IXFQ60N60X

Preliminary Technical Information IXFQ60N60X IXFH60N60X X-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-3P (IXFQ) G D Symbol Test Conditions VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 60 A IDM TC = 25C, Pulse Width Limited by TJM 120 A S D (Tab) Maximum Ratings IA TC = 25C 30 A EAS TC = 25C 2.5 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 890 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 5.5 6.0 g g TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque Weight TO-3P TO-247 TO-247 (IXFH) G Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2015 IXYS CORPORATION, All Rights Reserved S     Advantages  High Power Density Easy to Mount Space Savings Applications V  100 nA  25 A 1.25 mA D = Drain Tab = Drain International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance V 4.5 D (Tab) Features  Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D G = Gate S = Source  RDS(on) = 600V = 60A  55m     Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 55 m DS100656A(5/15) IXFQ60N60X IXFH60N60X Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 24 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz TO-3P Outline 40 S 1.4  5800 pF 4130 pF 40 pF 285 930 pF pF 27 ns 23 ns 90 ns 13 ns 143 nC 30 nC 70 nC Crss A A2 E 0P 0P1 E1 S + + + D1 D 4 1 2 3 L1 A1 Effective Output Capacitance Co(er) Co(tr) td(on) tr td(off) tf Energy related Time related VGS = 0V VDS = 0.8 • VDSS b4 e Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) Qg(on) Qgs c b b2 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd PINS: 1 - Gate 2, 4 - Drain 3 - Source 0.14 C/W RthJC RthCS C/W 0.25 Source-Drain Diode TO-247 Outline Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS Characteristic Values Min. Typ. Max VGS = 0V ISM 60 Repetitive, pulse Width Limited by TJM 240 D A A2 A2 Q + R A A 0P O + 0K M D B M B E S D2 + D1 D 0P1 A 1 2 3 4 ixys option L1 VSD IF = IS, VGS = 0V, Note 1 1.4 trr QRM IRM IF = 30A, -di/dt = 100A/μs 200 1.9 18.5 VR = 100V C V ns μC A E1 L A1 c b b2 b4 e + J M C AM O PINS: 1 - Gate 2, 4 - Drain 3 - Source Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFQ60N60X IXFH60N60X Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 60 VGS = 10V 9V 160 VGS = 10V 8V 50 140 7V 120 8V I D - Amperes I D - Amperes 40 30 6V 20 100 80 60 7V 40 6V 10 20 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 15 VDS - Volts 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 60 3.4 VGS = 10V 8V 7V 50 VGS = 10V 3.0 RDS(on) - Normalized 2.6 I D - Amperes 40 6V 30 20 I D = 60A 2.2 1.8 I D = 30A 1.4 1.0 5V 10 0.6 4V 0.2 0 0 1 2 3 4 5 6 7 -50 8 -25 0 25 50 75 100 125 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 30A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 4.0 150 1.3 VGS = 10V 3.5 1.2 BV DSS / V GS(th) - Normalized R DS(on) - Normalized TJ = 125ºC 3.0 2.5 2.0 TJ = 25ºC 1.5 1.0 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.5 0.6 0 20 40 60 80 100 120 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 140 160 180 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFQ60N60X IXFH60N60X Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 70 100 90 60 80 70 I D - Amperes I D - Amperes 50 40 30 60 50 TJ = 125ºC 25ºC - 40ºC 40 30 20 20 10 10 0 0 -50 -25 0 25 50 75 100 125 150 3.0 3.5 4.0 4.5 5.0 TC - Degrees Centigrade 5.5 6.0 6.5 7.0 7.5 8.0 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 80 200 TJ = - 40ºC 180 70 160 60 140 I S - Amperes g f s - Siemens 25ºC 50 125ºC 40 30 120 100 80 TJ = 125ºC 60 20 TJ = 25ºC 40 10 20 0 0 0 10 20 30 40 50 60 70 80 90 100 110 0.3 0.4 0.5 0.6 I D - Amperes 0.7 0.8 0.9 1.0 1.1 1.2 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 10 100,000 VDS = 300V Capacitance - PicoFarads I D = 30A 8 V GS - Volts I G = 10mA 6 4 2 Ciss 10,000 1,000 Coss 100 10 Crss f = 1 MHz 0 1 0 20 40 60 80 100 120 140 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFQ60N60X IXFH60N60X Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 45 1000 40 RDS(on) Limit 100 30 I D - Amperes EOSS - MicroJoules 35 25 20 25µs 100µs 10 1ms 15 1 10 TJ = 150ºC TC = 25ºC Single Pulse 5 0 10ms DC 0.1 0 100 200 300 400 500 600 10 100 VDS - Volts 100ms 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance 1 Z(th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: F_60N60X(J8-R4T45) 5-22-15-A Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.