IXFT14N100

HiPerFETTM Power MOSFETs VDSS ID25 RDS(on) IXFH/IXFT/IXFX14N100 1000 V 14 A 0.75 W IXFH/IXFT/IXFX15N100 1000 V 15 A 0.70 W trr £ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR TC = 25°C dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TJM Tstg TL Md A A A A A A 45 mJ 5 V/ns 360 W -55 ... +150 °C 150 -55 ... +150 °C °C 300 °C 1.6 mm (0.062 in.) from case for 10 s Mounting torque Symbol Test Conditions VDSS VGS = 0 V, ID = 1 mA 1000 VGS(th) VDS = VGS, ID = 4 mA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Nm/lb.in. 6 g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 25°C TJ = 125°C 14N100 15N100 Pulse test, t £ 300 ms, duty cycle d £ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 1.13/10 (TAB) V V 14 15 56 60 14 15 TC = 25°C O Weight 14N100 15N100 14N100 15N100 14N100 15N100 BS O TC = 25°C TJ V V LE T ±20 ±30 EAR PD 1000 1000 TO-247 AD (IXFH) E Symbol V 4.5 V ±100 nA 250 1 mA mA 0.75 0.70 W W PLUS 247TM (IXFX) (TAB) G D TO-268 (D3) (IXFT) G S (TAB) Features ● International standard packages ● Low RDS (on) HDMOSTM process ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic Rectifier Applications ● DC-DC converters ● Battery chargers ● Switched-mode and resonant-mode power supplies ● DC choppers ● AC motor control ● Temperature and lighting controls Advantages ● Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) or mounting clip or spring (PLUS 247TM) ● High power surface mountable package ● High power density 97535B (1/99) 1-4 IXFH14N100 IXFH15N100 Test Conditions gfs VDS = 10 V; ID = 0.5 • ID25, pulse test Ciss Coss Crss td(on) tr td(off) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 6 VGS = 0 V, VDS = 25 V, f = 1 MHz VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 W (External), tf RthJC RthCK VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM QRM pF pF pF 27 30 120 ns ns ns 30 ns A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 220 30 85 nC nC nC C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 K/W K/W G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 14N100 15N100 14 15 A A 14N100 15N100 56 60 A A IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V 200 350 ns ns mC mC A A IF = IS -di/dt = 100 A/ms, VR = 100 V O IRM 4500 430 150 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BS O t rr S 0.25 Source-Drain Diode VSD 10 0.35 (TO-247 Case Style) TO-268AA (D3 PAK) © 2000 IXYS All rights reserved TO-247 AD (IXFH) Outline Dim. Millimeter Min. Max. LE T Qg(on) Qgs Qgd TJ TJ TJ TJ TJ TJ = 25°C = 125°C = 25°C = 125°C = 25°C = 125°C Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 IXFX15N100 IXFX14N100 E Symbol IXFT14N100 IXFT15N100 1 2 10 15 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Inches Min. Max. L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 PLUS247TM (IXFX) Outline Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 Min. Recommended Footprint IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFH14N100 IXFH15N100 12 5V ID - Amperes 16 12 8 4V 8 0 0 4 8 12 16 4V 20 0 4 8 2.0 20 Fig.2 Output characteristics at elevated temperature TJ = 125OC RDS(ON) - Normalized 1.8 LE T 2.2 VGS = 10V 1.6 1.4 1.2 TJ = 25OC BS O RDS(ON) - Normalized 16 E Fig.1 Output Characteristics 0 3 6 9 12 2.0 1.8 1.6 50 75 Fig.4 4 0 -50 150 Temperature Dependence of Drain to Source Resistance 12 ID - Amperes O 8 125 14 IXF_15N100 IXF_14N100 100 TJ - Degrees C 20 12 ID = 7.5A 1.2 Fig.3 RDS(on) vs. Drain Current 16 ID = 15A 1.4 1.0 25 15 VGS = 10V ID - Amperes ID - Amperes 12 VDS - Volts VDS - Volts 0.8 5V 4 4 0 VGS = 9V 8V 7V 6V TJ = 125OC VGS = 9V 8V 7V 6V TJ = 25OC 1.0 IXFX15N100 IXFX14N100 16 20 ID - Amperes IXFT14N100 IXFT15N100 10 8 6 TJ = 125oC 4 TJ = 25oC 2 -25 0 25 50 75 100 125 150 0 2.0 TC - Degrees C Fig.5 Drain Current vs. Case Temperature © 2000 IXYS All rights reserved 2.5 3.0 3.5 4.0 4.5 5.0 VGS - Volts Fig.6 Input admittance 3-4 IXFH14N100 IXFH15N100 12 Capacitance - pF VGS - Volts 8 Ciss 6 4 2 0 40 80 120 160 200 240 2500 Coss 1000 500 Crss 250 100 280 f = 1MHz 0 5 Gate Charge - nC 15 20 25 30 35 40 E Fig.8 Capacitance Curves LE T 40 10 VDS - Volts Fig.7 Gate Charge Characteristic Curve 32 ID - Amperes IXFX15N100 IXFX14N100 5000 V Vds=300V DS = 500V ID=30A = 7.5A IG=10mA = 10mA 10 0 IXFT14N100 IXFT15N100 24 TJ = 125OC 16 8 0 BS O TJ = 25OC 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD - Volts Fig.9 Source current vs Source drain voltage. R(th)JC - K/W O 1 0.1 Single pulse 0.01 10-3 10-2 10-1 100 101 Pulse Width - Seconds Fig.10 Transient Thermal Impedance © 2000 IXYS All rights reserved 4-4