IXFT86N30T

IXFH86N30T IXFT86N30T TrenchTM HiperFETTM Power MOSFET VDSS ID25 = 300V = 86A  46m  RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M 300 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 86 A IDM TC = 25C, Pulse Width Limited by TJM 190 A IA EAS TC = 25C 43 1.5 A J PD TC = 25C 860 W dV/dt IS  IDM, VDD  VDSS, TJ  150°C 20 V/ns -55 to +150 C TJM +150 C Tstg -55 to +150 C TJ  C G D D (Tab) S TO-268 (IXFT) G S D (Tab) G = Gate S = Source D = Drain Tab = Drain Features TL 1.6mm (0.063in) from Case for 10s 300 TSOLD Plastic Body for 10s 260 C  Md Mounting Torque (TO-247) 1.13/10 Nm/lb.in.  Weight TO-247 TO-268 6.0 4.0 g g International Standard Packages Avalanche Rated  High Current Handling Capability  Fast Intrinsic Rectifier  Low RDS(on) Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 300 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25 , Note 1   V 5.0 V 200 nA 25 A 1 mA  Applications    46 m     © 2014 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching DS100208A(03/14) IXFH86N30T IXFT86N30T Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 • ID25, Note 1 60 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3.3 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 100 S 9200 pF 726 pF 22 pF 22 ns 12 ns 60 ns 19 ns 143 nC 53 nC 29 nC 0.145 C/W RthJC RthCS TO-247 (IXFH) Outline TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr IRM QRM IF = 43A, -di/dt = 100A/s, VR = 100V, VGS = 0V 9.80 0.65 86 A 344 A 1.5 V 150 ns A μC 1 2 P 3 e Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXFT) Outline Note 1. Pulse test, t  300s, duty cycle, d 2%. Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH86N30T IXFT86N30T Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 90 200 VGS = 10V 8V 80 160 70 140 I D - Amperes I D - Amperes 7V 7V 60 50 40 6V 30 120 100 6.5V 80 60 20 6V 40 10 20 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. RDS(on) Normalized to ID = 43A Value vs. Junction Temperature 3.0 90 VGS = 10V 7V 80 VGS = 10V 2.6 70 RDS(on) - Normalized 6V 60 I D - Amperes VGS = 10V 8V 180 50 40 5.5V 30 20 2.2 I D = 86A 1.8 I D = 43A 1.4 1.0 5V 0.6 10 4V 0 0.2 0 1 3.4 2 3 4 5 6 7 8 -50 9 25 50 75 100 Fig. 5. RDS(on) Normalized to ID = 43A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 100 125 150 125 150 90 80 TJ = 125ºC 2.6 70 I D - Amperes RDS(on) - Normalized 0 TJ - Degrees Centigrade VGS = 10V 3.0 -25 VDS - Volts 2.2 1.8 60 50 40 30 1.4 TJ = 25ºC 20 1.0 10 0.6 0 0 20 40 60 80 100 120 I D - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 140 160 180 200 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFH86N30T IXFT86N30T Fig. 8. Transconductance Fig. 7. Input Admittance 180 100 TJ = - 40ºC 160 140 TJ = 125ºC 25ºC - 40ºC 60 g f s - Siemens I D - Amperes 80 40 120 25ºC 100 125ºC 80 60 40 20 20 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 10 20 30 40 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 60 70 80 90 100 Fig. 10. Gate Charge 240 10 VDS = 150V 9 200 I D = 43A 8 I G = 10mA 7 160 6 VGS - Volts I S - Amperes 50 I D - Amperes 120 TJ = 125ºC 80 5 4 TJ = 25ºC 3 2 40 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 20 40 VSD - Volts 80 100 120 140 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1000 100,000 f = 1 MHz RDS(on) Limit C iss 100 - Amperes 10,000 C oss 100µs 10 D 1,000 25µs I Capacitance - PicoFarads 60 QG - NanoCoulombs 1ms 1 100 TJ = 150ºC C rss TC = 25ºC Single Pulse 10ms 100m 0.1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 1 10 100 VDS - Volts 1000 IXFH86N30T IXFT86N30T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 24 26 RG = 3.3Ω , VGS = 15V 22 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current RG = 3.3Ω , VGS = 15V 24 VDS = 150V VDS = 150V 22 t r - Nanoseconds t r - Nanoseconds 20 18 I D = 86A 16 I D = 43A 14 12 TJ = 125ºC 20 18 16 14 12 10 TJ = 25ºC 10 8 8 25 35 45 55 65 75 85 95 105 115 40 125 45 50 55 60 Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 200 tr 100 25 tf 23 80 80 40 40 20 0 t f - Nanoseconds t r - Nanoseconds I D = 43A 6 8 10 12 14 16 70 I D = 43A 19 65 17 55 13 25 35 45 55 td(off) - - - - 320 65 TJ = 25ºC 60 16 55 14 50 12 45 70 75 I D - Amperes © 2014 IXYS CORPORATION, All Rights Reserved 80 85 90 t f - Nanoseconds 20 65 85 95 105 115 50 125 500 td(off) - - - - 450 400 VDS = 150V 280 350 240 300 I D = 86A 200 250 I D = 43A 160 200 120 150 80 100 40 50 0 0 2 4 6 8 10 RG - Ohms 12 14 16 18 t d ( o f f ) - Nanoseconds TJ = 125ºC t d ( o f f ) - Nanoseconds 70 60 75 TJ = 125ºC, VGS = 15V 75 22 55 tf 360 80 VDS = 150V 18 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 400 85 RG = 3.3Ω, VGS = 15V 24 60 I D = 86A TJ - Degrees Centigrade tf 26 t f - Nanoseconds 75 21 18 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 50 80 td(off) - - - - RG - Ohms 45 90 15 0 40 85 t d ( o f f ) - Nanoseconds 60 t d ( o n ) - Nanoseconds 120 28 80 VDS = 150V I D = 86A 4 75 RG = 3.3Ω, VGS = 15V VDS = 150V 2 70 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature td(on) - - - - TJ = 125ºC, VGS = 15V 160 65 I D - Amperes TJ - Degrees Centigrade IXFH86N30T IXFT86N30T Fig. 19. Maximum Transient Thermal Impedance 1 Z (th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_86N30T(8W-N32) 3-21-14 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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