IXFR24N100Q3

IXFR24N100Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr D (Electrically Isolated Tab) = =   1000V 18A 490m 300ns G N-Channel Enhancement Mode Fast Intrinsic Rectifier S ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 18 A IDM TC = 25C, Pulse Width Limited by TJM 60 A IA EAS TC = 25C TC = 25C 24 2 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 50 V/ns PD TC = 25C 500 W -55 ... +150 150 -55 ... +150 C C C  300 260 °C °C  2500 V  TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force G N/lb. 5 g Weight     BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) 1000 3.5 V 6.5 V 200 nA TJ = 125C VGS = 10V, ID = 12A, Note 1 © 2020 IXYS CORPORATION, All Rights Reserved 25 A 1.5 mA = Drain Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Low Intrinsic Gate Resistance 2500V~ Electrical Isolation Fast Intrinsic Rectifier Avalanche Rated Low Package Inductance Advantages  Characteristic Values Min. Typ. Max. D Features  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Isolated Tab S G = Gate S = Source  20..120/4.5..27 D High Power Density Easy to Mount Space Savings Applications      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 490 m DS100394A(1/20) IXFR24N100Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 14 VDS = 20V, ID = 12A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 24 S 7200 pF 590 pF 50 pF Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 0.18 Qgs  38 ns 24 ns 45 ns 14 ns 140 nC 47 nC 60 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 12A RG = 1 (External) Qg(on)  VGS = 10V, VDS = 0.5 • VDSS, ID = 12A Qgd RthJC 0.25C/W RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 24 A ISM Repetitive, Pulse Width Limited by TJM 96 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM Note IF = 12A, -di/dt = 100A/s 1.9 12.4 VR = 100V, VGS = 0V 300 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR24N100Q3 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 24 VGS = 10V 50 8V 40 VGS = 10V 20 I D - Amperes I D - Amperes 16 12 8 7V 30 8V 20 10 4 7V 6V 0 1 2 3 4 5 6 7 8 9 0 10 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 125oC Fig. 4. RDS(on) Normalized to ID = 12A Value vs. Junction Temperature 3.4 24 VGS = 10V 2.6 RDS(on) - Normalized 7V 16 VGS = 10V 3.0 20 I D - Amperes 6V 0 0 12 8 I D = 24A 2.2 I D = 12A 1.8 1.4 1.0 6V 4 0.6 5V 0 0.2 0 2 2.8 4 6 8 10 12 14 16 18 20 22 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 12A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 20 VGS = 10V 2.6 o TJ = 125 C 16 2.2 I D - Amperes R DS(on) - Normalized 2.4 2.0 1.8 1.6 12 8 o TJ = 25 C 1.4 4 1.2 1.0 0 0.8 0 5 10 15 20 25 30 35 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 40 45 50 55 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFR24N100Q3 Fig. 8. Transconductance Fig. 7. Input Admittance 60 50 o VDS = 20V 45 50 40 g f s - Siemens 35 I D - Amperes TJ = - 40 C VDS = 20V 30 25 o TJ = 125 C 20 o 25 C 15 40 o 25 C 30 o 125 C 20 o - 40 C 10 10 5 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 5 10 15 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 30 35 40 45 50 Fig. 10. Gate Charge 16 70 14 60 12 50 10 V GS - Volts I S - Amperes 25 I D - Amperes 80 40 20 o TJ = 125 C 30 VDS = 500V I D = 12A I G = 10mA 8 6 o TJ = 25 C 20 4 10 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 50 VSD - Volts Fig. 11. Capacitance 150 200 Fig. 12. Forward-Bias Safe Operating Area 100 100,000 RDS(on) Limit f = 1 MHz 25µs Ciss 10,000 100µs 10 1,000 Coss 100 Crss I D - Amperes Capacitance - PicoFarads 100 QG - NanoCoulombs 1 1ms o TJ = 150 C o TC = 25 C Single Pulse 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFR24N100Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance aaaaa 0.3 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_24N100Q3(R8) 10-12-11 IXFR24N100Q3 ISOPLUS247 (IXFR) Outline 1 = Gate 2,4 = Drain 3 = Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFR24N100Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved