IXFT120N30X3HV

Advance Technical Information IXFT120N30X3HV IXFH120N30X3 X3-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) = =  300V 120A  11.0m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M 300 V VGSS Continuous 20 V VGSM Transient 30 V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 120 280 A A IA TC = 25C 60 A EAS TC = 25C 2 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns PD TC = 25C 735 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 1.13 / 10 Nm/lb.in 4 6 g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-268HV TO-247 S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages   Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 300 VGS(th) VDS = VGS, ID = 4mA 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V  V 4.5 Applications V  100 nA  RDS(on) 25 A 1 mA TJ = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2017 IXYS CORPORATION, All Rights Reserved 8.6 11.0 m High Power Density Easy to Mount Space Savings    Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100865A(11/17) IXFT120N30X3HV IXFH120N30X3 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 60A, Note 1 60 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 100 S 1.7  10.5 nF 1376 pF 3 pF 530 2100 pF pF 30 ns 30 ns 130 ns 14 ns 170 nC 50 nC 50 nC Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.17 C/W RthJC RthCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max IS VGS = 0V 120 A ISM Repetitive, pulse Width Limited by TJM 480 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 60A, -di/dt = 100A/μs 145 930 13 VR = 100V ns nC A Note 1. Pulse test, t  300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFT120N30X3HV IXFH120N30X3 o o Fig. 2. Extended Output Characteristics @ TJ = 25 C Fig. 1. Output Characteristics @ TJ = 25 C 500 120 VGS = 10V 9V 400 350 7V 80 I D - Amperes I D - Amperes 100 VGS = 10V 450 8V 60 6V 40 8V 300 250 7V 200 150 6V 100 20 5V 50 0 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 0 5 10 VDS - Volts 20 25 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 60A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 120 3.0 VGS = 10V 8V 100 RDS(on) - Normalized 6V 60 VGS = 10V 2.6 7V 80 I D - Amperes 15 40 5V 20 2.2 I D = 120A 1.8 I D = 60A 1.4 1.0 0.6 4V 0.2 0 0 0.5 1 1.5 2 2.5 -50 3 -25 0 25 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 60A Value vs. Drain Current 4.5 4.0 75 125 150 BVDSS BVDSS / VGS(th) - Normalized 1.1 o TJ = 125 C 3.0 2.5 2.0 o TJ = 25 C 1.5 100 Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.2 VGS = 10V 3.5 RDS(on) - Normalized 50 TJ - Degrees Centigrade 1.0 0.9 0.8 VGS(th) 0.7 1.0 0.6 0.5 0 50 100 150 200 250 300 350 I D - Amperes © 2017 IXYS CORPORATION, All Rights Reserved 400 450 500 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFT120N30X3HV IXFH120N30X3 Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 180 140 160 120 VDS = 10V 140 120 I D - Amperes I D - Amperes 100 80 60 100 80 o TJ = 125 C 60 o 40 25 C 40 20 o - 40 C 20 0 0 -50 -25 0 25 50 75 100 125 3.0 150 3.5 4.0 4.5 TC - Degrees Centigrade 5.0 5.5 6.0 6.5 7.0 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 200 400 o TJ = - 40 C 180 VDS = 10V 350 160 300 o 25 C I S - Amperes g f s - Siemens 140 120 o 100 125 C 80 250 200 150 o TJ = 125 C 60 100 40 o TJ = 25 C 50 20 0 0 0 20 40 60 80 100 120 140 160 180 0.2 200 0.4 0.6 0.8 1.2 1.4 1.6 Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 9 VDS = 150V Capacitance - PicoFarads I D = 60A 8 I G = 10mA 7 VGS - Volts 1.0 VSD - Volts I D - Amperes 6 5 4 3 10,000 Ciss 1,000 Coss 100 C rss 10 2 f = 1 MHz 1 1 0 0 20 40 60 80 100 120 140 160 180 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1,000 IXFT120N30X3HV IXFH120N30X3 Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 1000 24 RDS(on) Limit 20 25μs 16 I D - Amperes E OSS - MicroJoules 100 12 100μs 10 8 1 o o TC = 25 C Single Pulse 0 1 1ms TJ = 150 C 4 0 50 100 150 200 Fig. 15. Maximum Transient0.1 Thermal Impedance 250 300 1 10ms DC 10 100 1,000 VDS - Volts VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.3 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2017 IXYS CORPORATION, All Rights Reserved IXYS REF: F_120N30X3 (27-S301) 11-07-17 IXFT120N30X3HV IXFH120N30X3 TO-268HV Outline PINS: 1 - Gate 2 - Source 3 - Drain TO-247 Outline D A A2 A2 Q + R A 0P O + 0K M D B M B E S D2 + D1 D 0P1 1 2 3 4 ixys option L1 C E1 L A1 c b b2 b4 e + J M C AM O PINS: 1 - Gate 2, 4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.