IXFT18N100Q3

IXFT18N100Q3 IXFH18N100Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) = 1000V = 18A  660m D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS VGSM Continuous Transient  30  40 V V ID25 TC = 25C 18 A IDM TC = 25C, Pulse Width Limited by TJM 60 A IA TC = 25C 18 A EAS TC = 25C 1.5 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 830 W -55 ... +150  C TJM 150  C Tstg -55 ... +150  C TJ TO-247 (IXFH) G Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-268 TO-247 300 260 °C °C 1.13 / 10 Nm/lb.in. 4.0 6.0 g g S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features  TL TSOLD D     Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1000 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) T J = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2020 IXYS CORPORATION, All Rights Reserved  V 6.5 V           100 nA 25 A 1.25 mA 660 m High Power Density Easy to Mount Space Savings Applications      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS100390A(1/20) IXFT18N100Q3 IXFH18N100Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 9 Ciss Coss 16 S 4890 pF 400 pF 34 pF VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr Gate Input Resistance 0.20   37 Resistive Switching Times ns 32 ns td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 40 ns tf RG = 3 (External) 13 ns 90 nC 33 nC 37 nC Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.15 C/W RthJC RthCS TO-247 C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 18 A ISM Repetitive, Pulse Width Limited by TJM 72 A VSD IF = IS, VGS = 0V, Note 1 1.4 V 300 ns trr IRM QRM Note IF = 9A, -di/dt = 100A/s VR = 100V, VGS = 0V 11.0 A 1.5 µC 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFT18N100Q3 IXFH18N100Q3 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 40 18 V GS = 10V 16 14 8V I D - Amperes I D - Amperes 12 10 8 6 4 35 VGS = 10V 30 9V 25 20 8V 15 10 7V 7V 5 2 6V 0 6V 0 0 1 2 3 4 5 6 7 8 9 10 11 0 5 10 15 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 9A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 18 3.4 V GS = 10V 16 VGS = 10V 3.0 RDS(on) - Normalized 14 7V 12 I D - Amperes 20 10 8 6 4 2.6 2.2 I D = 18A I D = 9A 1.8 1.4 1.0 6V 0.6 2 5V 0 0.2 0 2.8 2 4 6 8 10 12 14 18 20 22 24 26 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 9A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 20 VGS = 10V 2.6 18 o TJ = 125 C 2.4 16 14 2.2 I D - Amperes RDS(on) - Normalized 16 2.0 1.8 1.6 1.4 12 10 8 6 o TJ = 25 C 1.2 4 1.0 2 0.8 0 0 4 8 12 16 20 24 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 28 32 36 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFT18N100Q3 IXFH18N100Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 35 40 VDS = 20V 30 30 g f s - Siemens 25 I D - Amperes o TJ = - 40 C VDS = 20V 35 20 15 o TJ = 125 C o 25 C 10 o - 40 C o 25 C 25 20 o 125 C 15 10 5 5 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 5 10 15 VGS - Volts 25 30 35 Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 16 60 VDS = 500V 14 50 I D = 9A I G = 10mA 12 V GS - Volts 40 I S - Amperes 20 I D - Amperes 30 o TJ = 125 C 20 10 8 6 4 o TJ = 25 C 10 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 10 20 30 VSD - Volts 40 50 60 70 80 90 100 110 120 130 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100 10,000 RDS(on) Limit 25µs 10 1,000 100µs I D - Amperes Capacitance - PicoFarads Ciss Coss 100 1 o TJ = 150 C o 1ms TC = 25 C Single Pulse Crss f = 1 MHz 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFT18N100Q3 IXFH18N100Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13 Maximum Transient Thermal Impedance sdasd 0.4 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_18N100Q3(Q7) 9-28-11 IXFT18N100Q3 IXFH18N100Q3 TO-268 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFT18N100Q3 IXFH18N100Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved