IXFQ60N25X3

IXFA60N25X3 IXFP60N25X3 IXFQ60N25X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 250V = 60A  23m  TO-263 (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 250 V VDGR TJ = 25C to 150C, RGS = 1M 250 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 60 A IDM TC = 25C, Pulse Width Limited by TJM 210 A IA TC = 25C 30 A EAS TC = 25C 700 mJ dv/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns PD TC = 25C 320 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in 2.5 3.0 5.5 g g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s FC Md Mounting Force (TO-263) Mounting Torque (TO-220 & TO-3P) Weight TO-263 TO-220 TO-3P TO-220 (IXFP) G D S D (Tab) TO-3P (IXFQ) G D S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 250 VGS(th) VDS = VGS, ID = 1.5mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1   V 4.5 V 100 nA 5 500 TJ = 125C  A A Applications   19 23 m    © 2019 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100807D(8/19) IXFA60N25X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 30 RGi Gate Input Resistance Ciss Coss 50 S 1.9  3610 pF 645 pF 2 pF 260 955 pF pF 18 ns 10 ns 62 ns 7 ns 50 nC 15 nC 17 nC VGS = 0V, VDS = 25V, f = 1MHz Crss IXFP60N25X3 IXFQ60N25X3 Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 5 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.39 C/W RthJC RthCS TO-220 TO-3P 0.50 0.21 C/W C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 60 A Repetitive, pulse Width Limited by TJM 240 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 30A, -di/dt = 100A/μs 95 380 8 ns nC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA60N25X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 250 60 VGS = 10V VGS = 10V 8V 50 9V 200 7V 40 8V I D - Amperes I D - Amperes IXFP60N25X3 IXFQ60N25X3 6V 30 150 100 7V 50 6V 20 10 5V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 5 10 15 VDS - Volts 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 60 2.8 VGS = 10V 8V VGS = 10V 50 2.4 RDS(on) - Normalized 7V I D - Amperes 40 6V 30 20 2.0 I D = 60A I D = 30A 1.6 1.2 5V 0.8 10 4V 0.4 0 0 0.5 4.5 1 1.5 2.5 -50 3 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 30A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 150 1.2 3.5 BVDSS / VGS(th) - Normalized 4.0 RDS(on) - Normalized 2 o TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 1.1 BVDSS 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 20 40 60 80 100 120 140 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 160 180 200 220 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFA60N25X3 Fig. 7. Maximum Drain Current vs. Case Temperature IXFP60N25X3 IXFQ60N25X3 Fig. 8. Input Admittance 100 70 90 60 80 70 I D - Amperes I D - Amperes 50 40 30 60 50 40 o TJ = 125 C 30 20 o 25 C 20 10 o - 40 C 10 0 0 -50 -25 0 25 50 75 100 125 3.5 150 4.0 4.5 5.0 TC - Degrees Centigrade 6.0 6.5 7.0 Fig. 10. Forward Voltage Drop of Intrinsic Diode Fig. 9. Transconductance 110 350 o 100 TJ = - 40 C 300 90 80 250 o 70 25 C I S - Amperes g f s - Siemens 5.5 VGS - Volts 60 o 50 125 C 40 200 150 o TJ = 25 C 100 30 o TJ = 125 C 20 50 10 0 0 0 10 20 30 40 50 60 70 80 90 100 110 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Fig. 12. Capacitance Fig. 11. Gate Charge 10 100000 9 VDS = 125V I D = 30A 8 Capacitance - PicoFarads I G = 10mA 7 VGS - Volts 1.0 VSD - Volts I D - Amperes 6 5 4 3 2 10000 Ciss 1000 Coss 100 Crss 10 f = 1 MHz 1 0 1 0 5 10 15 20 25 30 35 40 45 50 55 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFA60N25X3 Fig. 13. Output Capacitance Stored Energy IXFP60N25X3 IXFQ60N25X3 Fig. 14. Forward-Bias Safe Operating Area 1000 8 RDS(on) Limit 7 100 5 I D - Amperes EOSS - MicroJoules 6 4 3 10 100μs 1 1ms 2 o TJ = 150 C 0.1 10ms o DC TC = 25 C Single Pulse 1 0 0.01 0 20 40 60 80 100 120 140 160 180 200 220 240 1 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: F_60N25X3 (24-S301) 4-19-17 IXFA60N25X3 TO-263 Outline 1 - Gate 2,4 - Drain 3 - Source TO-220 Outline 1 - Gate 2,4 - Drain 3 - Source TO-3P Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFP60N25X3 IXFQ60N25X3 IXFA60N25X3 IXFP60N25X3 IXFQ60N25X3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2019 IXYS CORPORATION, All Rights Reserved