IXFT80N65X2HV

IXFT80N65X2HV X2-Class HiPerFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 650V = 80A  38m  TO-268HV (IXFT) G S Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 650 V VDGR TJ = 25C to 150C, RGS = 1M 650 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 80 A IDM TC = 25C, Pulse Width Limited by TJM 160 A D (Tab) IA TC = 25C 20 A EAS TC = 25C 3 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 50 V/ns PD TC = 25C 890 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 °C °C TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Weight 4 g G = Gate S = Source D = Drain Tab = Drain Features     High Voltage Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages    High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 650 VGS(th) VDS = VGS, ID = 4mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1  V 5.0 V     100 nA TJ = 125C © 2016 IXYS CORPORATION, All Rights Reserved Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls 50 A 3 mA 38 m DS100694A(03/16) IXFT80N65X2HV Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max gfs VDS = 10V, ID = 0.5 • ID25, Note 1 33 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 55 S 0.6  8300 pF 5010 pF 1.6 pF 280 1160 pF pF 32 ns 24 ns 70 ns 11 ns 140 nC 50 nC 40 nC Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.14 C/W RthJC Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max 80 A Repetitive, pulse Width Limited by TJM 320 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr QRM IRM IF = 40A, -di/dt = 100A/μs 200 1.7 16.7 ns μC A 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 VR = 100V Note 1. Pulse test, t  300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFT80N65X2HV Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 200 80 VGS = 10V VGS = 10V 9V 70 180 160 8V 60 9V I D - Amperes I D - Amperes 140 50 7V 40 30 8V 120 100 7V 80 60 20 6V 40 10 6V 20 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 5 10 VDS - Volts 20 25 Fig. 4. RDS(on) Normalized to ID = 40A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 80 3.8 VGS = 10V 8V 70 VGS = 10V 3.4 3.0 RDS(on) - Normalized 60 I D - Amperes 15 VDS - Volts 7V 50 40 6V 30 20 2.6 I D = 80A 2.2 1.8 I D = 40A 1.4 1.0 5V 10 0.6 4V 0.2 0 0 1 2 3 4 5 6 7 -50 8 0 25 50 75 100 125 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 40A Value vs. Drain Current Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 4.5 150 1.3 VGS = 10V 1.2 BV DSS / V GS(th) - Normalized 4.0 3.5 R DS(on) - Normalized -25 VDS - Volts TJ = 125ºC 3.0 2.5 2.0 TJ = 25ºC 1.5 1.0 BVDSS 1.1 1.0 0.9 0.8 VGS(th) 0.7 0.6 0.5 0.5 0 20 40 60 80 100 120 I D - Amperes © 2016 IXYS CORPORATION, All Rights Reserved 140 160 180 200 -60 -40 -20 0 20 40 60 80 TJ - Degrees Centigrade 100 120 140 160 IXFT80N65X2HV Fig. 7. Maximum Drain Current vs. Case Temperature Fig. 8. Input Admittance 90 100 80 90 70 80 70 I D - Amperes I D - Amperes 60 50 40 TJ = 125ºC 25ºC - 40ºC 60 50 40 30 30 20 20 10 10 0 0 -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 TC - Degrees Centigrade Fig. 9. Transconductance 6.0 6.5 7.0 7.5 Fig. 10. Forward Voltage Drop of Intrinsic Diode 90 200 180 TJ = - 40ºC 80 160 70 140 25ºC 60 I S - Amperes g f s - Siemens 5.5 VGS - Volts 50 125ºC 40 30 120 100 80 TJ = 125ºC 60 20 TJ = 25ºC 40 10 20 0 0 0 10 20 30 40 50 60 70 80 90 100 0.3 0.4 0.5 0.6 0.7 I D - Amperes 0.8 0.9 1.0 1.1 1.2 1.3 VSD - Volts Fig. 12. Capacitance Fig. 11. Gate Charge 100,000 10 VDS = 325V Capacitance - PicoFarads I D = 40A 8 V GS - Volts I G = 10mA 6 4 2 Ciss 10,000 1,000 Coss 100 10 f = 1 MHz 0 Crss 1 0 20 40 60 80 100 120 140 QG - NanoCoulombs IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFT80N65X2HV Fig. 13. Output Capacitance Stored Energy Fig. 14. Forward-Bias Safe Operating Area 60 1000 RDS(on) Limit 50 25µs 40 I D - Amperes E OSS - MicroJoules 100 30 100µs 10 20 1 TJ = 150ºC 10 0 1 0 1ms TC = 25ºC Single Pulse 10ms Fig. 15. Maximum Transient0.1Thermal Impedance 100 200 300 400 500 600 10 100 VDS - Volts 1,000 VDS - Volts Fig. 15. Maximum Transient Thermal Impedance aaaaa 0.3 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2016 IXYS CORPORATION, All Rights Reserved IXYS REF: F_80N65X2(Z8-S602) 11-19-15 IXFT80N65X2HV TO-268HV Outline PINS: 1 - Gate 2 - Source 3 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.