IXFT44N50P

IXFT44N50P IXFH44N50P IXFK44N50P PolarTM HiperFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 500V = 44A   140m TO-268 (IXFT) G S D (Tab) TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C, RGS = 1M 500 V VGSS VGSM Continuous Transient  30  40 V V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA 44 A 110 A TC = 25C 44 A EAS TC = 25C 1.7 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 10 V/ns PD TC = 25C 658 W -55 ... +150  C TJM 150  C Tstg -55 ... +150  C TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-247& TO-264) Weight TO-268 TO-247 TO-264 G D S D (Tab) TO-264 (IXFK) G D S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features 300 260 °C °C 1.13/10 Nm/lb.in  4 6 10 g g g     International Standard Packages Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 500 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125C   V 5.0 V           100 nA 25 A 500 μA 140 m  Applications      © 2014 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99366F(04/14) IXFT44N50P Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 20 Ciss S 5440 pF 639 pF 40 pF 28 ns 29 ns 85 ns 27 ns 98 nC 35 nC 30 nC Crss td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 3 (External) tf Qg(on) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgs TO-247 Outline 32 VGS = 0V, VDS = 25V, f = 1MHz Coss Qgd RthJC RthCS TO-247 0.19 C/W 0.21C/W RthCS TO-264 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr Characteristic Values Min. Typ. Max. 44 A Repetitive, Pulse Width Limited by TJM 110 A IF = IS, VGS = 0V, Note 1 1.5 V 200 ns IF = 25A, -di/dt = 100A/s IRM VR = 100V, VGS = 0V QRM Note IXFH44N50P IXFK44N50P 6.0 A 0.6 μC 1 2 e Terminals: 1 - Gate 3 - Source Dim. 2 - Drain Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-264 AA Outline 1. Pulse test, t  300s, duty cycle, d  2%. Terminals: 1 - Gate 2 - Drain 3 - Source TO-268 Outline Terminals: 1 - Gate 3 - Source P 3 Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S 2,4 - Drain Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFT44N50P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ TJ = 25ºC @ TJ = 25ºC 45 100 VGS = 10V 7V 40 VGS = 10V 8V 90 80 35 70 30 25 ID - Amperes ID - Amperes IXFH44N50P IXFK44N50P 6V 20 15 7V 60 50 40 6V 30 10 20 5V 5 10 0 5V 0 0 1 2 3 4 5 6 7 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 22A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 45 3.2 VGS = 10V 7V 40 V GS = 10V 2.8 RDS(on) - Normalized ID - Amperes 35 6V 30 25 20 15 5V 2.4 2 I D = 44A I D = 22A 1.6 1.2 10 0.8 5 0 0.4 0 2 4 6 8 10 12 14 16 -50 -25 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 22A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 50 3.2 V GS = 10V 45 2.8 40 TJ = 125ºC 35 2.4 ID - Amperes RDS(on) - Normalized 0 2.0 1.6 30 25 20 15 10 TJ = 25ºC 1.2 5 0 0.8 0 10 20 30 40 50 60 I D - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 70 80 90 100 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXFT44N50P IXFH44N50P IXFK44N50P Fig. 8. Transconductance Fig. 7. Input Admittance 60 60 50 g f s - Siemens ID - Amperes 50 40 30 TJ = 125ºC 25ºC - 40ºC 20 TJ = - 40ºC 25ºC 125ºC 40 30 20 10 10 0 0 3.5 4 4.5 5 5.5 6 6.5 0 10 20 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 40 50 60 70 Fig. 10. Gate Charge 10 140 VDS = 250V 9 120 I D = 22A 8 100 I G = 10mA 7 VGS - Volts IS - Amperes 30 I D - Amperes 80 TJ = 125ºC 60 TJ = 25ºC 40 6 5 4 3 2 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 10 20 VSD - Volts 30 40 50 60 70 80 90 100 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000 10,000 RDS(on) Limit 1,000 ID - Amperes Capacitance - PicoFarads TJ = 150ºC TC = 25ºC C iss C oss 100 25µs 100µs 10 100 1ms DC 10ms C rss f = 1 MHz 1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1000 IXFT44N50P IXFH44N50P IXFK44N50P Fig. 13. Maximum Transient Thermal Resistance Z(th)JC - ºC / W 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2014 IXYS CORPORATION, All Rights Reserved IXYS REF: F_44N50P(8J) 03-21-06-*B Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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