IXFT30N50P

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS RDS(on) trr = 500 V = 30 A ≤ 200 mΩ Ω ≤ 200 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 500 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 IDM TC = 25° C TC = 25° C, pulse width limited by TJM 30 75 A A IAR EAR EAS TC = 25° C TC = 25° C TC = 25° C 30 40 1.2 A mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 5 Ω 10 V/ns PD TC = 25° C 460 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md FC Mounting torque (TO-247, TO-3P) Mounting force (PLUS220, PLUS220SMD) Weight PLUS220, PLUS220SMD TO-268 TO-247 Symbol 1.13/10 Nm/lb.in 11 65/2.5 15 N/lb. 4 5 6 Test Conditions (TJ = 25° C, unless otherwise specified) g g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 500 VGS(th) VDS = VGS, ID = 4 mA 3.0 IGSS VGS = ±30 V, VDS = 0 V ±100 nA IDSS VDS = VDSS VGS = 0 V 25 750 µA µA RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % 200 mΩ © 2006 IXYS All rights reserved V 5.0 TJ = 125° C 165 V D (TAB) TO-268 (IXFT) G S D (TAB) PLUS220 (IXFV) G D S D (TAB) PLUS220 SMD(IXFV..S) G S G = Gate S = Source D (TAB) D = Drain TAB = Drain Features l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density DS99414E(04/06) IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 20 V; ID = 0.5 ID25, pulse test 17 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 27 S 4150 pF 445 pF Crss 28 pF td(on) 25 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 24 ns td(off) RG = 5 Ω (External) 82 ns tf 24 ns Qg(on) 70 nC 27 nC 22 nC VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgs Qgd 0.27° C/W RthJC RthCs (TO-247, PLUS220) ° C/W 0.21 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 30 A ISM Repetitive 90 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = 25 A; -di/dt = 100 A/µs 200 ns IRM VR = 100 V; VGS = 0 V QRM 6 A 0.6 µC Characteristic Curves Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 30 70 VGS = 10V VGS = 10V 27 8V 24 50 7V I D - Amperes 21 I D - Amperes 8V 60 18 15 12 9 6V 7V 40 30 20 6 10 3 0 6V 0 0 1 2 3 4 5 6 7 0 3 6 9 V D S - Volts 12 15 18 21 24 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 27 30 IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS Fig. 3. Output Characteristics Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature @ 125ºC 30 3.4 VGS = 10V 27 R D S ( o n ) - Normalized I D - Amperes 24 VGS = 10V 3.1 8V 7V 21 18 6V 15 12 9 6 5V 3 2.8 2.5 2.2 I D = 30A 1.9 1.6 I D = 15A 1.3 1 0.7 0 0.4 0 2 4 6 8 10 12 14 -50 -25 0 V D S - Volts Fig. 5. RDS(on) Norm alized to 3.4 75 100 125 150 35 VGS = 10V 3.1 TJ = 125º C 30 2.8 25 2.5 I D - Amperes R D S ( o n ) - Normalized 50 Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 2.2 1.9 1.6 20 15 10 1.3 TJ = 25º C 5 1 0.7 0 0 10 20 30 40 50 60 70 80 -50 -25 I D - Amperes 55 45 50 40 45 g f s - Siemens 60 50 35 30 TJ = 125º C 20 25º C 15 25 50 75 100 125 150 Fig. 8. Transconductance 55 25 0 TC - Degrees Centigrade Fig. 7. Input Adm ittance I D - Amperes 25 TJ - Degrees Centigrade -40º C TJ = -40º C 40 25º C 35 125º C 30 25 20 15 10 10 5 5 0 0 3.5 4 4.5 5 5.5 V G S - Volts © 2006 IXYS All rights reserved 6 6.5 7 7.5 0 5 10 15 20 25 30 35 I D - Amperes 40 45 50 55 IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS Fig. 10. Gate Charge 90 10 80 9 VDS = 250V 70 8 I D = 15A 7 I G = 10mA 60 VG S - Volts I S - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 50 40 TJ = 125º C 30 5 4 3 TJ = 25º C 20 6 2 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 10 20 V S D - Volts 30 40 50 60 70 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 10000 100 C iss 1000 I D - Amperes Capacitance - picoFarads R DS(on) Limit C oss 25µs 100µs 10 1ms 100 C rs 10ms DC TJ = 150ºC TC = 25ºC f = 1MHz 10 1 0 5 10 15 20 25 30 35 40 10 100 V D S - Volts 1000 V D S - Volts Fig. 13. M axim um Tr ans ie nt The r m al Re s is tance R ( t h ) J C - ºC / W 1.00 0.10 0.01 0.1 1 10 Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. 100 1000 IXFH 30N50P IXFT 30N50P IXFV 30N50P IXFV 30N50PS Package Outline Drawings TO-247 (IXFH) Outline 1 2 3 Terminals: 1 - Gate 3 - Source Dim. TO-268 (IXFT) Outline Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC PLUS220SMD (IXFV_S) Outline © 2006 IXYS All rights reserved PLUS220 (IXFV) Outline Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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