IXFR44N50Q3

IXFR44N50Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr D (Electrically Isolated Tab) = =   500V 25A 154m 250ns G N-Channel Enhancement Mode Fast Intrinsic Rectifier S ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 25 A IDM TC = 25C, Pulse Width Limited by TJM 130 A IA EAS TC = 25C TC = 25C 44 1.5 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 50 V/ns PD TC = 25C 300 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force 2500 V 20..120/4.5..27 N/lb. 5 g Weight G D Isolated Tab S G = Gate S = Source D = Drain Features        Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Low Intrinsic Gate Resistance 2500V~ Electrical Isolation Fast Intrinsic Rectifier Avalanche Rated Low Package Inductance Advantages    Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) V 6.5 V 100 nA TJ = 125C VGS = 10V, ID = 22A, Note 1 © 2019 IXYS CORPORATION, All Rights Reserved 25 A 1 mA High Power Density Easy to Mount Space Savings Applications      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 154 m DS100382B(12/19) IXFR44N50Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 22A, Note 1 17 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 • VDSS, ID = 22A RG = 2 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 22A Qgd 28 S 4800 pF 625 pF 56 pF 0.13   30 ns 13 ns 37 ns 9 ns 93 nC 34 nC 44 nC 0.41 C/W RthJC RthCS C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Note Characteristic Values Min. Typ. Max. 44 A Repetitive, Pulse Width Limited by TJM 176 A IF = IS, VGS = 0V, Note 1 1.4 V 250 ns IF = 22A, -di/dt = 100A/s VR = 100V, VGS = 0V 13.2 A 1.4 µC 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR44N50Q3 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 45 100 VGS = 10V 9V 35 80 70 I D - Amperes 30 I D - Amperes VGS = 10V 90 40 25 8V 20 15 60 9V 50 40 30 10 8V 20 7V 5 10 6V 0 0 1 2 3 4 7V 0 5 6 7 0 5 10 3.4 VGS = 10V 40 25 VGS = 10V 3.0 RDS(on) - Normalized 8V 35 30 I D - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 22A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 45 15 VDS - Volts VDS - Volts 25 20 7V 15 2.6 I D = 44A 2.2 I D = 22A 1.8 1.4 1.0 10 0.6 6V 5 5V 0 0 3.4 2 4 6 8 10 0.2 12 14 16 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 22A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 30 V GS = 10V 3.0 25 o 2.6 20 I D - Amperes R DS(on) - Normalized TJ = 125 C 2.2 o TJ = 25 C 1.8 15 10 1.4 5 1.0 0.6 0 0 10 20 30 40 50 60 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 70 80 90 100 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFR44N50Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 70 50 o TJ = - 40 C 45 60 o 25 C 40 o 125 C 35 g f s - Siemens I D - Amperes 50 40 o 30 TJ = 125 C o 25 C o - 40 C 20 30 25 20 15 10 10 5 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 0 10 20 30 VGS - Volts 60 70 16 VDS = 250V 14 120 I D = 22A I G = 10mA 12 VGS - Volts 100 I S - Amperes 50 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 140 80 60 o TJ = 125 C 40 10 8 6 4 o TJ = 25 C 20 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 10 20 30 VSD - Volts 40 50 60 70 80 90 100 110 120 130 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 10,000 1000 RDS(on) Limit C iss 100 1,000 I D - Amperes Capacitance - PicoFarads 40 I D - Amperes C oss 25µs 100µs 10 100 1 o TJ = 150 C o C rss 1ms TC = 25 C Single Pulse f = 1 MHz 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFR44N50Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th )JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: F_44N50Q3(Q7)9-09-11 IXFR44N50Q3 ISOPLUS247 (IXFR) Outline 1 = Gate 2,4 = Drain 3 = Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFR44N50Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2019 IXYS CORPORATION, All Rights Reserved