IXFR80N50Q3

IXFR80N50Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) trr D (Electrically Isolated Tab) = =   500V 50A 72m 250ns G N-Channel Enhancement Mode Fast Intrinsic Rectifier S ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA EAS 50 A 240 A TC = 25C TC = 25C 80 5 A J dv/dt IS  IDM, VDD  VDSS, TJ  150C 50 V/ns PD TC = 25C 570 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force 2500 V 20..120/4.5..27 N/lb. 5 g Weight G D Isolated Tab S G = Gate S = Source D = Drain Features        Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Low Intrinsic Gate Resistance 2500V~ Electrical Isolation Fast Intrinsic Rectifier Avalanche Rated Low Package Inductance Advantages    Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 500 VGS(th) VDS = VGS, ID = 8mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 40A, Note 1 Applications V 6.5 V    200 nA TJ = 125C © 2019 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings 50 A 2 mA   DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 72 m DS100323B(12/19) IXFR80N50Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 40A, Note 1 35 55 S 10 nF 1260 pF 115 pF Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 0.15 Qgs  30 ns 20 ns 43 ns 15 ns 200 nC 77 nC 90 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 40A RG = 1 (External) Qg(on)  VGS = 10V, VDS = 0.5 • VDSS, ID = 40A Qgd RthJC 0.22C/W RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 80 A Repetitive, Pulse Width Limited by TJM 320 A IF = IS, VGS = 0V, Note 1 1.4 V IF = 40A, -di/dt = 100A/s 1.8 15.6 VR = 100V, VGS = 0V 250 ns C A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR80N50Q3 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 80 180 V GS = 10V V GS = 10V 160 70 120 50 I D - Amperes I D - Amperes 140 9V 60 40 30 8V 9V 100 80 60 20 40 10 8V 20 7V 7V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5.0 5 10 15 3.4 80 VGS = 10V 9V 50 RDS(on) - Normalized I D - Amperes 30 8V 40 30 20 V GS = 10V 3.0 60 2.6 I D = 80A 2.2 I D = 40A 1.8 1.4 1.0 7V 10 0.6 6V 0 0.2 0 2 4 6 8 10 12 -50 -25 0 VDS - Volts VGS = 10V 2.8 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Drain Current 3.0 60 o TJ = 125 C 50 2.6 2.4 40 2.2 I D - Amperes R DS(on) - Normalized 25 Fig. 4. RDS(on) Normalized to ID = 40A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 70 20 VDS - Volts VDS - Volts 2.0 1.8 1.6 30 20 1.4 o TJ = 25 C 1.2 10 1.0 0.8 0 0 20 40 60 80 100 120 I D - Amperes © 2019 IXYS CORPORATION, All Rights Reserved 140 160 180 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFR80N50Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 120 100 o TJ = - 40 C 100 80 o o TJ = 125 C o 25 C o - 40 C 60 25 C g f s - Siemens I D - Amperes 80 60 o 125 C 40 40 20 20 0 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 0 20 40 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 80 100 120 Fig. 10. Gate Charge 240 16 VDS = 250V 14 200 I D = 40A I G = 10mA 12 160 VGS - Volts I S - Amperes 60 I D - Amperes 120 80 10 8 6 o TJ = 125 C 4 o TJ = 25 C 40 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 40 80 VSD - Volts Fig. 11. Capacitance 160 200 240 280 Fig. 12. Forward-Bias Safe Operating Area 100,000 1000 f = 1 MHz RDS(on) Limit Ciss 10,000 100 I D - Amperes Capacitance - PicoFarads 120 QG - NanoCoulombs 1,000 Coss 100 100µs 10 1 o TJ = 150 C C rss o TC = 25 C Single Pulse 10 1ms 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFR80N50Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance aaaaa 0.3 Z(th)JC - K / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2019 IXYS CORPORATION, All Rights Reserved IXYS REF: F_80N50Q3(Q8) 6-20-11-C IXFR80N50Q3 ISOPLUS247 (IXFR) Outline 1 = Gate 2,4 = Drain 3 = Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFR80N50Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2019 IXYS CORPORATION, All Rights Reserved