IXFQ24N50P2

IXFQ24N50P2 Polar2TM HiperFETTM Power MOSFET VDSS ID25 RDS(on) = 500V = 24A ≤ 270mΩ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-3P Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Maximum Ratings 500 500 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, Pulse Width Limited by TJM 24 50 A A IA EAS TC = 25°C TC = 25°C 12 750 A mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 480 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 5.5 g TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque Weight G D S G = Gate S = Source z z z z z z BVDSS VGS = 0V, ID = 250μA 500 VGS(th) VDS = VGS, ID = 1mA 2.5 IGSS VGS = ± 30V, VDS = 0V ± 100 nA IDSS VDS = VDSS, VGS = 0V 25 μA 1 mA RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 V z z z TJ = 125°C © 2011 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Applications V 4.5 Fast Intrinsic Diode Dynamic dv/dt Rating Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages z Characteristic Values Min. Typ. Max. D = Drain Tab = Drain Features z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Tab z z z Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Battery Chargers Uninterrupted Power Supplies AC and DC Motor Drives High Speed Power Switching Application 270 mΩ DS100271A(9/11) IXFQ24N50P2 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 14 Ciss Coss 24 S 2890 pF 280 pF 22 pF 15 ns 9 ns 30 ns 5 ns 48 nC 13 nC 16 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10Ω (External) Qg(on) Qgs TO-3P (IXFQ) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.26 °C/W RthCS 0.25 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 24 A ISM Repetitive, Pulse Width Limited by TJM 96 A VSD IF = IS, VGS = 0V, Note 1 1.3 V trr IF = 12A, -di/dt = 100A/μs 200 ns IRM QRM VR = 100V, VGS = 0V 10 A 0.69 μC Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFQ24N50P2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 25 55 VGS = 10V 7V VGS = 10V 7V 50 45 20 15 ID - Amperes ID - Amperes 40 6V 10 35 30 25 6V 20 15 5 10 5V 5 0 5V 0 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 12A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 25 3.4 VGS = 10V 7V VGS = 10V 3.0 R DS(on) - Normalized 20 ID - Amperes 6V 15 10 5V 2.6 I D = 24A 2.2 I D = 12A 1.8 1.4 1.0 5 0.6 4V 0 0.2 0 5 10 15 -50 20 -25 0 Fig. 5. RDS(on) Normalized to ID = 12A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 28 3.8 VGS = 10V 3.4 24 TJ = 125ºC 3.0 20 2.6 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 2.2 1.8 16 12 8 1.4 TJ = 25ºC 4 1.0 0.6 0 0 5 10 15 20 25 30 35 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 40 45 50 55 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFQ24N50P2 Fig. 7. Input Admittance Fig. 8. Transconductance 35 50 TJ = - 40ºC 30 40 TJ = 125ºC 25ºC - 40ºC 20 25ºC g f s - Siemens ID - Amperes 25 15 30 125ºC 20 10 10 5 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 5 10 VGS - Volts 20 25 30 35 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 80 10 VDS = 250V 70 I D = 12A 8 I G = 10mA 60 50 VGS - Volts IS - Amperes 15 40 30 6 4 TJ = 125ºC 20 TJ = 25ºC 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 5 10 VSD - Volts 15 20 25 30 35 40 45 50 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100 10,000 RDS(on) Limit 10 1,000 ID - Amperes Capacitance - PicoFarads 25µs Ciss Coss 100µs 1 100 1ms 0.1 TJ = 150ºC TC = 25ºC Single Pulse f = 1 MHz Crss 10ms 10 0.01 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1000 IXFQ24N50P2 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_24N50P2(57-N45)6-03-10-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.