IXFT16N80P

PolarHVTM Power MOSFET VDSS = 800 V ID25 = 16 A Ω RDS(on) ≤ 600 mΩ ≤ 250 ns trr IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 16 A IDM TC = 25°C, pulse width limited by TJM 40 A IAR TC = 25°C 8 A EAR TC = 25°C 30 mJ EAS TC = 25°C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 5 Ω 10 V/ns PD TC = 25°C 460 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque (TO-247) FC Mounting force (PLUS220) Weight TO-247 TO-268 PLUS220 & PLUS220SMD 11..65/2.5..15 N/lb 6.0 5.0 4.0 g g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 μA 800 VGS(th) VDS = VGS, ID = 4 mA 3.0 IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved D S TO-268 (IXFT) G S D (TAB) PLUS220 (IXFV) G D D (TAB) S PLUS220SMD (IXFV...S) 1.13/10 Nm/lb.in. Symbol Test Conditions (TJ = 25°C, unless otherwise specified) RDS(on) G V 5.0 V ±100 nA 25 250 μA μA 600 mΩ G S G = Gate S = Source D (TAB) D = Drain TAB = Drain Features z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density DS99599E(07/06) IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 0.5 ID25, pulse test 16 S 4600 pF 330 pF Crss 23 pF td(on) 27 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 9 tr VGS = 10 V, VDS = VDSS, ID = 0.5 ID25 32 ns td(off) RG = 5 Ω (External) 75 ns tf 29 ns Qg(on) 71 nC 21 nC 23 nC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.27 °C/W RthJC RthCS (TO-247) °C/W 0.21 Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 16 A ISM Repetitive 48 A VSD IF = IS, VGS = 0 V, pulse test 1.5 V trr IF = 25A, -di/dt = 100 A/μs 250 ns IRM VR = 100V; VGS = 0 V 150 QRM 7 A 0.7 μC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 16 24 VGS = 10V 7V 14 VGS = 10V 7V 22 20 18 6V 10 16 ID - Amperes ID - Amperes 12 8 6 6V 14 12 10 8 4 6 5V 4 2 5V 2 0 0 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 VGS = 10V 7V 6V 14 14 16 18 20 VGS = 10V 2.8 2.5 RDS(on) - Normalized 12 ID - Amperes 12 3.1 16 10 8 5V 6 2.2 1.9 I D = 16A 1.6 I D = 8A 1.3 4 1 2 0.7 0 0.4 0 2 4 6 8 10 12 14 16 18 -50 20 -25 VDS - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Fig. RDS(on) Normalized to ID = 8A Value 7. Input Adm ittance vs. Drain Current 50 50 2.6 Fig. 6. Maximum Drain Current vs. Fig. 8. Transconductance Case Temperature 20 45 45 VGS = 10V 2.4 18 TJ = 125ºC 40 40 16 2.2 35 g f s - Siemens 2 ID - Amperes I D - Amperes 10 Fig. 4. RDS(on) Normalized to ID = 8A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC RDS(on) - Normalized 8 VDS - Volts VDS - Volts 30 1.8 25 TJ = 125º C 1.6 20 25º C 1.4 15 -40º C TJ = -40º C 25º C 35 14 125º C 30 12 25 10 20 8 15 6 TJ = 25ºC 1.2 10 10 4 51 2 0 0.8 0 0 4 2 4.54 65 8 10 5.5 12 614 VI DG-SAmperes - Volts © 2006 IXYS All rights reserved 16 6.5 18 20 7 22 7.524 5 0 -50 0 -255 10 0 1525 20 5025 30 75 35 50 100 40 12545 150 TC - Degrees Centigrade I - Amperes D IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS Fig. 8. Transconductance Fig. 7. Input Admittance 28 20 18 24 16 TJ = 125ºC 25ºC - 40ºC 12 20 g f s - Siemens ID - Amperes 14 10 8 6 TJ = - 40ºC 25ºC 125ºC 16 12 8 4 4 2 0 0 3 3.5 4 4.5 5 5.5 0 6 2 4 6 VGS - Volts 8 10 12 14 16 18 20 22 24 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 50 10 45 9 40 8 35 7 VDS = 400V VGS - Volts IS - Amperes I D = 8A 30 25 TJ = 125ºC 20 TJ = 25ºC 15 I G = 10mA 6 5 4 3 10 2 5 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 10 20 VSD - Volts 30 40 50 60 70 80 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Resistance Fig. 11. Capacitance 10,000 1.00 C iss 1,000 R(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz C oss 100 0.10 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. F_16N80P (67) 04-28-06.xls IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS TO-247 AD (IXFH) Outline 1 Dim. 2 3 Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC PLUS220SMD (IXFV_S) Outline © 2006 IXYS All rights reserved TO-268 (IXFT) Outline PLUS220 (IXFV) Outline Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.