IXFT96N20P

PolarHTTM HiPerFET Power MOSFET IXFH 96N20P IXFT 96N20P IXFV 96N20P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 200 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 200 V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25° C 96 A ID(RMS) External lead current limit 75 A IDM TC = 25° C, pulse width limited by TJM 225 A IAR TC = 25° C 60 A EAR TC = 25° C 50 mJ EAS TC = 25° C 1.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD TC = 25° C 600 W -55 ... +175 175 -55 ... +150 °C °C °C 300 260 °C °C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10s Md Mounting torque Weight TO-220 TO-247 TO-268 (TO-247) (TAB) S G G S g g g D (TAB) l 5.0 V l ±100 nA 25 250 µA µA 24 mΩ VGS(th) VDS = VGS, ID = 4 mA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % S D (TAB) D = Drain TAB = Drain Features V 200 D G = Gate S = Source l VGS = 0 V, ID = 250 µA © 2006 IXYS All rights reserved D TO-268 (IXFT) Characteristic Values Min. Typ. Max. BVDSS TJ = 150° C G 1.13/10 Nm/lb.in. 4 6 5 Symbol Test Conditions (TJ = 25° C, unless otherwise specified) TO-247 (IXFH) PLUS220 (IXFV) TJ TJM Tstg TL TSOLD = 200 V = 96 A ≤ 24 mΩ Ω ≤ 200 ns l Fast Intrinsic Diode International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density DS99222E(02/06) IXFH 96N20P IXFT 96N20P IXFV 96N20P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 40 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 52 S 4800 pF 1020 pF 270 pF Crss td(on) 28 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 30 ns td(off) RG = 4 Ω (External) 75 ns 30 ns 145 nC 30 nC 80 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCS TO-247 (IXFH) Outline 1 Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Source-Drain Diode ° C/W 0.21 Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 96 A ISM Repetitive 240 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = 25 A 120 200 ns QRM -di/dt = 100 A/µs 0.7 µC IRM VR = 100 V, VGS = 0 V 7 A 3 Terminals: 1 - Gate 2 - Drain 3 - Source TAB - Drain 0.25° C/W (TO-247) 2 TO-268 (IXFT) Outline PLUS220 (IXFV) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXFH 96N20P IXFT 96N20P IXFV 96N20P Fig. 1. Output Characte ris tics @ 25ºC Fig. 2. Exte nde d Output Characte r is tics @ 25ºC 250 100 V GS = 10V 9V 90 80 200 9V 175 I D - Amperes 70 I D - Amperes V GS = 10V 225 60 8V 50 40 7V 30 20 150 125 8V 100 75 7V 50 6V 10 25 0 6V 0 0 0.5 1 1.5 2 2.5 3 0 2 4 6 V D S - V olts Fig. 3. Output Characte ris tics @ 150ºC 12 14 16 18 20 3 V GS = 10V 9V 90 2.8 R D S ( o n ) - Normalized 70 8V 60 50 7V 40 30 V GS = 10V 2.6 80 I D - Amperes 10 Fig. 4. RDS(on ) Norm alize d to 0.5 ID25 V alue vs . Junction Te m pe ratur e 100 6V 20 2.4 2.2 2 I D = 96A 1.8 1.6 I D = 48A 1.4 1.2 1 10 0.8 5V 0 0.6 0 1 2 3 4 V D S - V olts 5 6 -50 7 -25 4 50 75 100 125 150 175 90 V GS = 10V 3.7 25 Fig. 6. Drain Curre nt vs . Cas e Te m pe rature 0.5 ID25 V alue vs . ID 4.3 0 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to External Lead C urrent Lim it 80 70 3.4 TJ = 175ºC 3.1 2.8 2.5 2.2 TJ = 125ºC 1.9 1.6 I D - Amperes R D S ( o n ) - Normalized 8 V D S - V olts 60 50 40 30 20 1.3 1 TJ = 25ºC 10 0 0.7 0 25 50 75 100 125 150 175 200 225 250 I D - A mperes © 2006 IXYS All rights reserved -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXFH 96N20P IXFT 96N20P IXFV 96N20P Fig. 8. Trans conductance 80 140 70 120 60 - Siemens 160 100 60 TJ = 150ºC 25ºC -40ºC 40 50 40 fs 80 TJ = -40ºC 25ºC 150ºC 30 g I D - Amperes Fig. 7. Input Adm ittance 20 20 10 0 0 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 0 25 50 75 V G S - V olts Fig. 9. Sour ce Cur re nt vs . Sour ce -To-Drain V oltage 125 175 200 10 250 9 V DS = 100V 8 I D = 48A I G = 10m A 7 V G S - Volts 200 150 100 6 5 4 3 TJ = 150ºC 50 2 TJ = 25ºC 1 0 0 0.4 0.6 0.8 1 V S D - V olts 1.2 1.4 1.6 0 15 30 45 Q 60 G 75 90 105 120 135 150 - nanoCoulombs Fig. 12. Forw ar d-Bias Safe Ope rating Ar e a Fig. 11. Capacitance 10000 1000 f = 1MH z TJ = 175ºC R DS(on) Lim it TC = 25ºC C is s I D - Amperes Capacitance - picoFarads 150 Fig. 10. Gate Charge 300 I S - Amperes 100 I D - A mperes 1000 C oss 25µs 100 100µs 1m s 10m s 10 DC C rss 100 1 0 5 10 15 20 25 V DS - V olts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - V olts 1000 IXFH 96N20P IXFT 96N20P IXFV 96N20P Fig. 13. M axim um Trans ie nt The rm al Re s is tance R( t h ) J C - ºC / W 1.00 0.10 0.01 1 10 100 Pulse Width - Milliseconds © 2006 IXYS All rights reserved 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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