IXFT94N30P3

IXFT94N30P3 IXFQ94N30P3 IXFH94N30P3 Polar3TM HiperFETTM Power MOSFET VDSS ID25 = 300V = 94A   36m RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C, RGS = 1M 300 V VGSS VGSM Continuous Transient  20  30 V V ID25 TC = 25C IDM TC = 25C, Pulse Width Limited by TJM IA 94 A 235 A TC = 25C 47 A EAS TC = 25C 2.5 J dv/dt IS  IDM, VDD  VDSS, TJ  150°C 35 V/ns PD TC = 25C 1040 W -55 ... +150  C TJM 150  C Tstg -55 ... +150  C TJ TL TSOLD Maximum Lead Temperature for Soldering Plastic Body for 10s Md Mounting Torque (TO-247 & TO-3P) Weight TO-268 TO-3P TO-247 300 260 °C °C 1.13 / 10 Nm/lb.in 4.0 5.5 6.0 g g g G D S D (Tab) TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features     Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages  Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 300 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125C   V 5.0 V           100 nA Applications  25 A 750 A  36 m    © 2018 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100479B(3/18) IXFT94N30P3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 40 Ciss Coss 68 S 5510 pF 965 pF 25 pF VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr Gate Input Resistance 1.2 Resistive Switching Times   23 ns 19 ns td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 49 ns tf RG = 1 (External) 11 ns 102 nC 33 nC 37 nC Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.12 C/W RthJC RthCS IXFQ94N30P3 IXFH94N30P3 (TO-247 & TO-3P) C/W 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Note Characteristic Values Min. Typ. Max. 94 A Repetitive, Pulse Width Limited by TJM 376 A IF = IS, VGS = 0V, Note 1 1.5 V 250 ns IF = 47A, -di/dt = 100A/s VR = 100V, VGS = 0V 15.6 A 1.4 μC 1. Pulse test, t  300s, duty cycle, d  2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFT94N30P3 o o Fig. 1. Output Characteristics @ TJ = 25 C 100 80 VGS = 10V 8V 200 180 160 60 I D - Amperes 70 I D - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25 C 220 VGS = 10V 8V 7V 90 IXFQ94N30P3 IXFH94N30P3 6V 50 40 30 7V 140 120 100 80 6V 60 20 40 5V 10 5V 20 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 5 10 15 3.4 VGS = 10V 8V 7V 90 25 30 Fig. 4. RDS(on) Normalized to ID = 47A Value vs. Junction Temperature o Fig. 3. Output Characteristics @ TJ = 125 C 100 20 VDS - Volts VDS - Volts VGS = 10V 3.0 I D - Amperes 70 RDS(on) - Normalized 80 6V 60 50 40 5V 30 2.6 I D = 94A 2.2 I D = 47A 1.8 1.4 1.0 20 10 0.6 4V 0 0.2 0 3.8 1 2 3 4 5 7 8 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 47A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature VGS = 10V 3.4 6 100 125 150 125 150 o TJ = 125 C 80 2.6 I D - Amperes RDS(on) - Normalized 3.0 2.2 o TJ = 25 C 1.8 60 40 1.4 20 1.0 0.6 0 0 20 40 60 80 100 120 140 I D - Amperes © 2018 IXYS CORPORATION, All Rights Reserved 160 180 200 220 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFT94N30P3 Fig. 7. Input Admittance 160 o TJ = - 40 C 120 120 o TJ = 125 C 100 o 25 C 100 g f s - Siemens I D - Amperes Fig. 8. Transconductance 140 140 o - 40 C 80 60 o 25 C 80 o 125 C 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 7.5 20 40 60 VGS - Volts 80 100 120 140 160 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 300 VDS = 150V 9 250 I D = 47A 8 I G = 10mA 7 VGS - Volts 200 I S - Amperes IXFQ94N30P3 IXFH94N30P3 150 100 o TJ = 125 C 6 5 4 3 o 2 TJ = 25 C 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 10 20 VSD - Volts 30 40 50 60 70 80 90 100 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 1000 100,000 f = 1 MHz 10,000 Ciss 25μs 100 I D - Amperes Capacitance - PicoFarads RDS(on) Limit 1,000 Coss 100μs 10 100 o TJ = 150 C Crss 1ms o TC = 25 C Single Pulse 10 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFT94N30P3 IXFQ94N30P3 IXFH94N30P3 Fig. 13. Maximum Transient Thermal Impedance 1 Fig. 13. Maximum Transient Thermal Impedance AAAAA 0.2 Z(th)JC - K / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_94N30P3(W8) 6-18-12 IXFT94N30P3 TO-3P Outline TO-268 Outline TO-247 Outline A A2 E IXFQ94N30P3 IXFH94N30P3 0P 0P1 E1 D A A2 A2 Q S + + D1 D 2 L1 D2 0P1 1 3 S + D1 D 4 1 + R + A 0P O + 0K M D B M B E 2 3 4 ixys option L1 C A1 E1 L A1 Terminals: 1 - Gate 3 - Source 2,4 - Drain b b2 c b4 e PINS: 1 - Gate 2, 4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. c b b2 b4 e + J M C AM O PINS: 1 - Gate 2, 4 - Drain 3 - Source Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. 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