IXFT16N120P

IXFT16N120P IXFH16N120P PolarTM HiPerFETTM Power MOSFETs VDSS ID25 = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 TC = 25°C 16 A IDM TC = 25°C, Pulse Width Limited by TJM 35 A IA TC = 25°C 8 A EAS TC = 25°C 800 mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 660 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 4 6 g g TJ TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-268 TO-247 TO-247 (IXFH) G BVDSS VGS = 0V, ID = 1mA 1200 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2012 IXYS CORPORATION, All Rights Reserved D (Tab) D = Drain Tab = Drain Features z z z z International Standard Packages Fast Recovery Diode Avalanche Rated Low Package Inductance Advantages z z Characteristic Values Min. Typ. Max. S G = Gate S = Source z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) D Easy to Mount Space Savings High Power Density Applications z V 6.5 V ±200 nA 25 μA 2.5 mA z z z z High Voltage Switch-mode and Resonant-Mode Power Supplies High Voltage Pulse Power Applications High Voltage Discharge Circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters 950 mΩ DS99896B(10/12) IXFT16N120P IXFH16N120P Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 11 Ciss 17 S 6900 pF 390 pF 48 pF 1.4 Ω 35 ns VGS = 0V, VDS = 25V, f = 1MHz Coss Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr TO-268 Outline 28 ns td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 66 ns tf RG = 2Ω (External) 35 ns 120 nC 37 nC 47 nC Qg(on) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgs Qgd Terminals: 1 - Gate 3 - Source 2,4 - Drain 0.19 °C/W RthJC RthCS TO-247 °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 16 A ISM Repetitive, Pulse Width Limited by TJM 64 A VSD IF = IS, VGS = 0V, Note 1 1.5 V 300 ns trr IF = 8A, -di/dt = 100A/μs IRM VR = 100V, VGS = 0V QRM 7.5 A 0.75 μC TO-247 Outline 1 2 ∅P 3 e Terminals: 1 - Gate 3 - Source Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFT16N120P IXFH16N120P Fig. 1. Output Characteristics T J = @ 25ºC Fig. 2. Extended Output Characteristics T J = @ 25ºC 16 20 12 7V 10 ID - Amperes ID - Amperes VGS = 10V 8V 24 VGS = 10V 8V 14 8 6 6V 7V 16 12 6V 8 4 4 2 5V 5V 0 0 0 2 4 6 8 10 12 14 16 0 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 8A Value vs. Junction Temperature Fig. 3. Output Characteristics T J = @ 125ºC 16 2.8 VGS = 10V 8V 7V 14 VGS = 10V 2.4 R DS(on) - Normalized 12 ID - Amperes 20 VDS - Volts VDS - Volts 10 6V 8 6 I D = 16A 2.0 I D = 8A 1.6 1.2 4 0.8 2 5V 0 0.4 0 5 10 15 20 25 30 35 -50 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 8A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 2.4 18 16 VGS = 10V 2.2 TJ = 125ºC 14 2.0 12 1.8 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade 1.6 1.4 10 8 6 1.2 4 TJ = 25ºC 1.0 2 0 0.8 0 2 4 6 8 10 12 14 16 ID - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 18 20 22 24 26 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFT16N120P IXFH16N120P Fig. 7. Input Admittance 18 14 16 g f s - Siemens 10 TJ = - 40ºC 14 TJ = 125ºC 25ºC - 40ºC 12 ID - Amperes Fig. 8. Transconductance 16 8 6 4 12 25ºC 10 125ºC 8 6 4 2 2 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 2 4 6 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 12 14 16 Fig. 10. Gate Charge 50 10 45 9 40 8 35 7 VGS - Volts IS - Amperes 8 ID - Amperes 30 25 20 VDS = 600V I D = 8A I G = 10mA 6 5 4 TJ = 125ºC 3 15 TJ = 25ºC 10 2 1 5 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 20 40 VSD - Volts 60 80 100 120 QG - NanoCoulombs Fig. 12. Breakdown and Threshold Voltages vs. Junction Temperature Fig. 11. Capacitance 1.2 100,000 BVDSS & VGS(th) - Normalized Capacitance - PicoFarads f = 1 MHz Ciss 10,000 1,000 Coss 100 1.1 BVDSS 1 0.9 VGS(th) 0.8 Crss 10 0.7 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. -50 -25 0 25 50 75 TJ - Degrees Centigrade 100 125 150 IXFT16N120P IXFH16N120P Fig. 12. Maximum Transient Thermal Impedance 1.00 Fig. 13. Maximum Transient Thermal Impedance aaa 0.30 Z(th)JC - ºC / W 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: F_16N120P(85) 09-12-12-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.