IXFR32N100Q3

IXFR32N100Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr D (Electrically Isolated Tab) = =   1000V 23A 350m 300ns G N-Channel Enhancement Mode Fast Intrinsic Rectifier S ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 23 A IDM TC = 25C, Pulse Width Limited by TJM 96 A IA EAS TC = 25C TC = 25C 32 2 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 50 V/ns PD TC = 25C 570 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force G 20..120/4.5..27 N/lb. 5 g Weight Isolated Tab S G = Gate S = Source D = Drain Features     2500 V D    Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Low Intrinsic Gate Resistance 2500V~ Electrical Isolation Fast Intrinsic Rectifier Avalanche Rated Low Package Inductance Advantages    Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) Characteristic Values Min. Typ. Max. 1000 3.5 V 6.5 V 200 nA TJ = 125C VGS = 10V, ID = 16A, Note 1 © 2020 IXYS CORPORATION, All Rights Reserved 50 A 2 mA High Power Density Easy to Mount Space Savings Applications      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 350 m DS100366B(1/20) IXFR32N100Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 16A, Note 1 20 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 32 S 10.9 nF 745 pF 67 pF Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 0.20 Qgs  45 ns 15 ns 54 ns 12 ns 195 nC 60 nC 78 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 16A RG = 1 (External) Qg(on)  VGS = 10V, VDS = 0.5 • VDSS, ID = 16A Qgd RthJC 0.22C/W RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 32 A Repetitive, Pulse Width Limited by TJM 128 A IF = IS, VGS = 0V, Note 1 1.4 V IF = 16A, -di/dt = 100A/s 1.2 12.3 VR = 100V, VGS = 0V 300 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR32N100Q3 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 32 70 V GS = 10V 28 24 8V 50 20 I D - Amperes I D - Amperes VGS = 10V 60 16 7V 12 8V 40 30 7V 20 8 4 10 6V 6V 0 0 0 1 2 3 4 5 6 7 8 9 10 11 0 5 10 15 32 3.4 VGS = 10V 28 30 VGS = 10V 3.0 RDS(on) - Normalized 24 7V I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 16A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 20 16 12 6V 8 2.6 I D = 32A 2.2 I D = 16A 1.8 1.4 1.0 4 0.6 5V 0 0.2 0 2.8 5 10 15 20 25 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 16A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 25 VGS = 10V 2.6 o TJ = 125 C 2.4 20 2.2 I D - Amperes R DS(on) - Normalized 20 VDS - Volts VDS - Volts 2.0 1.8 1.6 15 10 o TJ = 25 C 1.4 1.2 5 1.0 0.8 0 0 10 20 30 40 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 50 60 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFR32N100Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 50 VDS = 20V 45 50 o TJ = - 40 C VDS = 20V 40 o TJ = 125 C 40 o 25 C o - 40 C 30 o g f s - Siemens I D - Amperes 35 25 20 25 C 30 o 125 C 20 15 10 10 5 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 5 10 15 20 VGS - Volts 30 35 40 45 50 55 60 200 220 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 100 10 90 9 80 8 70 7 60 6 VGS - Volts I S - Amperes 25 50 40 VDS = 500V I D = 16A I G = 10mA 5 4 o TJ = 125 C 30 3 o TJ = 25 C 20 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 20 40 V SD - Volts 60 80 100 120 140 160 180 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 100 RDS(on) Limit f = 1 MHz 10,000 10 I D - Amperes Capacitance - PicoFarads 100µs Ciss Coss 1,000 1 100 o TJ = 150 C o TC = 25 C Single Pulse Crss 10 1ms 0.1 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 1,000 V DS - Volts 10,000 IXFR32N100Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance AAAAA 0.3 Z (th )JC - K / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_32N100Q3(Q8-R44) 10-10-12 IXFR32N100Q3 ISOPLUS247 (IXFR) Outline 1 = Gate 2,4 = Drain 3 = Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFR32N100Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved