IXFT60N65X2HV

IXFT60N65X2HV X2-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 650V = 60A  52m  TO-268HV (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 60 A IDM TC = 25C, Pulse Width Limited by TJM 120 A IA TC = 25C 15 A EAS TC = 25C 2.5 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD 780 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 °C °C 4 g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Weight D = Drain Tab = Drain Features   TC = 25C TJ G = Gate S = Source   High Voltage Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages    High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 650 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1  V   5.0 V 100 nA TJ = 125C © 2016 IXYS CORPORATION, All Rights Reserved   Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 25 A 2.5 mA 52 m DS100693A(03/16) IXFT60N65X2HV Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 23 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 38 S 0.8  6300 pF 3540 pF 1.7 pF 207 855 pF pF 30 ns 23 ns 63 ns 12 ns 108 nC 40 nC 34 nC Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.16 C/W RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 60 A Repetitive, pulse Width Limited by TJM 240 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 30A, -di/dt = 100A/μs 180 1.4 16.0 ns μC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFT60N65X2HV Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 160 60 VGS = 10V 9V VGS = 10V 140 50 9V 8V 120 I D - Amperes I D - Amperes 40 7V 30 100 8V 80 60 20 40 6V 7V 10 20 5V 0 6V 0 0 0.5 1 1.5 2 2.5 3 0 3.5 5 10 15 VDS - Volts 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 60 3.4 VGS = 10V 8V VGS = 10V 3.0 50 I D - Amperes RDS(on) - Normalized 2.6 40 7V 30 6V 20 I D = 60A 2.2 1.8 I D = 30A 1.4 1.0 10 0.6 5V 0 0.2 0 1 2 3 4 5 6 7 8 -50 -25 0 25 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 30A Value vs. Drain Current 4.5 75 100 125 150 Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 VGS = 10V 1.2 BVDSS / VGS(th) - Normalized 4.0 3.5 R DS(on) - Normalized 50 TJ - Degrees Centigrade T J = 125ºC 3.0 2.5 2.0 T J = 25ºC 1.5 1.0 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.6 0.5 0.5 0 20 40 60 80 100 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 120 140 160 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFT60N65X2HV Fig. 8. Input Admittance Fig. 7. Maxing Drain Current vs. Case Temperature 70 90 80 60 70 50 - Amperes 40 TJ = 125ºC 25ºC - 40ºC 50 40 I I D 30 D - Amperes 60 30 20 20 10 10 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4 4.5 5 5.5 TC - Degrees Centigrade 6 6.5 7 7.5 8 VGS - Volts Fig. 9. Transconductance Fig. 10. Forward Voltage Drop of Intrinsic Diode 70 200 TJ = - 40ºC 180 60 160 25ºC - Amperes 40 140 125ºC S 30 120 100 80 I g f s - Siemens 50 TJ = 125ºC 60 20 40 TJ = 25ºC 10 20 0 0 0 10 20 30 40 I 50 60 70 80 0.3 90 0.4 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 V SD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 VDS = 325V 9 Capacitance - PicoFarads I D = 30A 8 I G = 10mA 7 V GS - Volts 0.5 D - Amperes 6 5 4 3 Ciss 10,000 1,000 Coss 100 10 2 f = 1 MHz 1 Crss 1 0 0 10 20 30 40 50 60 70 80 90 100 110 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFT60N65X2HV Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 45 1000 40 RDS(on) Limit 100 25µs 30 I D - Amperes EOSS - MicroJoules 35 25 20 100µs 10 15 1 10 TJ = 150ºC TC = 25ºC Single Pulse 5 0 0 100 200 1 300 400 1ms Fig. 15. Maximum Transient0.1Thermal Impedance 500 600 10 100 VDS - Volts 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.3 Z (th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: F_60N65X2(X7-S602) 11-19-15 IXFT60N65X2HV TO-268HV Outline PINS: 1 - Gate 2 - Source 3 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.