IXFQ140N20X3

Preliminary Technical Information IXFT140N20X3HV IXFQ140N20X3 IXFH140N20X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 = 200V = 140A  9.6m  RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 200 V VDGR TJ = 25C to 150C, RGS = 1M 200 V VGSS Continuous 20 V VGSM Transient 30 V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 140 250 A A IA TC = 25C 70 A EAS TC = 25C 1.7 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns PD TC = 25C 480 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 4.0 5.5 6.0 g g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247 & TO-3P) Weight TO-268HV TO-3P TO-247 TO-3P (IXFQ) G D S D (Tab) TO-247 (IXFH) G Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 200 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1      V 100 nA 10 A 500 A 8.0 International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance 9.6 m High Power Density Easy to Mount Space Savings Applications      © 2017 IXYS CORPORATION, All Rights Reserved. D = Drain Tab = Drain Features  TJ = 125C D (Tab) Advantages V 4.5 S G = Gate S = Source  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100843C(11/17) IXFT140N20X3HV Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 60A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 55 Ciss Coss IXFQ140N20X3 IXFH140N20X3 VGS = 0V, VDS = 25V, f = 1MHz 94 S 1.6  7660 pF 1290 pF 4.6 pF 630 2000 pF pF 28 ns 20 ns 130 ns 12 ns 127 nC 39 nC 32 nC Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.26 C/W RthJC RthCS TO-247& TO-3P 0.25 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 140 A ISM Repetitive, pulse Width Limited by TJM 540 A VSD IF = 100A, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 70A, -di/dt = 100A/μs 105 420 8 VR = 100V ns nC A Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFT140N20X3HV o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 140 450 VGS = 10V 9V 120 8V VGS = 10V 400 9V 350 7V 100 I D - Amperes I D - Amperes 300 80 60 6V 8V 250 200 7V 150 40 100 20 6V 50 5V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 5 10 VDS - Volts 20 25 Fig. 4. RDS(on) Normalized to ID = 70A Value vs. Junction Temperature o 2.8 140 VGS = 10V 8V 120 15 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125 C VGS = 10V 2.4 RDS(on) - Normalized 7V 100 I D - Amperes IXFQ140N20X3 IXFH140N20X3 80 6V 60 40 5V 2.0 I D = 140A 1.6 I D = 70A 1.2 0.8 20 4V 0.4 0 0 4.5 0.5 1 1.5 2.5 -50 3 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 70A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 3.5 BVDSS / VGS(th) - Normalized 4.0 RDS(on) - Normalized 2 o TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 50 100 150 200 250 300 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved. 350 400 450 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFT140N20X3HV Fig. 7. Maximum Drain Current vs. Case Temperature IXFQ140N20X3 IXFH140N20X3 Fig. 8. Input Admittance 160 180 140 160 VDS = 10V 140 120 I D - Amperes I D - Amperes 120 100 80 60 40 100 80 o TJ = 125 C 60 o 25 C 20 20 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 5.0 TC - Degrees Centigrade 6.0 6.5 7.0 Fig. 10. Forward Voltage Drop of Intrinsic Diode 400 o TJ = - 40 C 160 VDS = 10V 350 140 300 o 25 C 120 100 I S - Amperes g f s - Siemens 5.5 VGS - Volts Fig. 9. Transconductance 180 o 125 C 80 60 250 200 150 o TJ = 125 C 100 40 o TJ = 25 C 50 20 0 0 0 20 40 60 80 100 120 140 160 180 200 0.2 220 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD - Volts I D - Amperes Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 VDS = 100V Capacitance - PicoFarads I D = 70A 8 I G = 10mA 7 VGS - Volts o - 40 C 40 6 5 4 3 2 10,000 Ciss 1,000 Coss 100 Crss 10 f = 1 MHz 1 0 1 0 20 40 60 80 100 120 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFT140N20X3HV Fig. 13. Output Capacitance Stored Energy IXFQ140N20X3 IXFH140N20X3 Fig. 14. Forward-Bias Safe Operating Area 1000 12 RDS(on) Limit 10 25μs 8 I D - Amperes EOSS - MicroJoules 100 6 4 100μs 10 1 2 1ms o TJ = 150 C o TC = 25 C Single Pulse 0 0 1 20 40 60 80 100 120 140 160Maximum 180 200 Fig. 15. Transient 10ms DC 0.1 Thermal Impedance 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.4 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2017 IXYS CORPORATION, All Rights Reserved. IXYS REF: F_140N20X3 (26-S202) 6-15-17 IXFT140N20X3HV TO-268HV Outline PINS: 1 - Gate 2 - Source 3 - Drain TO-247 Outline D A A2 A2 Q + R S TO-3P Outline A 0P O + 0K M D B M B E D2 + D1 D 0P1 1 2 3 4 ixys option L1 C E1 L A1 c b b2 b4 e + J M C AM O PINS: 1 - Gate 2, 4 - Drain 3 - Source Pins: IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 - Gate 3 - Source 2 - Drain 4 - Drain IXFQ140N20X3 IXFH140N20X3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.