VSD - Volts 8 10 12 14 16 18 800 900 QG - NanoCoulombs Fig. 12. Output Capacitance Stored Energy Fig. 11. Capacitance 10000 14 12 Ciss EOSS - MicroJoules Capacitance - PicoFarads 1000 100 Coss 10 10 8 6 4 1 f = 1 MHz 2 Crss 0 0.1 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 100 200 300 400 500 VDS - Volts 600 700 IXFP8N85XM Fig. 14. Maximum Transient Thermal Impedance Fig. 13. Forward-Bias Safe Operating Area 100 10 RDS(on) Limit 1 100μs 1 0.1 0.1 0.01 o TJ = 150 C 1ms o TC = 25 C Single Pulse DC 10ms 100ms 0.01 10 Z (th)JC - K / W I D - Amperes 10 100 VDS - Volts © 2019 IXYS CORPORATION, All Rights Reserved 1,000 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Second IXYS REF: F_8N85X (U3-D901) 2-17-17 IXFP8N85XM Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.