IXFR64N50Q3

IXFR64N50Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr D (Electrically Isolated Tab) = =   500V 45A 94m 250ns G N-Channel Enhancement Mode Fast Intrinsic Rectifier S ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 45 A IDM TC = 25C, Pulse Width Limited by TJM 160 A IA TC = 25C 64 A EAS TC = 25C 4 J dv/dt IS  IDM, VDD  VDSS, TJ  150C 50 V/ns PD TC = 25C 500 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force 2500 V 20..120/4.5..27 N/lb. 5 g Weight G D Isolated Tab S G = Gate S = Source D = Drain Features        Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Low Intrinsic Gate Resistance 2500V~ Electrical Isolation Fast Intrinsic Rectifier Avalanche Rated Low Package Inductance Advantages    Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) V 6.5 V 200 nA TJ = 125C VGS = 10V, ID = 32A, Note 1 © 2019 IXYS CORPORATION, All Rights Reserved 50 A 2 mA High Power Density Easy to Mount Space Savings Applications      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 94 m DS100347A(12/19) IXFR64N50Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 32A, Note 1 25 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 42 S 6950 pF 937 pF 93 pF Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 0.13 Qgs  36 ns 11 ns 46 ns 9 ns 145 nC 50 nC 67 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 32A RG = 1 (External) Qg(on)  VGS = 10V, VDS = 0.5 • VDSS, ID = 32A Qgd RthJC 0.25C/W RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 64 A Repetitive, Pulse Width Limited by TJM 256 A IF = IS, VGS = 0V, Note 1 1.4 V IF = 32A, -di/dt = 100A/s 1.54 14 VR = 100V, VGS = 0V 250 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR64N50Q3 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC V GS = 10V 9V 60 140 V GS = 10V 120 50 40 I D - Amperes I D - Amperes 9V 100 8V 30 80 60 8V 20 40 7V 10 7V 20 6V 6V 0 0 0 1 2 3 4 5 0 6 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 32A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 3.4 V GS = 10V 8V 60 VGS = 10V 3.0 50 2.6 RDS(on) - Normalized I D - Amperes 20 VDS - Volts VDS - Volts 40 7V 30 20 I D = 64A 2.2 I D = 32A 1.8 1.4 1.0 6V 10 0.6 5V 0 0.2 0 3.0 2 4 6 8 10 12 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 32A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 50 VGS = 10V 45 o TJ = 125 C 40 35 2.2 1.8 o TJ = 25 C 1.4 I D - Amperes R DS(on) - Normalized 2.6 30 25 20 15 10 1.0 5 0 0.6 0 20 40 60 80 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 100 120 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFR64N50Q3 Fig. 8. Transconductance Fig. 7. Input Admittance 100 80 90 o TJ = - 40 C 70 80 60 o g f s - Siemens I D - Amperes 70 60 50 o TJ = 125 C 40 o 25 C 30 o 125 C 40 30 20 o 20 25 C 50 - 40 C 10 10 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 0 10 20 30 VGS - Volts 40 50 60 70 80 90 100 I D - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 200 16 180 14 160 VDS = 250V I D = 32A I G = 10mA 12 120 VGS - Volts I S - Amperes 140 100 80 o TJ = 125 C 10 8 6 60 4 o TJ = 25 C 40 2 20 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 50 VSD - Volts 100 150 200 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 RDS(on) Limit Ciss 10,000 100 25µs I D - Amperes Capacitance - PicoFarads f = 1 MHz 1,000 Coss 100µs 10 100 o TJ = 150 C Crss o TC = 25 C Single Pulse 10 1ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFR64N50Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds © 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: F_80N50Q3(Q8) 6-20-11 IXFR64N50Q3 ISOPLUS247 (IXFR) Outline 1 = Gate 2,4 = Drain 3 = Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFR64N50Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2019 IXYS CORPORATION, All Rights Reserved