IXFP90N20X3M

IXFP90N20X3M X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) D = 200V = 90A  12.8m  (Electrically Isolated Tab) G N-Channel Enhancement Mode OVERMOLDED TO-220 S Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 200 V VDGR TJ = 25C to 150C, RGS = 1M 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C, Limited by TJM 90 A IDM TC = 25C, Pulse Width Limited by TJM 220 A IA TC = 25C 45 A EAS TC = 25C 1.5 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 36 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 2500 V~ 1.13 / 10 Nm/lb.in 2.5 g TJ G G = Gate S = Source Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute Md Mounting Torque Weight      VGS = 0V, ID = 250μA 200 VGS(th) VDS = VGS, ID = 1.5mA 2.5   IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 45A, Note 1  V  4.5 V 100 nA High Power Density Easy to Mount Space Savings    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 5 A 300 A TJ = 125C © 2019 IXYS CORPORATION, All Rights Reserved International Standard Package Plastic Overmolded Tab Low RDS(ON) and QG Avalanche Rated 2500V~ Electrical Isolation Low Package Inductance Applications Characteristic Values Min. Typ. Max. BVDSS D = Drain Advantages  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Isolated Tab Features  TL TSOLD DS 10.5 12.8 m DS100816E(11/19) IXFP90N20X3M Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 45A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 40 Ciss Coss 67 S 1.4  5420 pF 930 pF 4 pF 420 1300 pF pF 22 ns 26 ns 62 ns 13 ns 78 nC 23 nC 22 nC VGS = 0V, VDS = 25V, f = 1MHz Crss OVERMOLDED TO-220 (IXFP...M) oP 1 2 3 Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 45A RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 45A Qgd Terminals: 1 - Gate 2 - Drain 3 - Source 3.5 C/W RthJC RthCS 0.50 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 90 A Repetitive, Pulse Width Limited by TJM 360 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 45A, -di/dt = 100A/μs 95 360 7.6 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFP90N20X3M o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 400 90 VGS = 10V VGS = 10V 8V 80 350 70 7V I D - Amperes 60 I D - Amperes 9V 300 50 6V 40 30 250 200 8V 150 100 20 7V 5V 10 50 6V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 VDS - Volts 20 25 Fig. 4. RDS(on) Normalized to ID = 45A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 2.8 90 VGS = 10V 8V 80 15 VDS - Volts VGS = 10V 7V 2.4 RDS(on) - Normalized 70 I D - Amperes 60 50 6V 40 30 I D = 90A 2.0 I D = 45A 1.6 1.2 5V 20 0.8 10 4V 0 0.4 0 4.5 0.5 1 1.5 2.5 -50 3 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 45A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 3.5 BVDSS / VGS(th) - Normalized 4.0 RDS(on) - Normalized 2 o TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 50 100 150 200 250 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 300 350 400 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFP90N20X3M Fig. 7. Input Admittance Fig. 8. Transconductance 180 240 o TJ = - 40 C 160 200 140 g f s - Siemens I D - Amperes 160 120 80 o o 120 25 C 100 o 80 125 C 60 TJ = 125 C o 25 C 40 40 o - 40 C 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 40 80 120 VGS - Volts 200 240 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 400 VDS = 100V 350 I D = 45A 8 I G = 10mA 300 250 VGS - Volts I S - Amperes 160 I D - Amperes 200 150 6 4 o TJ = 125 C 100 2 o TJ = 25 C 50 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 10 20 30 VSD - Volts 40 50 60 70 80 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Output Capacitance Stored Energy 8 100000 6 Ciss EOSS - MicroJoules Capacitance - PicoFarads 7 10000 1000 Coss 100 Crss 5 4 3 2 10 1 f = 1 MHz 0 1 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 20 40 60 80 100 120 VDS - Volts 140 160 180 200 IXFP90N20X3M Fig. 14. Maximum Transient Thermal Impedance Fig. 13. Forward-Bias Safe Operating Area 10 1000 RDS(on) Limit 25μs 1 Z (th)JC - K / W I D - Amperes 100 100μs 10 1 0.01 o TJ = 150 C 1ms o TC = 25 C Single Pulse DC 0.1 1 0.1 10 100 VDS - Volts © 2019 IXYS CORPORATION, All Rights Reserved 10ms 100ms 1,000 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds IXYS REF: F_90N20X3(25-S202) 5-31-17-A IXFP90N20X3M Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.