IXFT23N80Q

HiPerFETTM Power MOSFETs IXFH23N80Q IXFT23N80Q VDSS = 800 V = 23 A ID25 RDS(on) = 0.42 Ω Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient ±30 ±40 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 23 92 23 A A A EAR EAS TC = 25°C TC = 25°C 45 1.5 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C TJ TJM Tstg 500 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque TO-247 1.13/10 Nm/lb.in. FC Mounting Force TO-268 20...120/4.5...27 N/lb TO-247 TO-268 6 4 TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G S G = Gate S = Source Features z z z z Weight g g z z z Test Conditions VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 3 mA IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 TJ = 25°C TJ = 125°C IXYS advanced low Qg process International standard packages Epoxy meets UL 94 V-0 flammability classification Low RDS (on) low Qg Avalanche energy and current rated Fast intrinsic rectifier Advantages z Symbol TAB = Drain z Easy to mount Space savings High power density V 4.5 V ±100 nA 25 1 µA mA 0.42 Ω DS99060A(02/04) IXFH23N80Q IXFT23N80Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 18 26 S 4900 pF 500 pF 130 pF TO-247 AD (IXFH) Outline 1 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 28 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 27 ns td(off) RG = 1.5 Ω (External), 74 ns 14 ns 130 nC 26 nC 55 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCK 0.25 TO-247 Source-Drain Diode 0.25 Dim. K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 23 A ISM Repetitive; pulse width limited by TJM 92 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 250 ns µC A t rr QRM IRM IF = IS -di/dt = 100 A/µs, VR = 100 V 1 9 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC TO-268 (IXFT) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 22 45 VGS = 10V 7V 6V 18 I D - Amperes 16 40 14 12 10 8 VGS = 10V 35 I D - Amperes 20 5V 6 6V 30 25 5.5V 20 15 5V 10 4 5 4.5V 2 4.5V 0 0 0 1 2 3 4 5 6 7 8 9 0 10 3 6 9 15 18 21 24 27 30 V D S - Volts V D S - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. RDS(on) Norm alize d to 0.5 ID25 Value vs. Junction Te m perature 2.8 22 VGS = 10V 6V 18 16 5V 14 12 10 8 6 VGS = 10V 2.5 R D S ( o n ) - Normalized 20 I D - Amperes 12 4.5V 2.2 1.9 I D = 23A 1.6 I D = 11.5A 1.3 1 4 0.7 2 0.4 0 0 2 4 6 8 10 12 14 16 18 20 -50 22 -25 Fig. 5. RDS(on) Norm alize d to 0.5 ID25 Value vs. ID 2.8 25 50 75 100 125 150 Fig. 6. Drain Curre nt vs . Cas e Tem pe rature 27 24 VGS = 10V 2.4 TJ = 125ºC 21 2.2 I D - Amperes R D S ( o n ) - Normalized 2.6 0 TJ - Degrees Centigrade V D S - Volts 2 1.8 1.6 1.4 18 15 12 9 6 1.2 TJ = 25ºC 1 3 0.8 0 0 5 10 15 20 25 30 I D - Amperes © 2004 IXYS All rights reserved 35 40 45 50 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 Fig. 8. Transconductance Fig. 7. Input Adm ittance 35 60 30 50 g f s - Siemens I D - Amperes 25 20 15 TJ = 125ºC 25ºC -40ºC 10 TJ = -40ºC 25ºC 125ºC 40 30 20 10 5 0 0 3.5 4 4.5 5 5.5 0 6 5 10 15 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 25 30 35 40 Fig. 10. Gate Charge 10 70 9 60 VDS = 400V I D = 11.5A 8 50 I G = 10mA 7 VG S - Volts I S - Amperes 20 I D - Amperes 40 30 TJ = 125ºC 6 5 4 3 20 TJ = 25ºC 2 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 V S D - Volts 1 1.1 1.2 0 20 40 60 80 100 120 140 Q G - nanoCoulombs Fig. 11. Capacitance Capacitance - picoFarads 10000 C iss 1000 C oss 100 C rss f = 1MHz 10 0 5 10 15 20 25 V D S - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 F ig . 1 2 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e R( t h ) J C - ºC / W 1.00 0.10 0.01 1 10 100 Pu ls e W id th - m illis e c o n d s © 2004 IXYS All rights reserved 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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