IXFV110N10P

PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 110N10P IXFV 110N10P IXFV 110N10PS VDSS = 100 V ID25 = 110 A Ω RDS(on) ≤ 15 mΩ ≤ 150 ns trr Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C 100 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 100 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 ID(RMS) IDM TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM 110 75 250 A A A IAR TC = 25° C 60 A EAR TC = 25° C 40 mJ EAS TC = 25° C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD TC = 25° C 480 W -55 ... +175 175 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque (TO-247) FC Mounting Force (PLUS220) Weight TO-247 PLUS220 Symbol Test Conditions (TJ = 25° C, unless otherwise specified) 11..65 / 2.5..15 N/lb 6 4 g g BVDSS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 4 mA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved G D (TAB) S PLUS220 (IXFV) G D D (TAB) S PLUS220SMD (IXFV...S) G S D (TAB) 1.13/10 Nm/lb.in. Characteristic Values Min. Typ. Max. TJ = 150° C TO-247 (IXFH) V 5.0 V ±100 nA 25 250 µA µA 15 mΩ G = Gate S = Source D = Drain TAB = Drain Features l Fast intrinsic diode l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages Easy to mount l Space savings l High power density l DS99212E(01/06) IXFH 110N10P IXFV110N10P IXFV 110N10PS Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 30 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 40 S 3550 pF 1370 pF 440 pF Crss td(on) 21 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A 25 ns td(off) RG = 4 Ω (External) 65 ns 25 ns 110 nC 25 nC 62 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCS TO-247 (IXFH) Outline 1 Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC ° C/W 0.21 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 110 A ISM Repetitive 250 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr QRM IF = 25 A, -di/dt = 100 A/µs VR = 50 V, VGS = 0 V 0.6 3 Terminals: 1 - Gate 2 - Drain 3 - Source TAB - Drain 0.31° C/W (TO-247) 2 PLUS220 (IXFV) Outline 150 ns µC PLUS220SMD (IXFV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 IXFH 110N10P IXFV110N10P IXFV 110N10PS Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 220 110 VGS = 10V 9V 100 90 180 9V 160 70 I D - Amperes 80 I D - Amperes VGS = 10V 200 8V 60 50 40 7V 140 120 8V 100 80 7V 60 30 20 40 6V 10 0 0 0.2 0.4 0.6 0.8 1 1.2 6V 20 5V 0 1.4 1.6 1.8 0 2 1 2 3 Fig. 3. Output Characteristics @ 150ºC 6 7 8 9 10 2.4 VGS = 10V 9V 100 VGS = 10V 2.2 R D S ( o n ) - Normalized 90 80 I D - Amperes 5 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 110 8V 70 60 7V 50 40 30 6V 20 2 1.8 I D = 110A 1.6 1.4 I D = 55A 1.2 1 0.8 5V 10 0.6 0 0 0.5 1 1.5 2 2.5 V D S - Volts 3 3.5 -50 4 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current Fig. 6. Drain Current vs. Case Tem perature 80 3 2.8 70 2.6 TJ = 175ºC 2.4 2.2 2 1.8 VGS = 10V 1.6 1.4 VGS = 15V 1.2 TJ = 25ºC 1 External Lead Current Limit 60 I D - Amperes R D S ( o n ) - Normalized 4 V D S - Volts V D S - Volts 50 40 30 20 10 0.8 0 0.6 0 25 50 75 100 125 150 175 200 225 250 I D - Amperes © 2006 IXYS All rights reserved -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXFH 110N10P IXFV110N10P IXFV 110N10PS Fig. 8. Transconductance Fig. 7. Input Adm ittance 70 225 TJ = -40ºC 200 25ºC 60 150ºC 175 50 g f s - Siemens I D - Amperes 250 150 125 100 75 TJ = -40ºC 40 25ºC 150ºC 30 20 50 10 25 0 0 4 5 6 7 8 9 10 11 0 50 100 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 200 250 300 100 120 Fig. 10. Gate Charge 10 350 VDS = 50V 9 300 I D = 55A 8 250 I G = 10mA 7 VG S - Volts I S - Amperes 150 I D - Amperes 200 150 6 5 4 3 100 TJ = 150ºC 2 50 TJ = 25ºC 1 0 0 0.4 0.6 0.8 1 1.2 1.4 V S D - Volts 1.6 1.8 0 2 20 40 60 80 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 10000 1000 R DS(on) Limit C iss I D - Amperes Capacitance - picoFarads TJ = 175ºC TC = 25ºC 1000 C oss 25µs 100µs 100 1ms 10ms C rss f = 1MHz DC 100 10 0 5 10 15 20 25 V DS - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 V D S - Volts 100 1000 IXFH 110N10P IXFV110N10P IXFV 110N10PS F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e R( t h ) J C - ºC / W 1.00 0.10 0.01 0.1 1 10 Pu ls e W id th - m illis e c o n d s © 2006 IXYS All rights reserved 100 1000 Disclaimer Notice - Information furnished is believed to be accurate and reliable. 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