IXFV26N60P

PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A Ω RDS(on) ≤ 270 mΩ ≤ 200 ns trr IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 26 A IDM TC = 25°C, pulse width limited by TJM 65 A IAR TC = 25°C 13 A EAR TC = 25°C 40 mJ EAS TC = 25°C 1.2 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150°C, RG = 5 Ω 10 V/ns PD Maximum Ratings TJ TJM Tstg 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque (TO-3P&TO-247) FC Mounting force (PLUS220) Weight TO-247 TO-268 PLUS220 & PLUS220SMD G 460 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C G 11..65/2.5..15 N/lb 6.0 5.0 4.0 g g g BVDSS VGS = 0 V, ID = 250 μA 600 VGS(th) VDS = VGS, ID = 4 mA 2.5 IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved S D (TAB) G D D (TAB) S PLUS220SMD (IXFV...S) 1.13/10 Nm/lb.in. Characteristic Values Min. Typ. Max. TJ = 125°C S TO-268 (IXFT) G S G = Gate S = Source Symbol Test Conditions (TJ = 25°C, unless otherwise specified) D PLUS220 (IXFV) TC = 25°C TL TSOLD TO-247 (IXFH) V 5.0 V ±100 nA 25 250 μA μA 270 mΩ D (TAB) D = Drain TAB = Drain Features z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density DS99435E(12/06) IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 0.5 ID25, pulse test 16 26 S 4150 pF 400 pF Crss 27 pF td(on) 25 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 ID25 27 ns td(off) RG = 5 Ω (External) 75 ns tf 21 ns Qg(on) 72 nC 27 nC 24 nC VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgs Qgd 0.27 °C/W RthJC RthCs (PLUS220 & TO-247) °C/W 0.21 Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 26 A ISM Repetitive 78 A VSD IF = IS, VGS = 0 V, pulse test 1.5 V trr IF = 25A, -di/dt = 100 A/μs 200 ns IRM VR = 100V; VGS = 0 V 150 QRM 7 A 0.7 μC Characteristic Curves Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 60 VGS = 10V 24 VGS = 10V 54 7V 7V 48 20 I D - Amperes I D - Amperes 42 16 6V 12 8 6V 36 30 24 18 12 4 5V 6 5V 0 0 0 1 2 3 4 5 6 7 0 3 6 V D S - Volts 9 12 15 18 21 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 24 27 30 IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS Fig. 3. Output Characteristics Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature @ 125ºC 3.2 24 VGS = 10V R D S ( o n ) - Normalized I D - Amperes 20 16 VGS = 10V 2.8 7V 6V 12 8 2.4 2 I D = 26A 1.6 I D = 13A 1.2 5V 4 0.8 0 0.4 0 2 4 6 8 10 12 14 -50 16 -25 0 V D S - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID 30 3.2 VGS = 10V 27 TJ = 125º C 2.8 R D S ( o n ) - Normalized 25 24 21 I D - Amperes 2.4 2 1.6 18 15 12 9 6 TJ = 25º C 1.2 3 0 0.8 0 10 20 30 40 50 -50 60 -25 0 I D - Amperes 50 45 45 40 40 35 35 g f s - Siemens I D - Amperes 50 30 25 TJ = 125º C 25º C 15 50 75 100 125 150 Fig. 8. Transconductance Fig. 7. Input Adm ittance 20 25 TC - Degrees Centigrade -40º C TJ = -40º C 25º C 125º C 30 25 20 15 10 10 5 5 0 0 4 4.5 5 5.5 6 V G S - Volts © 2006 IXYS All rights reserved 6.5 7 7.5 0 5 10 15 20 25 30 I D - Amperes 35 40 45 50 IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS Fig. 9. Source Current vs. Source-To-Drain Voltage Fig. 10. Gate Charge 10 80 70 9 VDS = 300V 8 I D = 13A 7 I G = 10mA 50 VG S - Volts I S - Amperes 60 40 30 TJ = 125º C 6 5 4 3 20 TJ = 25º C 2 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 10 20 V S D - Volts 30 40 50 60 Q G - nanoCoulombs Fig. 11. Capacitance 10000 Capacitance - picoFarads f = 1MHz C iss 1000 C oss 100 C rss 10 0 5 10 15 20 25 30 35 40 V D S - Volts Fig. 12. Maxim um Transient Therm al Resistance R ( t h ) J C - ºC / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 70 80 IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS TO-247 AD (IXFH) Outline 1 Dim. 2 3 Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC PLUS220SMD (IXFV_S) Outline © 2006 IXYS All rights reserved TO-268 (IXFT) Outline PLUS220 (IXFV) Outline Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.