IXFQ120N25X3

Preliminary Technical Information IXFT120N25X3HV IXFQ120N25X3 IXFH120N25X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 = 250V = 120A  12m  RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 250 V VDGR TJ = 25C to 150C, RGS = 1M 250 V VGSS Continuous 20 V VGSM Transient 30 V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 120 230 A A IA TC = 25C 60 A EAS TC = 25C 1.2 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns PD TC = 25C 480 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 4.0 5.5 6.0 g g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247 & TO-3P) Weight TO-268HV TO-3P TO-247 TO-3P (IXFQ) G D S D (Tab) TO-247 (IXFH) G Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 250 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1      V 100 nA 10 A 500 A 10 International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance 12 m High Power Density Easy to Mount Space Savings Applications      © 2017 IXYS CORPORATION, All Rights Reserved. D = Drain Tab = Drain Features  TJ = 125C D (Tab) Advantages V 4.5 S G = Gate S = Source  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100837C(11/17) IXFT120N25X3HV Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 60A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 54 Ciss Coss IXFQ120N25X3 IXFH120N25X3 VGS = 0V, VDS = 25V, f = 1MHz 90 S 1.6  7870 pF 1260 pF 2 pF 500 1900 pF pF 29 ns 32 ns 100 ns 12 ns 122 nC 40 nC 34 nC Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.26 C/W RthJC RthCS TO-247& TO-3P 0.21 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 120 A ISM Repetitive, pulse Width Limited by TJM 480 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 60A, -di/dt = 100A/μs 140 880 12.6 VR = 100V ns nC A Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFT120N25X3HV IXFQ120N25X3 IXFH120N25X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 400 120 VGS = 10V 9V VGS = 10V 350 8V 100 9V 300 7V I D - Amperes I D - Amperes 80 60 6V 40 8V 250 200 7V 150 100 20 6V 50 5V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 5 10 VDS - Volts 15 20 25 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 60A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 120 2.8 VGS = 10V 8V VGS = 10V 100 2.4 RDS(on) - Normalized 7V I D - Amperes 80 60 6V 40 20 2.0 I D = 120A 1.6 I D = 60A 1.2 0.8 5V 4V 0.4 0 0 4.0 0.5 1 1.5 2 2.5 -50 3 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 60A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 150 VGS = 10V 1.2 3.5 BVDSS / VGS(th) - Normalized o RDS(on) - Normalized TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 50 100 150 200 250 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved. 300 350 400 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFT120N25X3HV Fig. 7. Maximum Drain Current vs. Case Temperature IXFQ120N25X3 IXFH120N25X3 Fig. 8. Input Admittance 180 140 160 120 140 120 I D - Amperes I D - Amperes 100 80 60 100 80 o TJ = 125 C 60 o 25 C 40 o - 40 C 40 20 20 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 5.0 TC - Degrees Centigrade Fig. 9. Transconductance 6.0 6.5 7.0 7.5 Fig. 10. Forward Voltage Drop of Intrinsic Diode 180 500 o TJ = - 40 C 160 400 140 o 25 C 120 I S - Amperes g f s - Siemens 5.5 VGS - Volts 100 o 125 C 80 300 200 60 o TJ = 125 C 40 100 o TJ = 25 C 20 0 0 0 50 100 150 200 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 VDS = 125V Capacitance - PicoFarads I D = 60A 8 I G = 10mA 7 VGS - Volts 1.0 VSD - Volts I D - Amperes 6 5 4 3 2 10,000 Ciss 1,000 Coss 100 Crss 10 f = 1 MHz 1 0 1 0 20 40 60 80 100 120 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFT120N25X3HV Fig. 13. Output Capacitance Stored Energy IXFQ120N25X3 IXFH120N25X3 Fig. 14. Forward-Bias Safe Operating Area 1000 16 RDS(on) Limit 14 25μs 100 10 I D - Amperes EOSS - MicroJoules 12 8 6 4 100μs 10 1 o 1ms TJ = 150 C o TC = 25 C Single Pulse 2 0 0 50 100 150 10ms DC 0.1 200Maximum250 1 Fig. 15. Transient Thermal Impedance 10 100 1,000 VDS - Volts VDS - Volts 1 Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.4 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2017 IXYS CORPORATION, All Rights Reserved. IXYS REF: F_120N25X3 (26-S251) 5-24-17 IXFT120N25X3HV TO-268HV Outline PINS: 1 - Gate 2 - Source 3 - Drain TO-247 Outline D A A2 A2 Q + R S TO-3P Outline A 0P O + 0K M D B M B E D2 + D1 D 0P1 1 2 3 4 ixys option L1 C E1 L A1 c b b2 b4 e + J M C AM O PINS: 1 - Gate 2, 4 - Drain 3 - Source Pins: IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 - Gate 3 - Source 2 - Drain 4 - Drain IXFQ120N25X3 IXFH120N25X3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.