IXFR80N60P3

IXFR80N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Fast Intrinsic Rectifier = =   600V 48A  85m 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C, RGS = 1M 600 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 48 A IDM TC = 25C, Pulse Width Limited by TJM 200 A IA EAS TC = 25C TC = 25C 40 2 A J dv/dt IS 35 V/ns PD TC = 25C 540 W -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C  2500 V   IDM, VDD  VDSS, TJ  150C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force 20..120/4.5..27 N/lb 5 g Weight G D Isolated Tab S G = Gate S = Source D = Drain Features          Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Low Intrinsic Gate Resistance 2500V~ Electrical Isolation Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance Advantages   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 40A, Note 1  V 5.0 V 200 nA TJ = 125C 50 A 4 mA 85 m Applications       © 2014 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications DS100357B(04/14) IXFR80N60P3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 55 VDS = 10V, ID = 40A, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf Qgs 90 S 13.1 nF 1240 pF 5.0 pF 1.0  48 ns 25 ns 87 ns 8 ns 190 nC 56 nC 48 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 40A RG = 1 (External) Qg(on) ISOPLUS247 (IXFR) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 40A Qgd RthJC 0.23C/W RthCS 0.15C/W 1 = Gate 2,4 = Drain 3 = Source Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 80 A Repetitive, Pulse Width Limited by TJM 320 A IF = IS , VGS = 0V, Note 1 1.5 V IF = 40A, -di/dt = 100A/s 1.4 VR = 100V, VGS = 0V 13.0 250 ns  μC A 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR80N60P3 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 180 80 VGS = 10V 7V 70 140 60 7V 120 6V 50 I D - Amperes I D - Amperes VGS = 10V 8V 160 40 30 100 80 60 20 6V 40 10 20 5V 5V 0 0 0 1 2 3 4 5 0 6 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 40A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 80 VGS = 10V 7V 70 20 VDS - Volts VDS - Volts VGS = 10V 3.0 2.6 6V RDS(on) - Normalized I D - Amperes 60 50 40 30 5V I D = 80A 2.2 I D = 40A 1.8 1.4 1.0 20 0.6 10 4V 0 0.2 0 2 4 6 8 10 12 14 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 50 2.8 VGS = 10V 2.6 TJ = 125ºC 40 2.4 2.2 I D - Amperes RDS(on) - Normalized -25 VDS - Volts 2.0 1.8 1.6 30 20 1.4 TJ = 25ºC 10 1.2 1.0 0.8 0 0 20 40 60 80 100 120 I D - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 140 160 180 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFR80N60P3 Fig. 7. Input Admittance Fig. 8. Transconductance 120 160 TJ = - 40ºC 140 100 TJ = 125ºC 25ºC - 40ºC 120 g f s - Siemens I D - Amperes 80 60 25ºC 100 125ºC 80 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 20 40 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 80 100 120 Fig. 10. Gate Charge 240 10 VDS = 300V 9 I D = 40A 200 8 I G = 10mA 7 160 VGS - Volts I S - Amperes 60 I D - Amperes 120 80 TJ = 125ºC 6 5 4 3 TJ = 25ºC 40 2 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 20 40 VSD - Volts 80 100 120 140 160 180 200 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000 100,000 f = 1 MHz Ciss RDS(on) Limit 10,000 25µs 100 I D - Amperes Capacitance - PicoFarads 60 1,000 Coss 100 100µs 10 10 TJ = 150ºC Crss TC = 25ºC Single Pulse 1ms 1 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFR80N60P3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width - Seconds © 2014 IXYS CORPORATION, All Rights Reserved IXYS REF: F_80N60P3(W9) 3-10-11 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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