IXFT120N15P

PolarHTTM HiPerFET Power MOSFET IXFH 120N15P IXFT 120N15P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150 V V VDSS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25° C 120 A IL(RMS) External lead current limit 75 A IDM TC = 25° C, pulse width limited by TJM 260 A IAR TC = 25° C 60 A EAR TC = 25° C 60 mJ EAS TC = 25° C 2.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD TC = 25° C 600 W -55 ... +175 175 -55 ... +150 °C °C °C 300 260 °C °C TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic case for 10 s Md Mounting torque Weight TO-247 TO-268 (TO-3P) 1.13/10 Nm/lb.in. 6.0 5.0 g g G S G = Gate S = Source l l VGS(th) VDS = VGS, ID = 4 mA 3.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % V 5.0 V ±100 nA 25 500 µA µA 16 mΩ l l TJ = 175° C International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect l 150 D = Drain TAB = Drain Features Advantages VGS = 0 V, ID = 250 µA S D (TAB) Characteristic Values Min. Typ. Max. BVDSS © 2006 IXYS All rights reserved D (TAB) D TO-268 (IXFT) l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) 150 V 120 A 16 m Ω 200 ns TO-247 (IXFH) G TJ TJM Tstg = = ≤ ≤ Easy to mount Space savings High power density DS99210E(12/05) IXFH 120N15P IXFT 120N15P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 40 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 60 S 4900 pF 1300 pF 330 pF Crss td(on) 33 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A 42 ns td(off) RG = 4 Ω (External) 85 ns 26 ns 150 nC 40 nC 80 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 0.25° C/W RthJC RthCS TO-247 (IXFH) Outline (TO-3P) ° C/W 0.21 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 120 A ISM Repetitive 260 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr QRM IRM IF = 25 A, -di/dt = 100 A/µs VR = 100 V, VGS = 0 V 600 6 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXFT) Outline 200 ns nC Α Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFH 120N15P IXFT 120N15P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 280 120 VGS = 10V 9V 200 8V 80 60 I D - Amperes I D - Amperes 100 VGS = 10V 240 7V 40 9V 160 8V 120 80 7V 6V 20 40 5V 0 0.5 1 1.5 6V 0 0 2 0 2.5 1 2 3 Fig. 3. Output Characteristics @ 150ºC 6 7 8 9 10 2.8 VGS = 10V 9V 100 2.6 R D S ( o n ) - Normalized 80 7V 60 6V 40 20 VGS = 10V 2.4 8V I D - Amperes 5 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 120 2.2 2 I D = 120A 1.8 1.6 I D = 60A 1.4 1.2 1 5V 0.8 0 0.6 0 1 2 3 V D S - Volts 4 -50 5 -25 Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current 0 25 50 75 100 125 TJ - Degrees Centigrade 150 175 Fig. 6. Drain Current vs. Case Tem perature 90 4 External Lead Current Limit 80 TJ = 175ºC 3.5 70 3 2.5 VGS = 10V 2 VGS = 15V 1.5 I D - Amperes R D S ( o n ) - Normalized 4 V D S - Volts V D S - Volts 60 50 40 30 20 1 TJ = 25ºC 10 0 0.5 0 30 60 90 120 150 180 210 240 270 300 I D - Amperes © 2006 IXYS All rights reserved -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXFH 120N15P IXFT 120N15P Fig. 8. Transconductance Fig. 7. Input Adm ittance 90 210 80 180 70 g f s - Siemens I D - Amperes 150 120 90 60 TJ = 150ºC 30 -40ºC 25ºC 60 50 TJ = -40ºC 40 25ºC 30 150ºC 20 10 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 0 9 30 60 90 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 150 180 210 240 270 Fig. 10. Gate Charge 10 300 VDS = 75V 9 250 I D = 60A 8 I G = 10mA 7 200 VG S - Volts I S - Amperes 120 I D - Amperes 150 100 6 5 4 3 TJ = 150ºC 2 50 TJ = 25ºC 1 0 0 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 V S D - Volts 20 40 60 80 100 120 140 160 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 10,000 1000 R DS(on) Limit Ciss I D - Amperes Capacitance - picoFarads TJ = 175ºC TC = 25ºC 1,000 Coss 25µs 100 100µs 1ms 10ms Crss f = 1MHz DC 100 10 0 5 10 15 20 25 V DS - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 1000 IXFH 120N15P IXFT 120N15P F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e R( t h ) J C - ºC / W 1.00 0.10 0.01 0.1 1 10 Pu ls e W id th - m illis e c o n d s © 2006 IXYS All rights reserved 100 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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