IXFR64N60Q3

IXFR64N60Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr D (Electrically Isolated Tab) = =   600V 42A 104m 300ns G N-Channel Enhancement Mode Fast Intrinsic Rectifier S ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 42 A IDM TC = 25C, Pulse Width Limited by TJM 250 A IA EAS TC = 25C TC = 25C 64 3 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 50 V/ns PD TC = 25C 568 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force 2500 V 20..120/4.5..27 N/lb. 5 g Weight G D Isolated Tab S G = Gate S = Source D = Drain Features        Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Low Intrinsic Gate Resistance 2500V~ Electrical Isolation Fast Intrinsic Rectifier Avalanche Rated Low Package Inductance Advantages    Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) V 6.5 V 200 nA TJ = 125C VGS = 10V, ID = 32A, Note 1 © 2020 IXYS CORPORATION, All Rights Reserved 50 A 1.5 mA High Power Density Easy to Mount Space Savings Applications      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 104 m DS100351A(1/20) IXFR64N60Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 32A, Note 1 26 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 36 S 9930 pF 1090 pF 90 pF Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 0.13 Qgs  45 ns 15 ns 50 ns 11 ns 190 nC 67 nC 78 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 32A RG = 1 (External) Qg(on)  VGS = 10V, VDS = 0.5 • VDSS, ID = 32A Qgd RthJC 0.22C/W RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 64 A Repetitive, Pulse Width Limited by TJM 256 A IF = IS, VGS = 0V, Note 1 1.4 V IF = 32A, -di/dt = 100A/s 2.1 16.6 VR = 100V, VGS = 0V 300 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR64N60Q3 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC VGS = 10V 9V 60 V GS = 10V 9V 140 120 50 8V I D - Amperes I D - Amperes 100 40 30 80 8V 60 7V 20 40 7V 10 20 6V 6V 0 0 0 1 2 3 4 5 6 0 7 10 15 20 25 30 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125oC Fig. 4. RDS(on) Normalized to ID = 32A Value vs. Junction Temperature 3.4 VGS = 10V 8V 60 VGS = 10V 3.0 RDS(on) - Normalized 50 7V I D - Amperes 5 VDS - Volts 40 30 20 6V 2.6 I D = 64A 2.2 I D = 32A 1.8 1.4 1.0 10 0.6 5V 0 0.2 0 3.0 2 4 6 8 10 12 14 16 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 32A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 50 o VGS = 10V TJ = 125 C 2.6 40 2.2 I D - Amperes R DS(on) - Normalized -25 VDS - Volts 1.8 o TJ = 25 C 30 20 1.4 10 1.0 0 0.6 0 20 40 60 80 100 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 120 140 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFR64N60Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 80 70 o TJ = - 40 C 70 60 o 60 25 C 50 40 g f s - Siemens I D - Amperes 50 o TJ = 125 C o 25 C o 30 - 40 C o 125 C 40 30 20 20 10 10 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0 8.5 10 20 30 40 VGS - Volts 60 70 80 90 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 16 200 VDS = 300V 14 160 I D = 32A I G = 10mA 12 120 V GS - Volts I S - Amperes 50 I D - Amperes 80 o 10 8 6 TJ = 125 C 4 o TJ = 25 C 40 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 50 VSD - Volts 150 200 250 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 RDS(on) Limit f = 1 MHz 25µs C iss 100 10,000 I D - Amperes Capacitance - PicoFarads 100 C oss 1,000 C rss 100 100µs 10 1 o TJ = 150 C 1ms o TC = 25 C Single Pulse 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFR64N60Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_64N60Q3(Q8) 6-21-11 IXFR64N60Q3 ISOPLUS247 (IXFR) Outline 1 = Gate 2,4 = Drain 3 = Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFR64N60Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved