IXFR48N60Q3

IXFR48N60Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr D (Electrically Isolated Tab) 600V 32A 154m 300ns G N-Channel Enhancement Mode Fast Intrinsic Rectifier S ISOPLUS247 E153432 Symbol Test Conditions VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM Maximum Ratings IA EAS 32 A 120 A TC = 25C TC = 25C 48 2 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 50 V/ns PD TC = 25C 500 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C TJ TJM Tstg G Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force 2500 V N/lb. 5 g Weight        Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V V 6.5 V 200 nA TJ = 125C VGS = 10V, ID = 24A, Note 1 © 2020 IXYS CORPORATION, All Rights Reserved 25 A 1 mA D = Drain Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Low Intrinsic Gate Resistance 2500V~ Electrical Isolation Fast Intrinsic Rectifier Avalanche Rated Low Package Inductance Advantages  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Isolated Tab S Features  20..120/4.5..27 D G = Gate S = Source  TL TSOLD RDS(on) = =   High Power Density Easy to Mount Space Savings Applications      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 154 m DS100349A(1/20) IXFR48N60Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 24A, Note 1 20 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 36 S 7020 pF 790 pF 70 pF Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 0.13 Qgs  37 ns 11 ns 40 ns 9 ns 140 nC 54 nC 60 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 24A RG = 1 (External) Qg(on)  VGS = 10V, VDS = 0.5 • VDSS, ID = 24A Qgd RthJC 0.25C/W RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 48 A Repetitive, Pulse Width Limited by TJM 192 A IF = IS, VGS = 0V, Note 1 1.4 V IF = 24A, -di/dt = 100A/s 2.2 15.4 VR = 100V, VGS = 0V 300 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR48N60Q3 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 50 VGS = 10V VGS = 10V 100 40 80 I D - Amperes I D - Amperes 9V 30 20 8V 9V 60 40 8V 10 20 7V 7V 6V 0 0 1 2 3 4 0 5 6 0 7 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 24A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 50 3.4 VGS = 10V 8V VGS = 10V 3.0 RDS(on) - Normalized I D - Amperes 40 30 20 7V 2.6 2.2 I D = 48A 1.8 I D = 24A 1.4 1.0 10 0.6 6V 5V 0 0 3.0 2 4 6 8 10 14 16 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 24A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature VGS = 10V 125 150 125 150 35 o TJ = 125 C 2.6 30 25 2.2 I D - Amperes R DS(on) - Normalized 0.2 12 1.8 o TJ = 25 C 20 15 1.4 10 1.0 5 0 0.6 0 10 20 30 40 50 60 70 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 80 90 100 110 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFR48N60Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 80 70 70 60 o TJ = - 40 C 50 g f s - Siemens I D - Amperes 60 50 o 40 TJ = 125 C o 25 C o - 40 C 30 o 25 C 40 o 125 C 30 20 20 10 10 0 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 0 10 20 VGS - Volts 40 50 60 70 80 I D - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 160 16 140 14 120 12 100 10 VGS - Volts I S - Amperes 30 80 60 VDS = 300V I D = 24A I G = 10mA 8 6 o TJ = 125 C 40 4 o TJ = 25 C 20 2 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 50 VSD - Volts 100 150 200 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 RDS(on) Limit Ciss 10,000 100 I D - Amperes Capacitance - PicoFarads f = 1 MHz Coss 1,000 100µs 10 1ms Crss 100 25µs 1 o TJ = 150 C o TC = 25 C Single Pulse 10ms 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 V DS - Volts 1,000 IXFR48N60Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_48N60Q3(R8) 6-22-11 IXFR48N60Q3 ISOPLUS247 (IXFR) Outline 1 = Gate 2,4 = Drain 3 = Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFR48N60Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. 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