IXFT50N30Q3

IXFT50N30Q3 IXFH50N30Q3 Q3-Class HiperFETTM Power MOSFET VDSS ID25 RDS(on) = 300V = 50A  80m D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M 300 V VGSS VGSM Continuous Transient  20  30 V V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA 50 A 150 A TC = 25C 50 A EAS TC = 25C 1.5 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 690 W -55 ... +150  C TJM 150  C Tstg -55 ... +150  C TJ TO-247 (IXFH) G Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque (TO-247) Weight TO-268 TO-247 300 260 °C °C 1.13 / 10 Nm/lb.in. 4.0 6.0 g g S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features  TL TSOLD D     Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages   Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 300 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) T J = 125C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2020 IXYS CORPORATION, All Rights Reserved  V 6.5 V           100 nA 10 A 500  µA 80 m High Power Density Easy to Mount Space Savings Applications      DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls DS100336A(1/20) IXFT50N30Q3 IXFH50N30Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 19 Ciss Coss 29 S 3160 pF 600 pF 60 pF VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 0.17 VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2 (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd ns 15 ns 24 ns 9 ns 65 nC 22 nC 32 nC 0.18 C/W RthJC RthCS  14 Qg(on) Qgs  TO-247 C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Note Characteristic Values Min. Typ. Max. 50 A Repetitive, Pulse Width Limited by TJM 200 A IF = IS, VGS = 0V, Note 1 1.4 V 250 ns IF = 25A, -di/dt = 100A/s VR = 100V, VGS = 0V 11.8 A 940 nC 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFT50N30Q3 IXFH50N30Q3 Fig. 2. Extended Output Characteristics @ TJ = 25oC Fig. 1. Output Characteristics @ TJ = 25oC 50 90 V GS = 10V V GS = 10V 45 80 40 70 9V 9.5V 60 I D - Amperes I D - Amperes 35 30 25 8.5V 20 50 9V 40 30 15 8.5V 8V 20 10 5 8V 10 7V 0 7V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 10 15 50 3.4 V GS = 10V 30 V GS = 10V 3.0 40 RDS(on) - Normalized 9V 35 I D - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 25A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125oC 45 20 VDS - Volts VDS - Volts 30 25 8V 20 15 5 2.2 I D = 50A 1.8 I D = 25A 1.4 1.0 7V 10 2.6 0.6 6V 0 0.2 0 3.0 1 2 3 4 5 6 7 8 9 -50 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 25A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 50 VGS = 10V 2.8 -25 VDS - Volts 40 2.4 o 2.2 TJ = 125 C I D - Amperes RDS(on) - Normalized 2.6 2.0 1.8 1.6 30 20 1.4 1.2 10 o TJ = 25 C 1.0 0 0.8 0 10 20 30 40 I D - Amperes © 2020 IXYS CORPORATION, All Rights Reserved 50 60 70 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFT50N30Q3 IXFH50N30Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 50 55 o VDS = 20V 50 45 40 g f s - Siemens 40 I D - Amperes TJ = - 40 C VDS = 20V 45 35 o TJ = 125 C 30 o 25 C 25 o - 40 C 20 o 35 25 C 30 125 C o 25 20 15 15 10 10 5 5 0 0 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 0 10 5 10 15 20 VGS - Volts 30 35 40 45 50 55 Fig. 10. Gate Charge 16 140 14 120 12 100 10 VGS - Volts I S - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 160 80 60 25 I D - Amperes o VDS = 150V I D = 25A I G = 10mA 8 6 TJ = 125 C 40 4 o TJ = 25 C 20 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 10 20 VSD - Volts 40 50 60 70 80 90 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000 10000 RDS(on) Limit Ciss 1000 25µs 100 I D - Amperes Capacitance - PicoFarads 30 Coss 100 100µs 10 o TJ = 150 C Crss o TC = 25 C Single Pulse f = 1 MHz 10 1ms 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFT50N30Q3 IXFH50N30Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - K / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2020 IXYS CORPORATION, All Rights Reserved IXYS REF: F_50N30Q3(Q6)05-12-11 IXFT50N30Q3 IXFH50N30Q3 TO-268 Outline 1 - Gate 2,4 - Drain 3 - Source TO-247 Outline 1 - Gate 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFT50N30Q3 IXFH50N30Q3 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. © 2020 IXYS CORPORATION, All Rights Reserved