IXFT94N30T

Preliminary Technical Information IXFT94N30T IXFH94N30T TrenchTM HiperFETTM Power MOSFETs VDSS ID25 = 300V = 94A ≤ 36mΩ Ω RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-268 (IXFT) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 300 V VGSS Continuous ±20 V VGSM Transient ±30 V D (Tab) ID25 TC = 25°C 94 A IDM TC = 25°C, Pulse Width Limited by TJM 235 A IA EAS TC = 25°C TC = 25°C 47 500 A mJ PD TC = 25°C 890 W dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns -55 to +150 °C TJM +150 °C Tstg -55 to +150 °C TJ TL 1.6mm (0.063in) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C Md Mounting Torque (TO-247) 1.13/10 Nm/lb.in. Weight TO-268 TO-247 4 6 g g TO-247 (IXFH) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features International Standard Packages Avalanche Rated z High Current Handling Capability z Fast Intrinsic Rectifier z Low RDS(on) z z Advantages z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 300 VGS(th) VDS = VGS, ID = 4mA 3.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 z z V 5.0 V ±200 nA 50 μA 2 mA 36 mΩ Applications z z z z z z z © 2011 IXYS CORPORATION, All Rights Reserved Easy to Mount Space Savings High Power Density DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100383A(11/11) IXFT94N30T IXFH94N30T Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 55 VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Qgs 95 S 11.4 nF 917 pF 116 pF 40 ns 14 ns 45 ns 12 ns 190 nC 65 nC 53 nC Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2Ω (External) Qg(on) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd Terminals: 1 - Gate 3 - Source 2,4 - Drain 0.14 °C/W RthJC RthCS TO-268 Outline TO-247 0.21 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr IRM QRM IF = 47A, -di/dt = 100A/μs, VR = 100V, VGS = 0V 94 A 376 A 1.4 V 155 10.6 816 TO-247 Outline ns A nC 1 2 ∅P 3 e Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Terminals: 1 - Gate 3 - Source Dim. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFT94N30T IXFH94N30T Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 100 240 VGS = 10V 7V 90 200 80 160 ID - Amperes ID - Amperes 70 6V 60 50 40 7V 120 6V 80 30 20 40 5V 10 5V 0 0 0 0.5 1 1.5 2 2.5 3 0 3.5 5 10 20 25 VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = 47A Value vs. Junction Temperature 2.8 VGS = 10V 7V 90 VGS = 10V 2.4 70 R DS(on) - Normalized 80 6V 60 50 40 30 5V 20 I D = 94A 2.0 I D = 47A 1.6 1.2 0.8 10 4V 0 0.4 0 1 2 3 4 5 6 -50 7 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 47A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 100 3.4 VGS = 10V 3.0 90 TJ = 125ºC 80 2.6 70 ID - Amperes R DS(on) - Normalized 15 VDS - Volts 100 ID - Amperes VGS = 10V 8V 2.2 1.8 TJ = 25ºC 60 50 40 30 1.4 20 1.0 10 0.6 0 0 40 80 120 160 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 200 240 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFT94N30T IXFH94N30T Fig. 8. Transconductance Fig. 7. Input Admittance 180 180 160 160 TJ = - 40ºC 140 g f s - Siemens 120 ID - Amperes 140 TJ = 125ºC 25ºC - 40ºC 100 80 25ºC 120 100 125ºC 80 60 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 180 200 Fig. 10. Gate Charge 10 300 9 250 VDS = 150V I D = 47A 8 I G = 10mA 7 VGS - Volts 200 IS - Amperes 100 ID - Amperes 150 TJ = 125ºC 100 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 20 40 VSD - Volts 60 80 100 120 140 160 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area @ TC = 25ºC Fig. 11. Capacitance 1000 100,000 RDS(on) Limit f = 1 MHz Capacitance - PicoFarads Ciss 100 IC - Amperes 10,000 Coss 1,000 25µs 100µs 10 1 100 1ms Crss 0.1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VCE - Volts 1000 IXFT94N30T IXFH94N30T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 28 28 RG = 2Ω , VGS = 10V 26 VDS = 150V 24 t r - Nanoseconds 24 t r - Nanoseconds RG = 2Ω , VGS = 10V 26 VDS = 150V 22 I 20 D = 94A 18 I 16 D = 47A 22 18 16 14 14 12 12 10 TJ = 125ºC 20 TJ = 25ºC 10 25 35 45 55 65 75 85 95 105 115 45 125 50 55 60 65 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 180 250 22 90 95 90 I D = 47A 60 50 t f - Nanoseconds 150 80 VDS = 150V 70 18 16 60 I D = 47A, 94A 14 50 12 10 t d ( o f f ) - Nanoseconds 120 t d ( o n ) - Nanoseconds 200 td(off) - - - - RG = 2Ω, VGS = 10V 20 VDS = 150V t r - Nanoseconds 85 90 tf 150 TJ = 125ºC, VGS = 10V I D = 94A 80 24 td(on) - - - - 100 75 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 300 tr 70 ID - Amperes 40 30 8 0 6 0 2 4 6 8 10 12 14 16 25 18 35 45 55 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current td(off) - - - - 100 350 90 300 RG = 2Ω, VGS = 10V 70 16 60 14 50 12 40 TJ = 25ºC 10 30 8 20 45 50 55 60 65 70 105 115 30 125 75 80 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 85 90 95 320 tf td(off) - - - - 280 TJ = 125ºC, VGS = 10V VDS = 150V 250 t f - Nanoseconds t f - Nanoseconds TJ = 125ºC 18 95 240 200 200 I D = 47A 150 160 I D = 94A 100 120 50 80 0 40 2 4 6 8 10 RG - Ohms 12 14 16 18 t d ( o f f ) - Nanoseconds 80 t d ( o f f ) - Nanoseconds VDS = 150V 20 85 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 24 tf 75 TJ - Degrees Centigrade RG - Ohms 22 65 IXFT94N30T IXFH94N30T Fig. 19. Maximum Transient Thermal Impedance Z (th )J C - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_94N30T(8G)9-19-11 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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