IXFT340N075T2

IXFH340N075T2 IXFT340N075T2 TrenchT2TM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 75V = 340A  3.2m TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C 75 V VDGR TJ = 25C to 175C, RGS = 1M 75 V VGSM Transient  20 V ID25 TC = 25C (Chip Capability) 340 A ILRMS Lead Current Limit, RMS 160 A IDM TC = 25C, Pulse Width Limited by TJM 850 A IA TC = 25C 170 A EAS TC = 25C 960 mJ PD TC = 25C 935 W -55 ... +175  C TJM 175  C Tstg -55 ... +175  C TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10 seconds Md Mounting Torque (TO-247) Weight TO-247 TO-268 300 260 °C °C 1.13/10 Nm/lb.in. 6 4 g g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 75 VGS(th) VDS = VGS, ID = 3mA 2.0 IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 100A, Note 1 © 2021 Littelfuse, Inc. TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features  International Standard Packages 175°C Operating Temperature  High Current Handling Capability  Avalanche Rated  Fast Intrinsic Diode  Low RDS(on)  Advantages  V 4.0 V           200 nA 25 A 1.5mA 3.2 m   Easy to Mount Space Savings High Power Density Applications    DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications DS100194A(5/21) IXFH340N075T2 IXFT340N075T2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 65 VDS = 10V, ID = 60A, Note 1 110 S Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 100A td(off) 19 nF 2230 pF 490 pF 1.7  26 ns 50 ns 60 ns 35 ns 300 nC 68 nC 70 nC RG = 1 (External) tf Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.16 C/W RthJC RthCH TO-247 0.21  C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IF = 170A, VGS = 0V IRM QRM -di/dt = 100A/s VR = 37.5V 340 A 1360 A 1.3 V 75 ns 4.4 A 165 nC Note 1. Pulse test, t  300s; duty cycle, d  2%. Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405 B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 7,063,975 B2 6,771,478 B2 7,071,537 7,157,338B2 IXFH340N075T2 IXFT340N075T2 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 350 400 VGS = 15V 10V 9V 8V 300 350 7V 300 7V 200 I D - Amperes I D - Amperes 250 6V 150 250 6V 200 150 5V 5V 100 100 50 50 4V 0 4V 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. RDS(on) Normalized to ID = 170A Value vs. Junction Temperature 4.5 2.4 350 VGS = 15V 10V 9V 8V VGS = 10V 2.2 2.0 250 7V 200 6V RDS(on) - Normalized 300 I D - Amperes VGS = 15V 10V 8V 150 5V 100 I D = 340A 1.8 1.6 I D = 170A 1.4 1.2 1.0 50 0.8 4V 0.6 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 2.0 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 170A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 2.4 180 2.2 160 External Lead Current Limit 140 TJ = 175ºC 1.8 120 1.6 I D - Amperes RDS(on) - Normalized 2.0 VGS = 10V 15V 1.4 1.2 100 80 60 TJ = 25ºC 1.0 40 0.8 20 0.6 0 40 80 120 160 200 I D - Amperes © 2021 Littelfuse, Inc. 240 280 320 360 0 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFH340N075T2 IXFT340N075T2 Fig. 7. Input Admittance Fig. 8. Transconductance 240 200 TJ = - 40ºC 180 200 160 g f s - Siemens I D - Amperes 140 120 100 80 TJ = 150ºC 25ºC - 40ºC 60 40 25ºC 160 150ºC 120 80 40 20 0 2.5 3.0 3.5 4.0 4.5 5.0 0 5.5 0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 220 Fig. 10. Gate Charge 10 300 V DS = 37.5V I D = 170A I G = 10mA 9 250 8 7 VGS - Volts 200 I S - Amperes 100 I D - Amperes 150 TJ = 150ºC 100 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 50 VSD - Volts 150 200 250 300 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1,000 100,000 RDS(on) Limit f = 1 MHz 25µs Ciss 10,000 Coss 1,000 External Lead Current Limit 100 100µs I D - Amperes Capacitance - PicoFarads 100 100ms DC 10 TJ = 175ºC 10ms TC = 25ºC Single Pulse Crss 100 1ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts Littelfuse reserves the right to change limits, test conditions, and dimensions. 1 10 VDS - Volts 100 IXFH340N075T2 IXFT340N075T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 70 70 RG = 1Ω , VGS = 10V VDS = 37.5V 65 RG = 1Ω , V GS = 10V V DS = 37.5V 65 t r - Nanoseconds t r - Nanoseconds TJ = 125ºC 60 I D = 200A 55 50 I D = 100A 60 55 50 TJ = 25ºC 45 45 40 40 25 35 45 55 65 75 85 95 105 115 100 125 110 120 130 140 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 90 350 I D = 200A 80 45 70 40 60 200 50 I D = 100A 150 40 8 9 10 11 12 13 14 50 25 15 35 45 55 RG - Ohms 85 80 36 70 65 TJ = 25ºC, 125ºC 28 60 24 55 20 50 120 130 140 150 160 ID - Amperes © 2021 Littelfuse, Inc. 95 105 115 125 170 180 190 200 400 450 tf 400 TJ = 125ºC , VGS = 10V VDS = 37.5V td(off) 360 320 350 280 300 240 250 200 I D = 200A 200 160 I D = 100A 150 120 100 80 50 40 0 0 1 2 3 4 5 6 7 8 9 RG - Ohms 10 11 12 13 14 15 t d(off) - Nanoseconds 75 t d(off) - Nanoseconds t f - Nanoseconds td(off) 40 110 85 500 t f - Nanoseconds tf RG = 1Ω , VGS = 10V V DS = 37.5V 100 75 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 48 32 65 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 44 70 I D = 100A, 200A 55 10 7 75 60 10 6 80 20 15 5 85 RG = 1Ω , VGS = 10V VDS = 37.5V 65 20 0 td(off) 25 50 4 200 90 tf 30 30 3 190 35 100 2 180 t d(off) - Nanoseconds 250 1 170 50 t d(on) - Nanoseconds 300 t r - Nanoseconds td(on) TJ = 125ºC , VGS = 10V VDS = 37.5V 160 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature t f - Nanoseconds 400 tr 150 I D - Amperes IXFH340N075T2 IXFT340N075T2 Fig. 19. Maximum Transient Thermal Impedance 1.00 Fig. 19. Maximum Transient Thermal Impedance afaf 0.20 Z (th)JC - K / W 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_340N075T2 (V8) 5-18-21 IXFH340N075T2 IXFT340N075T2 TO-268 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2021 Littelfuse, Inc.