IXFT20N100P

PolarTM Power MOSFET HiPerFETTM IXFH20N100P IXFT20N100P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1000V 20A Ω 570mΩ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 20 A IDM TC = 25°C, pulse width limited by TJM 50 A IAR TC = 25°C 10 A EAS TC = 25°C 800 mJ dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 660 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ = = ≤ ≤ TL Maximum lead temperature for soldering 300 °C TSOLD Plastic body for 10s 260 °C Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. Weight TO-247 TO-268 6 5 g g TAB TO-268 (IXFT) G S G = Gate S = Source TAB D = Drain TAB = Drain Features z z z z International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 1000 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) V 6.5 V ± 200 nA z Applications: z z 25 μA 1.5 mA TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2008 IXYS CORPORATION, All rights reserved 470 570 mΩ Easy to mount Space savings High power density z z z Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor controls Robotics and servo controls DS99843B(04/08) IXFH20N100P IXFT20N100P Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 8 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate input resistance td(on) TO-247 (IXFH) Outline 14 S 7300 pF 456 pF 55 pF 1.20 Ω 40 ns tr Resistive Switching Times 37 ns td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 56 ns tf RG = 2Ω (External) 45 ns 126 nC 50 nC 55 nC Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.19 °C/W RthJC RthCS °C/W (TO-247) 0.21 Source-Drain Diode TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 20 A ISM Repetitive, pulse width limited by TJM 80 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 10A, -di/dt = 100A/μs 300 ns QRM VR = 100V, VGS = 0V IRM 0.9 μC 9.0 A ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH20N100P IXFT20N100P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 20 40 VGS = 10V 8V 18 VGS = 10V 35 16 ID - Amperes ID - Amperes 9V 30 14 7V 12 10 8 25 20 8V 15 6 10 6V 4 7V 5 2 0 0 0 1 2 3 4 5 6 7 8 9 10 11 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 10A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 20 3.0 VGS = 10V 9V 18 2.8 VGS = 10V 2.6 8V 14 ID - Amperes RDS(on) - Normalized 16 12 10 8 7V 6 2.4 2.2 2.0 I D = 20A 1.8 1.6 I D = 10A 1.4 1.2 1.0 4 0.8 6V 2 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 10A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 22 2.6 VGS = 10V 2.4 20 TJ = 125ºC 18 16 2 ID - Amperes RDS(on) - Normalized 2.2 1.8 1.6 1.4 14 12 10 8 6 1.2 4 TJ = 25ºC 1 2 0.8 0 0 5 10 15 20 25 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 30 35 40 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFH20N100P IXFT20N100P Fig. 7. Input Admittance Fig. 8. Transconductance 35 32 30 28 TJ = - 40ºC 24 g f s - Siemens ID - Amperes 25 20 TJ = 125ºC 25ºC - 40ºC 15 10 25ºC 20 16 125ºC 12 8 5 4 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 5 10 15 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 25 30 35 Fig. 10. Gate Charge 16 60 VDS = 500V 14 I D = 10A 50 I G = 10mA 12 VGS - Volts 40 IS - Amperes 20 ID - Amperes 30 10 8 6 20 TJ = 25ºC 4 TJ = 125ºC 10 2 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 20 40 VSD - Volts 60 80 100 120 140 160 180 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.00 Ciss 10,000 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1MHz Coss 0.10 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_20N100P (85) 04-01-08-B Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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